Infineon Technologies Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF640N	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	247 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.15 ohm	18 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-220AB	e0	30	225
IRF6636TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	140 A	28 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON					.0045 ohm	18 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified				40	260
IRF6717MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	290 mJ	220 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.00125 ohm	38 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
IRF6726MTR1PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	250 A	260 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON					.0017 ohm	32 A	BOTTOM	R-XBCC-N3	1	DRAIN
IRF7307QTRPBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	21 A		5.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.05 ohm	5.2 A	DUAL	R-PDSO-G8				AVALANCHE RATED, ULTRA-LOW RESISTANCE	MS-012AA		NOT SPECIFIED	NOT SPECIFIED
IRF7311TRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	26 A	100 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.029 ohm	6.6 A	DUAL	R-PDSO-G8	1			AVALANCHE RATED, ULTRA-LOW RESISTANCE	MS-012AA	e3	30	260
IRF7319TR	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	82 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.029 ohm	6.5 A	DUAL	R-PDSO-G8	2		Not Qualified	AVALANCHE RATED	MS-012AA	e3
IRF9530NS	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	250 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.2 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
IRF9Z24NPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	96 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.175 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IRFB3004PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1310 A	300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.00175 ohm	195 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
IRFB3307ZPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	140 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0058 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IRFH5104TR2PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	114 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	120 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.0035 ohm	24 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
IRFH6200TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	780 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0015 ohm	45 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
IRFI540NPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	300 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.052 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-220AB	e3	40	260
IRFN054	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	256 A	480 mJ	45 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.031 ohm	55 A	DUAL	R-CDSO-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0
IRFR12N25DTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	144 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	250 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.26 ohm	14 A	SINGLE	R-PSSO-G2		DRAIN			TO-252AA				22 pF
IRFR4105ZTRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	29 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.0245 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
IRFS3006-7PPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1172 A	303 mJ	293 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0021 ohm	240 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified		TO-263	e3	30	260
IRL540NS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	310 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.053 ohm	36 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, FAST SWITCHING		e0	30	225
IRLB8314PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	664 A	180 mJ	171 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0032 ohm	130 A	SINGLE	R-PSFM-T3					TO-220AB		NOT SPECIFIED	NOT SPECIFIED	500 pF
IRLL3303PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	37 A	140 mJ	6.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.031 ohm	4.6 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		TO-261AA	e3	30	260	170 pF
IRLR024N	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	68 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	38 W	175 Cel	SILICON				TIN LEAD	.08 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e0	30	240
IRLR7821	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A	230 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin/Lead (Sn/Pb)	.01 ohm	65 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e0	30	240
IRLR7821TRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	230 mJ	65 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.01 ohm	65 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260
IRLR8103VPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	363 A		91 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.0105 ohm	91 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260	109 pF
JANS2N6851	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	METAL	SWITCHING	200 V	WIRE	ROUND	ENHANCEMENT MODE	1	16 A	75 mJ	4 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.68 ohm	4 A	BOTTOM	O-MBCY-W3			Qualified		TO-205AF	e0				MIL-19500/564
JANSF2N7425	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	UNSPECIFIED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.075 ohm	35 A	SINGLE	S-XSFM-P3		ISOLATED	Qualified	HIGH RELIABILITY	TO-254AA	e0				MIL-19500/660
JANSF2N7426	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	108 A	500 mJ	23 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.16 ohm	27 A	SINGLE	S-CSFM-P3			Qualified		TO-254AA	e0				MIL-19500/660
JANSF2N7433U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	172 A	500 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.077 ohm	43 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified			e0				MIL-19500/664
JANSF2N7503U8	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	27.6 A	24 mJ	6.9 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	14.6 ns	-55 Cel	49 ns		.22 ohm	6.9 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED		MIL-19500/743
JANSR2N7434	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3 W	METAL	SWITCHING	250 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	124 A	500 mJ	31 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.123 ohm	31 A	SINGLE	S-MSFM-P3			Qualified		TO-254AA	e0
JANSR2N7473U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	214 A	380 mJ	53.5 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.038 ohm	53.5 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0
JANSR2N7474U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A	222 mJ	45 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.06 ohm	45 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified			e0				MIL-19500/684
JANSR2N7476T1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	SQUARE	ENHANCEMENT MODE	1	180 A	256 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.044 ohm	45 A	SINGLE	S-PSFM-T3		ISOLATED	Qualified		TO-254AA	e0
JANSR2N7477T1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	SQUARE	ENHANCEMENT MODE	1	148 A	258 mJ	40.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.061 ohm	37 A	SINGLE	S-PSFM-T3		ISOLATED	Qualified		TO-254AA	e0
JANSR2N7555U3	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							10 A
JANTX2N6794	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	METAL	SWITCHING	500 V	WIRE	ROUND	ENHANCEMENT MODE	1	6 A	.242 mJ	1.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	3.1 ohm	1.5 A	BOTTOM	O-MBCY-W3			Qualified	AVALANCHE RATED	TO-205AF	e0				MIL-19500/555
JANTXV2N6782U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	15 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	14 A	7 mJ	3.5 A	15	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.69 ohm	3.5 A	QUAD	R-CQCC-N15		SOURCE	Qualified			e0				MIL-19500/556
MQ_AUIRF7309QTR	Infineon Technologies
SPA07N60CFD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	17 A	230 mJ	6.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.7 ohm	6.6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
SPP06N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	74 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18.6 A	200 mJ	6.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.75 ohm	6.2 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
SPP20N65C3XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	62.1 A	690 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.19 ohm	20.7 A	SINGLE	R-PSFM-T3				AVALANCHE RATED	TO-220AB	e3
SPW15N60CFDXK	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	460 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.33 ohm	13.4 A	SINGLE	R-PSFM-T3					TO-247AD
BSC080N03MSGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	212 A	15 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0102 ohm	13 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3
BSO080P03SHXUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.79 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	248 mJ	12.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.008 ohm	12.6 A	DUAL	R-PDSO-G8	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
BSP324E6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.68 A		.17 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	13.5 ns	-55 Cel	127 ns	MATTE TIN	25 ohm	.17 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260	5.7 pF
BSP324L6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.68 A		.17 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	13.5 ns	-55 Cel	127 ns	Matte Tin (Sn)	25 ohm	.17 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260	5.7 pF	AEC-Q101
IAUZ30N06S5L140ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	85 A	27 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0196 ohm	30 A	DUAL	S-PDSO-N8	1	DRAIN				e3			15 pF	AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.