Infineon Technologies Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRFU5305PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	69 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	280 mJ	25 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.065 ohm	31 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-251AA	e3	30	260
IRL2505STRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN OVER NICKEL	.01 ohm	104 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY	TO-263AB	e3	30	260
IRL540NLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	310 mJ	36 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.053 ohm	36 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-262AA	e3	30	260
IRLMS1902TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.1 ohm	3.2 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260
IRLR7843TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	620 A	1440 mJ	161 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.0033 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRLR7843TRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	620 A	1440 mJ	161 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.0033 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
JANSF2N7480U3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	100 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.03 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified			e0				MIL-19500/703
JANSR2N7484T3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		UNSPECIFIED	SWITCHING	100 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	72 A	87 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.07 ohm	18 A	SINGLE	R-XSFM-P3		ISOLATED	Qualified	RADIATION HARDENED	TO-257AA	e0
JANSR2N7519U3	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	152 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	120 ns		.07 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified							MIL-19500; RH - 100K Rad(Si)
JANTX2N6758	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	200 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	36 A	54 mJ	9 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.49 ohm	9 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/542
JANTXV2N6758	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	200 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	36 A	54 mJ	9 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.49 ohm	9 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	AVALANCHE RATED	TO-204AA	e0				MIL-19500/542
JANTXV2N6768	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	400 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	56 A	11.3 mJ	14 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.4 ohm	14 A	BOTTOM	O-MBFM-P2		DRAIN	Qualified	HIGH RELIABILITY	TO-204	e0				MIL-19500/543
SPD06N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18.6 A	200 mJ	6.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.75 ohm	6.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	HIGH VOLTAGE	TO-252AA	e3		260
SPD28N05L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	112 A	140 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.044 ohm	28 A	SINGLE	R-PSSO-G2			Not Qualified	LOGIC LEVEL COMPATIBLE		e0
SPI15N60C3XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	460 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.28 ohm	15 A	SINGLE	R-PSIP-T3				AVALANCHE RATED	TO-262AA
SPP15N60C3HKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	460 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.28 ohm	15 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
SPP15N60CFDXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	460 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON					.33 ohm	13.4 A	SINGLE	R-PSFM-T3					TO-220AB		NOT SPECIFIED	NOT SPECIFIED
SPW35N60CFDFKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	85 A	1300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.118 ohm	34.1 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-247AA	e3
AUIRF1405	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	330 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	680 A	560 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0053 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
AUIRF1405ZL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	270 mJ	150 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.0049 ohm	150 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY	TO-262AA	e3	30	260
AUIRF7737L2TR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	UNSPECIFIED	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	624 A	386 mJ	315 A	7	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0019 ohm	31 A	BOTTOM	R-XBCC-N7	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	40	260
AUIRFI3205	Infineon Technologies	N-CHANNEL	SINGLE	NO	63 W							1			64 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							64 A
AUIRFIZ44N	Infineon Technologies	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			31 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							31 A
AUIRFR120Z	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	20 mJ	8.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.19 ohm	8.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE	TO-252AA
BF2030W-E6814	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W						DUAL GATE, ENHANCEMENT MODE	1			.04 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.04 A			1							260
BSC034N03LSGXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	55 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0051 ohm	22 A	DUAL	R-PDSO-N8		DRAIN		LOGIC LEVEL COMPATIBLE, AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED
BSC0909NSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	176 A	10 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0091 ohm	12 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3
BSC100N10NSFGXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	360 A	377 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.01 ohm	11.4 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED
BSL307SP	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	44 mJ	5.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.043 ohm	5.5 A	DUAL	R-PDSO-G6	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3
BSL307SPL6327HTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	44 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.043 ohm	5.5 A	DUAL	R-PDSO-G6			Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED
BSP299H6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.6 A	130 mJ	.4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	4 ohm	.4 A	DUAL	R-PDSO-G4		DRAIN		AVALANCHE RATED		e3				AEC-Q101
BSP321PL6327	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.9 A	57 mJ	.98 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.9 ohm	.98 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	AVALANCHE RATED		e3		260
BSP89E6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A		.35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	6 ohm	.35 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
BSP92PL6327HTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.04 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					12 ohm	.26 A	DUAL	R-PDSO-G4		DRAIN								AEC-Q101
BSZ130N03MSGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	140 A	9 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.015 ohm	9 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3
FF8MR12W2M1B11BOMA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		UNSPECIFIED	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	300 A			35	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON CARBIDE		-40 Cel					UPPER	R-XUFM-X35		ISOLATED					NOT SPECIFIED	NOT SPECIFIED
IMW120R020M1HXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	213 A	721 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-55 Cel			.03 ohm	98 A	SINGLE	R-PSFM-T3					TO-247				23 pF
IPA040N06NXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	276 A	77 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.004 ohm	69 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
IPA060N06NXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	60 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.006 ohm	45 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
IPA320N20NM3SXKSA1	Infineon Technologies																								Tin (Sn)										e3	NOT SPECIFIED	NOT SPECIFIED
IPA60R060C7XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	135 A	159 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.06 ohm	16 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
IPA60R099C7XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	83 A	97 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.099 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
IPA60R1K0CEXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	46 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON		-40 Cel		TIN	1 ohm		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
IPA80R460CE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	470 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.46 ohm	10.8 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
IPA80R460CEXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	470 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON					.46 ohm	10.8 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB
IPA90R340C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	678 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.34 ohm	15 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
IPAW70R600CEXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	28 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	55 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-40 Cel		TIN	.6 ohm	10.5 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
IPB014N06N	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	420 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.0014 ohm	34 A	SINGLE	R-PSSO-G6	1	DRAIN			TO-263	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.