Infineon Technologies Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IPW60R060C7XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	135 A	159 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.06 ohm	35 A	SINGLE	R-PSFM-T3		DRAIN			TO-247	e3
IPW60R090CFD7XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	97 A	114 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.09 ohm	25 A	SINGLE	R-PSFM-T3					TO-247	e3
IPW65R150CFD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	195.3 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	614 mJ	22.4 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.15 ohm	22.4 A	SINGLE	R-PSFM-T3					TO-247	e3
IPW65R190CFDFKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	151 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	57.2 A	484 mJ	17.5 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Tin (Sn)	.19 ohm	17.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3	NOT SPECIFIED	NOT SPECIFIED
IPW80R280P7XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	43 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		TIN	.28 ohm		SINGLE	R-PSFM-T3		DRAIN			TO-247	e3
IRF1405ZSPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	230 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	600 A	420 mJ	150 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0049 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
IRF3205STRL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	390 A	264 mJ	110 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	115 ns	-55 Cel	115 ns		.008 ohm	110 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	TO-263AB				211 pF
IRF3708PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	87 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	248 A	213 mJ	62 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.012 ohm	62 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	52 pF
IRF4905S	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A	930 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 W	175 Cel	SILICON		-55 Cel		TIN LEAD	.02 ohm	64 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e0	30	225
IRF6644TR1PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED		100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	228 A	86 mJ	10 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	2.8 W	150 Cel	SILICON		-40 Cel			.013 ohm	10 A	BOTTOM	R-XBCC-N3		DRAIN		LOW CONDUCTION LOSS
IRF7103QTRPBF	Infineon Technologies	N-CHANNEL		YES	2.4 W						ENHANCEMENT MODE				3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							3 A
IRF7304QPBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	17 A		4.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN OVER NICKEL	.09 ohm	4.3 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	MS-012AA	e3
IRF7389TR	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	82 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.029 ohm	7.3 A	DUAL	R-PDSO-G8	2		Not Qualified	HIGH RELIABILITY, AVALANCHE RATED	MS-012AA	e3
IRF7470PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	85 A	300 mJ	10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.013 ohm	10 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED	MS-012AA	e3	30	260
IRF7580MTRPBF	Infineon Technologies																														3
IRF7NJZ44V	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	66 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0165 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRF7NJZ44VSCV	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	66 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON					.0165 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN
IRF7NJZ44VSCX	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	66 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON					.0165 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN
IRF7YSZ44VCM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	METAL	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	80 A	71 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0195 ohm	20 A	SINGLE	R-MSFM-P3			Not Qualified		TO-257AA	e0
IRF7YSZ44VCMSCX	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		METAL	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	80 A	71 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON					.0195 ohm	20 A	SINGLE	R-MSFM-P3					TO-257AA
IRF8915TRPBF	Infineon Technologies	N-CHANNEL		YES	2 W										8.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							8.9 A			1
IRF9230	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	METAL	SWITCHING	200 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	28 A	66 mJ	6.5 A	2	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.92 ohm	6.5 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AA	e0
IRFB23N15DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	92 A	260 mJ	23 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.09 ohm	23 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IRFB59N10DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	236 A	510 mJ	59 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.025 ohm	59 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
IRFE110	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	11 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	14 A	7 mJ	3.1 A	15	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.69 ohm	3.5 A	QUAD	R-CQCC-N15		SOURCE	Not Qualified	HIGH RELIABILITY		e0
IRFH5025TR2PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	8.3 W	PLASTIC/EPOXY	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	46 A	320 mJ	32 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.1 ohm	3.8 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3
IRFH5302TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	130 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0035 ohm	32 A	DUAL	R-PDSO-N5	1	DRAIN
IRFH7110TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	240 A	110 mJ	50 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0135 ohm	11 A	DUAL	R-PDSO-F5	1	DRAIN
IRFH7185TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	260 A	360 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.0052 ohm	19 A	DUAL	R-PDSO-N5	1	DRAIN
IRFH7932TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.4 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	192 A	14 mJ	25 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0033 ohm	24 A	DUAL	R-PDSO-N3	2	DRAIN	Not Qualified			e3	30	260
IRFI3205PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	390 A	480 mJ	56 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.008 ohm	64 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IRFP4410ZPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	390 A	242 mJ	97 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.009 ohm	97 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC	e3
IRFR3411TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	130 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	185 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.044 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
IRFR5305	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	280 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.065 ohm	31 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	HIGH RELIABILITY	TO-252AA	e0	30	240
IRFR540ZTRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	91 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	39 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0285 ohm	35 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED, ULTRA-LOW RESISTANCE	TO-252AA				100 pF
IRFS31N20D	Infineon Technologies	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	124 A	420 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.082 ohm	31 A	SINGLE	R-PSSO-G2	1	DRAIN
IRFS4115-7PPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	380 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	420 A	230 mJ	105 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0118 ohm	105 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified		TO-263CB	e3
IRFS4410TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	380 A	220 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN OVER NICKEL	.01 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
IRFS59N10DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	236 A	510 mJ	59 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.025 ohm	59 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
IRFS7437TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	230 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1000 A	802 mJ	195 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0018 ohm	195 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB
IRFS7534TRL7PP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	290 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	790 A	773 mJ	240 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	1.95 ohm	240 A	SINGLE	R-PSSO-G6	1	DRAIN			TO-263CB	e3	30	260
IRFZ48VPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	290 A	166 mJ	72 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN OVER NICKEL	.012 ohm	72 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-220AB	e3
IRHE7110	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	15 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	14 A	68 mJ	3.5 A	18	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	45 ns	-55 Cel	80 ns	TIN LEAD	.69 ohm	3.5 A	QUAD	R-CQCC-N18		SOURCE	Not Qualified	HIGH RELIABILITY		e0				RH - 100K Rad(Si)
IRHLNJ797034	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	79 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	282 ns	-55 Cel	202 ns	TIN LEAD	.072 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 100K Rad(Si)
IRHLNJ797034B	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	79 mJ	22 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	282 ns	-55 Cel	202 ns		.072 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN					NOT SPECIFIED	NOT SPECIFIED		RH - 100K Rad(Si)
IRHLNJ797034SCSA	Infineon Technologies
IRHNA57260SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	214 A	380 mJ	55 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.038 ohm	53.5 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0
IRHNA67164	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	283 mJ	56 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.018 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 100K Rad(Si)

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.