Infineon Technologies Power Field Effect Transistors (FET) 2,400+

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRHNA67264	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	283 mJ	50 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns	TIN LEAD	.018 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0				RH - 100K Rad(Si)
IRHNJ57130	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	70 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	65 ns	TIN LEAD	.06 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0			50 pF
IRHNJ57234SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	40 A	58 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.4 ohm	10 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e0
IRHNJ593130	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	50 A	96 mJ	12.5 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.205 ohm	12.5 A	BOTTOM	R-PBCC-N3		DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e0
IRHNJ597230	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	32 A	75 mJ	8 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.505 ohm	8 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0				RH - 100K Rad(Si)
IRHNJ63134	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	76 A	60 mJ	19 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.088 ohm	19 A	BOTTOM	R-CBCC-N3			Not Qualified			e0
IRHNJ63230	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	76 A	60 mJ	16 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.13 ohm	19 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ67230	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	76 A	60 mJ	16 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.13 ohm	19 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHNJ67230A	Infineon Technologies
IRHNJ67230B	Infineon Technologies
IRHNJ67230SCSA	Infineon Technologies
IRHNJ67230SCV	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	76 A	60 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		SILICON					.13 ohm	19 A	BOTTOM	R-CBCC-N3		DRAIN
IRHNJ67434	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			3.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							3.4 A
IRHNM597110	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	12.4 A	28 mJ	3.1 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.2 ohm	3.1 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRLB3813PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1050 A	520 mJ	260 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.00195 ohm	260 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	650 pF
IRLI2910PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	190 A	520 mJ	27 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.03 ohm	31 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IRLL024ZPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.8 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	21 mJ	5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.1 ohm	5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		TO-261AA	e3	30	260	36 pF
IRLMS1503TRPBF-1	Infineon Technologies																													1
IRLMS6702TR	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.2 ohm	2.3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3
IRLP3034PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1308 A	224 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON					.0017 ohm	195 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC		NOT SPECIFIED	NOT SPECIFIED
IRLR2905TRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	210 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.03 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260
IRLR3103TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	220 A	240 mJ	55 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.019 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-252AA	e3	30	260
IRLU7843PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	620 A	1440 mJ	161 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.0033 ohm	30 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260
IRLZ34NLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	68 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	110 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.046 ohm	30 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED	TO-262AA	e3	30	260
IRLZ34NSPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	68 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	110 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.046 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED	TO-263AB	e3	30	260
IRLZ44NLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	210 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.025 ohm	47 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY	TO-262AA	e3
JANSF2N7591U3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	76 A	60 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		SILICON					.13 ohm	19 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified
JANSG2N7469U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	363 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.012 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified			e0				MIL-19500/673
JANSR2N7469U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	363 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.012 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED						MIL-19500/673
JANSR2N7486U3	Infineon Technologies	N-CHANNEL	SINGLE	YES	75 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	48 A	60 mJ	12 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	125 ns	-55 Cel	65 ns	TIN LEAD	.22 ohm	12 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0			11 pF	MIL-19500
JANTX2N6788	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	24 A	.242 mJ	6 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.35 ohm	6 A	BOTTOM	O-MBCY-W3			Qualified	AVALANCHE RATED	TO-205AF	e0				MIL-19500/555
JANTX2N7227	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	400 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	56 A	700 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.415 ohm	14 A	SINGLE	S-MSFM-P3		ISOLATED	Qualified	HIGH RELIABILITY	TO-254AA	e0				MIL-19500/592
JANTXV2N7227	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	METAL	SWITCHING	400 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	56 A	700 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.415 ohm	14 A	SINGLE	S-MSFM-P3		ISOLATED	Qualified	HIGH RELIABILITY	TO-254AA	e0				MIL-19500/592
SI4410DYTR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0135 ohm	10 A	DUAL	R-PDSO-G8	2		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
SPA06N60C3XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18.6 A	200 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.75 ohm	6.2 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3
SPA11N65C3XK	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	340 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.38 ohm	11 A	SINGLE	R-PSFM-T3		ISOLATED		AVALANCHE RATED	TO-220AB
SPA16N50C3XK	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	460 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.28 ohm	16 A	SINGLE	R-PSFM-T3		ISOLATED		AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
SPA16N50C3XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	460 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.28 ohm	16 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3
SPB21N50C3-E3045A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	63 A	690 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.19 ohm	21 A	SINGLE	R-PSSO-G2				AVALANCHE RATED, HIGH VOLTAGE	TO-263AB
SPD02N50C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY		500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5.4 A	50 mJ	1.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	3 ohm	1.8 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3		260
SPP15N60CFDXK	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	460 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON					.33 ohm	13.4 A	SINGLE	R-PSFM-T3					TO-220AB		NOT SPECIFIED	NOT SPECIFIED
SPW15N60C3XK	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	460 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.28 ohm	15 A	SINGLE	R-PSFM-T3				AVALANCHE RATED	TO-247AD		NOT SPECIFIED	NOT SPECIFIED
SPW15N60CFD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	460 mJ	13.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.33 ohm	13.4 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED
SPW47N60CFDXK	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	115 A	1800 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.083 ohm	46 A	SINGLE	R-PSFM-T3				AVALANCHE RATED, HIGH VOLTAGE	TO-247AA		NOT SPECIFIED	NOT SPECIFIED
AUIRF1010EZS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	340 A	180 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.0085 ohm	75 A	DUAL	R-PDSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3	30	260
AUIRF1324S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1420 A	270 mJ	195 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.00165 ohm	195 A	SINGLE	R-PSSO-G2	1		Not Qualified	ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
AUIRF1404ZL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	710 A	480 mJ	160 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0037 ohm	160 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-262AA
AUIRF1405ZS-7P	Infineon Technologies																													1

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.