Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BCP56-10TX	Nexperia	NPN	SINGLE	YES	155 MHz		1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE			63	150 Cel		SILICON	80 V		-55 Cel		TIN	DUAL	R-PDSO-G4	1	COLLECTOR				e3	30	260	AEC-Q101; IEC-60134
PMBT2222AYSX	Nexperia	NPN	SEPARATE, 2 ELEMENTS	YES	300 MHz		.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE			75	150 Cel		SILICON	40 V	35 ns	-55 Cel	250 ns	TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101; IEC-60134
DTC114EET1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1		e3	40	260
BC548BU	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	30 V				Tin (Sn)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
NSVMMBT2907AM3T5G	Onsemi	PNP	SINGLE	YES	200 MHz	.64 W	.6 A	PLASTIC/EPOXY	AMPLIFIER	1.6 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE			50	150 Cel	8 pF	SILICON	60 V	45 ns	-55 Cel	100 ns	MATTE TIN	DUAL	R-PDSO-F3	1					e3	30	260	AEC-Q101
ZTX651M1TC	Diodes Incorporated	NPN	SINGLE	YES	140 MHz		2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			40			SILICON	60 V					SINGLE	R-PSSO-G3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	CECC
NSVMMBT3906TT1G	Onsemi	PNP	SINGLE	YES	250 MHz		.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30			SILICON	40 V	70 ns		300 ns	MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260
ULQ2003ADR	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC	e4	NOT SPECIFIED	260
ZTX651M1	Diodes Incorporated	NPN	SINGLE	YES	175 MHz		2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			40			SILICON	60 V					SINGLE	R-PSSO-G3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	CECC
BCM847BS,115	NXP Semiconductors	NPN	SEPARATE, 2 ELEMENTS	YES	250 MHz	.3 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G6	1	ISOLATED	Not Qualified			e3	30	260
JANSR2N2907AUB	Microchip Technology	PNP	SINGLE	YES			.6 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		NO LEAD	RECTANGULAR	1	3	SMALL OUTLINE			50	200 Cel		SILICON	60 V	45 ns		300 ns	TIN LEAD	DUAL	R-CDSO-N3			Qualified			e0			MIL-19500/291
BC847BS	Onsemi	NPN	SINGLE	YES	100 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
BC847BWT1G	Onsemi	NPN	SINGLE	YES	100 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC847BS-QF	Nexperia	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.4 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE		.4 W	200	150 Cel		SILICON	45 V		-65 Cel		TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101; IEC-60134
MMBT3904-TP-HF	Micro Commercial Components	NPN	SINGLE	YES	300 MHz		.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30			SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-G3	1					e3	10	260
PMBT2222A	NXP Semiconductors	NPN	SINGLE	YES	300 MHz	.25 W	.6 A	PLASTIC/EPOXY	SWITCHING	1 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel	8 pF	SILICON	40 V	35 ns	-65 Cel	250 ns	Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified	HIGH CURRENT DRIVER	TO-236AB	e3	30	260	AEC-Q101; IEC-60134
PMBT3906,215	NXP Semiconductors	PNP	SINGLE	YES	250 MHz	.3 W	.2 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel	4.5 pF	SILICON	40 V	65 ns		300 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT4401WT1G	Onsemi	NPN	SINGLE	YES	250 MHz	.15 W	.6 A	PLASTIC/EPOXY	SWITCHING	.75 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	.15 W	40	150 Cel	6.5 pF	SILICON	40 V	35 ns	-55 Cel	255 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
JANTX2N2222AUBP/TR	Microsemi
BC548-C	Infineon Technologies	NPN	SINGLE	NO	200 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		420	150 Cel		SILICON						BOTTOM	O-PBCY-T3			Not Qualified
BC857-C	Infineon Technologies	PNP	SINGLE	YES	250 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			420			SILICON	45 V				TIN	DUAL	R-PDSO-G3	1			LOW NOISE		e3
SBCW66GLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.8 A						1			Other Transistors		160	150 Cel							MATTE TIN			1					e3	30	260
LBC847CDW1T1G	Leshan Radio	NPN		YES	100 MHz	.38 W	.1 A									Other Transistors		420	150 Cel
SBC817-25LT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC548BTA	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	30 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC548BT&A	Continental Device India	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	30 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC846BW,135	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	3 pF	SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
JAN2N2222A	Texas Instruments	NPN	SINGLE	NO			.8 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL			100			SILICON	50 V	35 ns		300 ns		BOTTOM	O-MBCY-W3		COLLECTOR	Not Qualified
BC847AT-7-F	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	10	260
LBC846BDW1T1G	Leshan Radio	NPN		YES	100 MHz	.38 W	.1 A									Other Transistors		200	150 Cel																NOT SPECIFIED	NOT SPECIFIED
BC557AT&A	Continental Device India	PNP	SINGLE	NO	150 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		110	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC557ATA	Onsemi	PNP	SINGLE	NO	150 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		110	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC807-25LT3G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
JANTX2N2222AUBP	Microchip Technology	NPN	SINGLE	YES			.8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		NO LEAD	RECTANGULAR	1	3	SMALL OUTLINE			30	200 Cel		SILICON	50 V	35 ns	-65 Cel	300 ns		DUAL	R-CDSO-N3									MIL-19500
JANTX2N3019	Microchip Technology	NPN	SINGLE	NO	100 MHz	.8 W	1 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		15	200 Cel		SILICON	80 V				TIN LEAD	BOTTOM	O-MBCY-W3		COLLECTOR	Qualified		TO-5	e0			MIL-19500/391
ULN2802A	Vishay Intertechnology	NPN	COMPLEX	NO			.5 A	PLASTIC/EPOXY	SWITCHING	1.6 V	THROUGH-HOLE	RECTANGULAR	8	18	IN-LINE				85 Cel		SILICON	50 V		-20 Cel			DUAL	R-PDIP-T18
ZTX651Q	Diodes Incorporated	NPN	SINGLE	NO	175 MHz	1.5 W	2 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	3	IN-LINE	Other Transistors		40	200 Cel		SILICON	60 V				MATTE TIN	SINGLE	R-PSIP-W3			Not Qualified			e3	30	260	CECC
PZT2222A,115	NXP Semiconductors	NPN	SINGLE	YES	300 MHz	1.15 W	.6 A	PLASTIC/EPOXY	SWITCHING	1 V	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	1.5 W	75	150 Cel	8 pF	SILICON	40 V	35 ns		250 ns	TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
MMBT3904LT1XT	Infineon Technologies	NPN	SINGLE	YES	300 MHz		.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30			SILICON	40 V	70 ns		250 ns		DUAL	R-PDSO-G3							NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC847BSQ-7-F	Diodes Incorporated	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260	AEC-Q101
BC847CW-7-F	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BCX5616	Zetex Plc	NPN	SINGLE	YES	150 MHz	1 W	1 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	80 V				Matte Tin (Sn)	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified			e3	40	260
BCX56-16	NXP Semiconductors	NPN	SINGLE	YES	130 MHz	1 W	1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				Tin (Sn)	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified		TO-243	e3	30	260
BC546BTA	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	65 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e3
BC546BT&A	Continental Device India	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	65 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e3
BCP53-16,115	NXP Semiconductors	PNP	SINGLE	YES	145 MHz	1.5 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	1.5 W	100	150 Cel		SILICON	80 V				TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260	AEC-Q101; IEC-60134
JAN2N2219A	Microchip Technology	NPN	SINGLE	NO			.8 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL			30	200 Cel		SILICON	50 V	35 ns	-55 Cel	300 ns	TIN LEAD	BOTTOM	O-MBCY-W3		COLLECTOR	Qualified		TO-205AD	e0			MIL-19500/251
BC32725BU	Onsemi	PNP	SINGLE	NO	100 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	150 Cel		SILICON	45 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3