Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
S-LBC856BLT1G	Leshan Radio																																		NOT SPECIFIED	NOT SPECIFIED
BCM847BV,115	NXP Semiconductors	NPN	SEPARATE, 2 ELEMENTS	YES	250 MHz	.3 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-F6	1	ISOLATED	Not Qualified			e3	30	260
FMMT624TA	Diodes Incorporated	NPN	SINGLE	YES	155 MHz	.625 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	125 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SS8550DTA	Onsemi	PNP	SINGLE	NO	200 MHz	1 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	25 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC847BPN-QZ	Nexperia	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.4 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE			200	150 Cel	2.2 pF	SILICON	45 V		-65 Cel			DUAL	R-PDSO-G6									AEC-Q101; IEC-60134
BCV27E6327HTSA1	Infineon Technologies	NPN	DARLINGTON	YES	170 MHz	.36 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		4000	150 Cel		SILICON	30 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
2SA2040-TL-E	Onsemi	PNP	SINGLE	YES	290 MHz		8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE			200			SILICON	50 V					SINGLE	R-PSSO-G2		COLLECTOR			TO-252
BCR108S-E6327	Infineon Technologies	NPN	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES	170 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE			70			SILICON	50 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified	BUILT IN BIAS RESISTANCE RATIO IS 21.364		e3		260
PMBT2907A,235	NXP Semiconductors	PNP	SINGLE	YES	200 MHz	.25 W	.6 A	PLASTIC/EPOXY	SWITCHING	1.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel	8 pF	SILICON	60 V	40 ns		365 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC856CMTF	Onsemi	PNP	SINGLE	YES	150 MHz	.31 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel	6 pF	SILICON	65 V				Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT4403LT3G	Onsemi	PNP	SINGLE	YES	200 MHz	.225 W	.6 A	PLASTIC/EPOXY	SWITCHING	.75 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE		.225 W	100	150 Cel	8.5 pF	SILICON	40 V	35 ns	-55 Cel	255 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
MUN5211T1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.31 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1		e3	40	260
2N4401BU	Onsemi	NPN	SINGLE	NO	250 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		255 ns	TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC547CBK	Diotec Semiconductor Ag	NPN	SINGLE	NO	300 MHz		.1 A	PLASTIC/EPOXY			WIRE	ROUND	1	3	CYLINDRICAL			420	150 Cel		SILICON	45 V					BOTTOM	O-PBCY-W3			Not Qualified		TO-92		NOT SPECIFIED	NOT SPECIFIED
SBC856ALT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		125	150 Cel		SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC846BW-QF	Nexperia	NPN	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.4 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			200	150 Cel	3 pF	SILICON	65 V		-65 Cel			DUAL	R-PDSO-G3									AEC-Q101; IEC-60134
MMBT2369ALT1G	Onsemi	NPN	SINGLE	YES	500 MHz	.225 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20	150 Cel		SILICON	15 V	12 ns	-55 Cel	18 ns	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
FMMT718	Diodes Incorporated	PNP	SINGLE	YES	180 MHz	.625 W	1.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		15	150 Cel		SILICON	20 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
PN2222ARLRAG	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		75	150 Cel		SILICON	40 V	35 ns		285 ns	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1	40	260
SBC807-16LT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC557-C	Samsung	PNP	SINGLE	NO	150 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL			420			SILICON	45 V					BOTTOM	O-PBCY-T3			Not Qualified		TO-92
BCX53-16TX	NXP Semiconductors	PNP	SINGLE	YES	140 MHz		1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE			63	150 Cel		SILICON	80 V		-55 Cel		TIN	SINGLE	R-PSSO-F3	1	COLLECTOR				e3	30	260	AEC-Q101; IEC-60134
FMMT459TA	Diodes Incorporated	NPN	SINGLE	YES	50 MHz	.806 W	.15 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	450 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
2N2920A	Texas Instruments	NPN	SEPARATE, 2 ELEMENTS	NO	60 MHz	.3 W	.03 A	METAL	AMPLIFIER		WIRE	ROUND	2	6	CYLINDRICAL	Other Transistors		300	175 Cel		SILICON	60 V					BOTTOM	O-MBCY-W6		ISOLATED	Not Qualified	LOW NOISE	TO-78		NOT SPECIFIED	NOT SPECIFIED
BC550CBU	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		420	150 Cel		SILICON	45 V				TIN	BOTTOM	O-PBCY-W3		ISOLATED	Not Qualified	LOW NOISE	TO-92	e3
BCP53-16	NXP Semiconductors	PNP	SINGLE	YES	145 MHz	1.5 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	1.5 W	100	150 Cel		SILICON	80 V				Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260	AEC-Q101; IEC-60134
BC817-16W-7	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	.2 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		60	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
2N2905AE3	Microchip Technology	PNP	SINGLE	NO	200 MHz	3 W	.6 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	200 Cel		SILICON	60 V	45 ns		300 ns	MATTE TIN	BOTTOM	O-MBCY-W3		COLLECTOR		HIGH RELIABILITY	TO-205AD	e3
2N3440	Texas Instruments	NPN	SINGLE	NO	15 MHz	5 W	1 A	METAL			WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	200 Cel		SILICON	250 V					BOTTOM	O-MBCY-W3		COLLECTOR	Not Qualified		TO-5		NOT SPECIFIED	NOT SPECIFIED
SMMBTA06WT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
MMPQ2222AR2	Onsemi	NPN	SEPARATE, 4 ELEMENTS	YES	350 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	4	16	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V				TIN LEAD	DUAL	R-PDSO-G16	1		Not Qualified			e0		235
ZTX653Q	Diodes Incorporated	NPN	SINGLE	NO	175 MHz		2 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	3	IN-LINE			25			SILICON	100 V				Matte Tin (Sn)	SINGLE	R-PSIP-W3			Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED	CECC
2N5401	Texas Instruments	PNP	SINGLE	NO	100 MHz	.63 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	150 Cel		SILICON	150 V					BOTTOM	O-PBCY-W3			Not Qualified		TO-92		NOT SPECIFIED	NOT SPECIFIED
2N5551	Texas Instruments	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		80	150 Cel		SILICON	160 V					BOTTOM	O-PBCY-W3			Not Qualified		TO-92		NOT SPECIFIED	NOT SPECIFIED
BC847BVNQ-7	Diodes Incorporated	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	300 MHz	.15 W	.1 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-F6	1			HIGH RELIABILITY		e3	30	260	AEC-Q101
PUMH1,115	NXP Semiconductors	NPN	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal	.4 W	60	150 Cel	3.5 pF	SILICON	50 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1		e3	30	260
SS8550DBU	Onsemi	PNP	SINGLE	NO	200 MHz	1 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	25 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC548CBK	Diotec Semiconductor Ag	NPN	SINGLE	NO	300 MHz		.1 A	PLASTIC/EPOXY			WIRE	ROUND	1	3	CYLINDRICAL			420	150 Cel		SILICON	30 V					BOTTOM	O-PBCY-W3			Not Qualified		TO-92		NOT SPECIFIED	NOT SPECIFIED
BCV27	Onsemi	NPN	DARLINGTON	YES	220 MHz	.25 W	1.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20000	150 Cel		SILICON	30 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBTA92,215	NXP Semiconductors	PNP	SINGLE	YES	50 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC846BMTF	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BCX53.16	Continental Device India	PNP	SINGLE	YES	145 MHz	1 W	1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				Tin (Sn)	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified		TO-243AA	e3	30	260	AEC-Q101; IEC-60134
BCX53-16	NXP Semiconductors	PNP	SINGLE	YES	145 MHz	1 W	1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				Tin (Sn)	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified		TO-243AA	e3	30	260	AEC-Q101; IEC-60134
BCX5316	Zetex Plc	PNP	SINGLE	YES	150 MHz	1 W	1 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	80 V				Matte Tin (Sn)	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified			e3	40	260
BF495	Onsemi	NPN	SINGLE	NO	120 MHz		.03 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL			35	150 Cel	1 pF	SILICON	20 V					BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92
MMBTA92LT3G	Onsemi	PNP	SINGLE	YES	50 MHz	.225 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AF	e3	30	260
PZT2222A,135	NXP Semiconductors	NPN	SINGLE	YES	300 MHz	1.15 W	.6 A	PLASTIC/EPOXY	SWITCHING	1 V	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	1.5 W	75	150 Cel	8 pF	SILICON	40 V	35 ns		250 ns	TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
SMMBTA56LT3G	Onsemi	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101