Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BC33725TAR	Onsemi	NPN	SINGLE	NO		.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
NSVMMBT2222AM3T5G	Onsemi	NPN	SINGLE	YES	300 MHz	.64 W	.6 A	PLASTIC/EPOXY	AMPLIFIER	1 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE			75	150 Cel	8 pF	SILICON	40 V	35 ns	-55 Cel	285 ns	MATTE TIN	DUAL	R-PDSO-F3	1					e3	30	260	AEC-Q101
BC817-16-7-F	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	.31 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		60	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
FCX690BTA	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	2 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		150	150 Cel		SILICON	45 V				Matte Tin (Sn)	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified			e3	30	260
PZTA42T1G	Onsemi	NPN	SINGLE	YES	50 MHz	1.5 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
BCP56-10,115	NXP Semiconductors	NPN	SINGLE	YES	180 MHz	1.5 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	1.5 W	63	150 Cel		SILICON	80 V				TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260	AEC-Q101; IEC-60134
JANTX2N2907A	Microchip Technology	PNP	SINGLE	NO	200 MHz	.4 W	.6 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	200 Cel		SILICON	60 V	45 ns	-65 Cel	300 ns	TIN LEAD	BOTTOM	O-MBCY-W3		COLLECTOR	Qualified		TO-206AA	e0			MIL-19500/291M
BC857BT-7-F	Diodes Incorporated	PNP	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
SPZTA42T1G	Onsemi	NPN	SINGLE	YES	50 MHz	1.5 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260	AEC-Q101
BCR108WH6327XTSA1	Infineon Technologies	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	170 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			70			SILICON	50 V				TIN	DUAL	R-PDSO-G3	1			BUILT-IN BIAS RESISTOR RATIO IS 21.36		e3			AEC-Q101
BC817K40E6433HTMA1	Infineon Technologies	NPN	SINGLE	YES	170 MHz		.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			250			SILICON	45 V					DUAL	R-PDSO-G3									AEC-Q101
MMBT4403-7-F	Diodes Incorporated	PNP	SINGLE	YES	200 MHz	.3 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20	150 Cel		SILICON	40 V	35 ns		255 ns	Matte Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	AEC-Q101
BC856BW-7-F	Diodes Incorporated	PNP	SINGLE	YES	200 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	65 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
ZTX753STZ	Diodes Incorporated	PNP	SINGLE	NO	100 MHz		2 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	3	IN-LINE			25			SILICON	100 V				MATTE TIN	SINGLE	R-PSIP-W3			Not Qualified			e3	30	260	CECC
JANTX2N2219A	Microchip Technology	NPN	SINGLE	NO			.8 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL			30	200 Cel		SILICON	50 V	35 ns	-55 Cel	300 ns	TIN LEAD	BOTTOM	O-MBCY-W3		COLLECTOR	Qualified		TO-205AD	e0			MIL-19500/251
ULN2003AIDRE4	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC	e4	NOT SPECIFIED	260
SS8050CTA	Onsemi	NPN	SINGLE	NO	190 MHz	1 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		120	150 Cel		SILICON	25 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BCP56-10HX	Nexperia																									TIN			1					e3	30	260
BCX41E6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	100 MHz		.8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			40			SILICON	125 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
JANTX2N3019S	Microchip Technology	NPN	SINGLE	NO			1 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL			100	200 Cel		SILICON	80 V		-65 Cel		TIN LEAD	BOTTOM	O-MBCY-W3		COLLECTOR	Qualified		TO-205AD	e0			MIL-19500/391H
MMBT2907ALT1	Onsemi	PNP	SINGLE	YES	200 MHz	.225 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	60 V	45 ns	-55 Cel	100 ns	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
BC847A-7-F	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel		SILICON	45 V		-65 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260	AEC-Q101
BC847CDXV6T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.5 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-F6	1		Not Qualified			e3	30	260
MMBTA06WT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SMBTA92E6327HTSA1	Infineon Technologies	PNP	SINGLE	YES	50 MHz		.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			25	150 Cel		SILICON	300 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
BC548CTA	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		420	150 Cel		SILICON	30 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC548CT&A	Continental Device India	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		420	150 Cel		SILICON	30 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT2907AM3T5G	Onsemi	PNP	SINGLE	YES	200 MHz	.64 W	.6 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	DUAL	R-PDSO-F3	1		Not Qualified			e3	30	260
BC848B,215	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	30 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BSR14D87Z	National Semiconductor	NPN	SINGLE	YES	300 MHz		.8 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			40			SILICON	40 V	35 ns		285 ns		DUAL	R-PDSO-G3			Not Qualified		TO-236AB
UFMMT619TA	Diodes Incorporated	NPN	SINGLE	YES	165 MHz		2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			100			SILICON	50 V					DUAL	R-PDSO-G3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
LMBT3904DW1T1G	Leshan Radio	NPN		YES	300 MHz	.15 W	.2 A									Other Transistors		100	150 Cel
BC848CWT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	30 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT5401-7-F	Diodes Incorporated	PNP	SINGLE	YES	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE		.31 W	50	150 Cel	6 pF	SILICON	150 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260	AEC-Q101
MMBT3904LP-7	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	1 W	.2 A	PLASTIC/EPOXY		.3 V	NO LEAD	RECTANGULAR	1	3	CHIP CARRIER		1 W	30	150 Cel	4 pF	SILICON	40 V	70 ns	-55 Cel	250 ns	NICKEL PALLADIUM GOLD	BOTTOM	R-PBCC-N3	1	COLLECTOR	Not Qualified	HIGH RELIABILITY		e4	30	260	AEC-Q101
SMMBT2222AWT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.15 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
ZTX653M1	Diodes Incorporated	NPN	SINGLE	YES	175 MHz		2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			25			SILICON	100 V					SINGLE	R-PSSO-G3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	CECC
BC817-16,235	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.33 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC847CLT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC856BMTF	Onsemi	PNP	SINGLE	YES	150 MHz	.31 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	6 pF	SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
ULN2004D1013TR	STMicroelectronics	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE			1000	150 Cel		SILICON	50 V				NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G16	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e4		260
ZTX653/753DCSM	Tt Electronics Plc	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	175 MHz		2 A	CERAMIC, METAL-SEALED COFIRED			NO LEAD	RECTANGULAR	2	6	SMALL OUTLINE			25	150 Cel		SILICON	100 V					DUAL	R-CDSO-N6		COLLECTOR	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
2N1893	Texas Instruments	NPN	SINGLE	NO	50 MHz	.8 W	.5 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		20	200 Cel		SILICON	80 V					BOTTOM	O-MBCY-W3		COLLECTOR	Not Qualified	HIGH RELIABILITY	TO-39		NOT SPECIFIED	NOT SPECIFIED
BC857BDW1T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
PZT2222A	Onsemi	NPN	SINGLE	YES	300 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	40 V	35 ns	-55 Cel	285 ns	TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260
BC846SH6327XTSA1	Infineon Technologies	NPN	SEPARATE, 2 ELEMENTS	YES	250 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE			200			SILICON	65 V				TIN	DUAL	R-PDSO-G6	1					e3	40	260	AEC-Q101
BC847BWH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	250 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			200			SILICON	45 V				TIN	DUAL	R-PDSO-G3	1			LOW NOISE		e3
BCX53-16TF	Nexperia	PNP	SINGLE	YES	140 MHz		1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE			63	150 Cel		SILICON	80 V		-55 Cel		TIN	SINGLE	R-PSSO-F3	1	COLLECTOR				e3	30	260	AEC-Q101; IEC-60134