Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NSVDTC144WET1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.338 W	.1 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	BIP General Purpose Small Signal			80			SILICON	50 V				Matte Tin (Sn) - annealed			DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTANCE RATIO IS 0.47		e3	NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
NSVMMBT5401M3T5G	Onsemi	PNP	SINGLE	YES	180 MHz	.13 W	.06 A	PLASTIC/EPOXY	AMPLIFIER	.6 V		FLAT	RECTANGULAR		1	3	SMALL OUTLINE				20	150 Cel	6 pF	SILICON	150 V		-55 Cel		MATTE TIN			DUAL	R-PDSO-F3	1					e3	30	260		AEC-Q101
PBHV8115T,215	NXP Semiconductors	NPN	SINGLE	YES	30 MHz	.3 W	1 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	Other Transistors			10	150 Cel		SILICON	150 V				TIN			DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
PDTC114EU	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.2 W	.1 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	BIP General Purpose Small Signal			30	150 Cel		SILICON	50 V				Tin (Sn)			DUAL	R-PDSO-G3	1		Not Qualified	BUILT IN BIAS RESISTANCE RATIO IS 1		e3	30	260
PDTC114EU/MIF	Nexperia	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	230 MHz		.1 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR		1	3	SMALL OUTLINE				30			SILICON	50 V							DUAL	R-PDSO-G3				BUILT IN BIAS RESISTANCE RATIO IS 1			NOT SPECIFIED	NOT SPECIFIED		AEC-Q101; IEC-60134
PDTC143TU,115	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.2 W	.1 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	BIP General Purpose Small Signals			200	150 Cel		SILICON	50 V				TIN			DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR		e3	30	260
PDTC144WT,215	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V		GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	BIP General Purpose Small Signal		.25 W	60	150 Cel	3.5 pF	SILICON	50 V				TIN			DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 0.47	TO-236AB	e3	30	260
PEMD13,115	NXP Semiconductors	NPN AND PNP	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING			FLAT	RECTANGULAR		2	6	SMALL OUTLINE	BIP General Purpose Small Signal			100	150 Cel		SILICON	50 V				TIN			DUAL	R-PDSO-F6	1		Not Qualified	BUILT IN BIAS RESISTOR RATIO IS 10		e3	30	260
PEMH2	NXP Semiconductors	NPN	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.2 W	.1 A	PLASTIC/EPOXY	SWITCHING			FLAT	RECTANGULAR		2	6	SMALL OUTLINE	BIP General Purpose Small Signal			80	150 Cel		SILICON	50 V				Tin (Sn)			DUAL	R-PDSO-F6	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1		e3	30	260
PMBS3904,215	NXP Semiconductors	NPN	SINGLE	YES	180 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V		GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	Other Transistors			30	150 Cel	4 pF	SILICON	40 V	110 ns		1200 ns	TIN			DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
PMBT3904M	NXP Semiconductors	NPN	SINGLE	YES	300 MHz		.2 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR		1	3	SMALL OUTLINE				30	150 Cel		SILICON	40 V	70 ns		250 ns	TIN			DUAL	R-PDSO-G3	1	COLLECTOR	Not Qualified		TO-236AB	e3
PMBT3904MB	NXP Semiconductors	NPN	SINGLE	YES	300 MHz		.2 A	PLASTIC/EPOXY	SWITCHING			NO LEAD	RECTANGULAR		1	3	CHIP CARRIER				60			SILICON	40 V				TIN			BOTTOM	R-PBCC-N3	1	COLLECTOR				e3				AEC-Q101; IEC-60134
PN4249	Onsemi	PNP	SINGLE	NO	40 MHz	.6 W	.1 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	ROUND		1	3	CYLINDRICAL	Other Transistors			100	150 Cel		SILICON	60 V				Tin/Lead (Sn/Pb)			BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e0
PUMH9-QF	Nexperia	NPN	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES	230 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.1 V		GULL WING	RECTANGULAR		2	6	SMALL OUTLINE				100	150 Cel	2.5 pF	SILICON	50 V		-55 Cel					DUAL	R-PDSO-G6				BUILT-IN BIAS RESISTOR RATIO IS 4.7						AEC-Q101; IEC-60134
SBC807-40LT3G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V		GULL WING	RECTANGULAR		1	3	SMALL OUTLINE				250	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed			DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
ZTX603	Diodes Incorporated	NPN	DARLINGTON	NO	150 MHz	1 W	1 A	PLASTIC/EPOXY				WIRE	RECTANGULAR		1	3	IN-LINE	Other Transistors			2000	200 Cel		SILICON	80 V				MATTE TIN			SINGLE	R-PSIP-W3			Not Qualified			e3	30	260
ZTX696B	Diodes Incorporated	NPN	SINGLE	NO	70 MHz	1 W	.5 A	PLASTIC/EPOXY	SWITCHING			WIRE	ROUND		1	3	IN-LINE	Other Transistors			150	200 Cel		SILICON	180 V				MATTE TIN			SINGLE	O-PSIP-W3			Not Qualified			e3	30	260
ZTX705STOA	Diodes Incorporated	PNP	DARLINGTON	NO	160 MHz		1 A	PLASTIC/EPOXY	SWITCHING			WIRE	RECTANGULAR		1	3	IN-LINE				2000			SILICON	120 V				MATTE TIN			SINGLE	R-PSIP-W3			Not Qualified			e3	10	260		CECC
2N2219AP	Microsemi
2N3439PBFREE	Central Semiconductor	NPN	SINGLE	NO	15 MHz	1 W	1 A	METAL		.5 V		WIRE	ROUND		1	3	CYLINDRICAL			1 W	30	200 Cel	10 pF	SILICON	350 V		-65 Cel		MATTE TIN OVER NICKEL			BOTTOM	O-MBCY-W3					TO-39	e3
2N3904,126	NXP Semiconductors	NPN	SINGLE	NO	300 MHz		.2 A	PLASTIC/EPOXY	SWITCHING	.3 V		THROUGH-HOLE	ROUND		1	3	CYLINDRICAL				100	150 Cel	4 pF	SILICON	40 V	65 ns		240 ns	TIN			BOTTOM	O-PBCY-T3	NOT APPLICABLE		Not Qualified		TO-92	e3	NOT SPECIFIED	NOT SPECIFIED
2N5550	Texas Instruments	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER			WIRE	ROUND		1	3	CYLINDRICAL	Other Transistors			60	150 Cel		SILICON	140 V							BOTTOM	O-PBCY-W3			Not Qualified		TO-92		NOT SPECIFIED	NOT SPECIFIED
2SB1201S-TL-E	Onsemi	PNP	SINGLE	YES	150 MHz		2 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR		1	2	SMALL OUTLINE				140			SILICON	50 V							SINGLE	R-PSSO-G2		COLLECTOR			TO-252
2SC2655-Y(TE6,F,M)	Toshiba	NPN	SINGLE	NO	100 MHz	.9 W	2 A	PLASTIC/EPOXY	SWITCHING	.5 V		THROUGH-HOLE	ROUND		1	3	CYLINDRICAL			.9 W	120	150 Cel	30 pF	SILICON	50 V							BOTTOM	O-PBCY-T3
2SC2655L-Y-AP	Micro Commercial Components	NPN	SINGLE	NO	100 MHz		2 A	PLASTIC/EPOXY				THROUGH-HOLE	ROUND		1	3	CYLINDRICAL				120			SILICON	50 V							BOTTOM	O-PBCY-T3	1				TO-92
2SCR513P5T100	ROHM																												TIN					1					e3	10	260
2SCR533P5T100	ROHM	NPN	SINGLE	YES	320 MHz		3 A	PLASTIC/EPOXY	SWITCHING			FLAT	RECTANGULAR		1	3	SMALL OUTLINE				180			SILICON	50 V				TIN			SINGLE	R-PSSO-F3	1	COLLECTOR				e3	10	260
40361	New Jersey Semiconductor Products	PNP	SINGLE				.7 A		AMPLIFIER						1							200 Cel		SILICON			-65 Cel
BC817DPN-AU_R1_000A1	Panjit International	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz		.5 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR		2	6	SMALL OUTLINE				40	150 Cel		SILICON	45 V		-55 Cel					DUAL	R-PDSO-G6							NOT SPECIFIED	NOT SPECIFIED		AEC-Q101; TS 16949
BC848CWT1	Onsemi	NPN	SINGLE	YES	100 MHz	.0024 W	.1 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	Other Transistors			420	150 Cel		SILICON	30 V				TIN LEAD			DUAL	R-PDSO-G3			Not Qualified			e0		235
BC857BTQ-7	Diodes Incorporated	PNP	SINGLE	YES	100 MHz		.1 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR		1	3	SMALL OUTLINE				220			SILICON	45 V				MATTE TIN			DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3		260		AEC-Q101
BCM857BS	NXP Semiconductors	PNP	SEPARATE, 2 ELEMENTS	YES	175 MHz	.3 W	.1 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR		2	6	SMALL OUTLINE	Other Transistors			200	150 Cel		SILICON	45 V				Tin (Sn)			DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
BCM857BS/ZLX	Nexperia																																							NOT SPECIFIED	NOT SPECIFIED
BCX54-16TF	Nexperia																												TIN					1					e3	30	260		AEC-Q101; IEC-60134
BF820W,135	NXP Semiconductors	NPN	SINGLE	YES	60 MHz	.2 W	.05 A	PLASTIC/EPOXY		.6 V		GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	Other Transistors			50	150 Cel	1.6 pF	SILICON	300 V				TIN			DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
DMN61D9UDW-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		.41 W		PLASTIC/EPOXY	SWITCHING		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			150 Cel		SILICON			-55 Cel		MATTE TIN	3.5 ohm	.35 A	DUAL	R-PDSO-G6						e3		260	2.5 pF	MIL-STD-202
DTC114YETL	ROHM	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	250 MHz	.15 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V		GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	BIP General Purpose Small Signal		.15 W	68	150 Cel		SILICON	50 V				TIN SILVER COPPER			DUAL	R-PDSO-G3	1		Not Qualified	BUILT IN BIAS RESISTOR RATIO IS 4.7		e1	10	260
DTC143ZET1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	BIP General Purpose Small Signal			80	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed			DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 0.1		e3	40	260
DXT2010P5-13	Diodes Incorporated	NPN	SINGLE	YES	130 MHz	3.2 W	6 A	PLASTIC/EPOXY	SWITCHING			FLAT	RECTANGULAR		1	3	SMALL OUTLINE	Other Transistors			20	150 Cel		SILICON	60 V				MATTE TIN			DUAL	R-PDSO-F3	1	COLLECTOR	Not Qualified		TO-252	e3	30	260
FMMT493	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	.5 W	1 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	Other Transistors			20	150 Cel		SILICON	100 V		-55 Cel		MATTE TIN			DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
FMMT589TA	Diodes Incorporated	PNP	SINGLE	YES	100 MHz	.5 W	.001 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR		1	3	SMALL OUTLINE	Other Transistors			40	150 Cel		SILICON	30 V				MATTE TIN			DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
JANS2N3501UB/TR	Microchip Technology	NPN	SINGLE	YES		1.5 W	.3 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	.4 V		NO LEAD	RECTANGULAR		1	3	SMALL OUTLINE			.5 W	20	200 Cel	8 pF	SILICON	150 V	115 ns	-65 Cel	1150 ns				DUAL	R-CDSO-N3				HIGH RELIABILITY						MIL-19500
KSD1616YTA	Fairchild Semiconductor	NPN	SINGLE	NO	160 MHz	.75 W	1 A	PLASTIC/EPOXY	SWITCHING			THROUGH-HOLE	ROUND		1	3	CYLINDRICAL	Other Transistors			135	150 Cel		SILICON	50 V				MATTE TIN			BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT3904LRFG	Taiwan Semiconductor																												MATTE TIN					1					e3	30	260
MMBT5401M3T5G	Onsemi	PNP	SINGLE	YES	180 MHz	.13 W	.06 A	PLASTIC/EPOXY	AMPLIFIER	.6 V		FLAT	RECTANGULAR		1	3	SMALL OUTLINE				20	150 Cel	6 pF	SILICON	150 V		-55 Cel					DUAL	R-PDSO-F3	1						NOT SPECIFIED	260
MPSA56BK	Diotec Semiconductor Ag																																							NOT SPECIFIED	NOT SPECIFIED
MPSA56D27Z	National Semiconductor	PNP	SINGLE	NO	50 MHz		.5 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	ROUND		1	3	CYLINDRICAL				100			SILICON	80 V							BOTTOM	O-PBCY-T3			Not Qualified	HIGH CURRENT DRIVER	TO-92
NSVMMUN2212LT1G	Onsemi	NPN		YES		.4 W	.1 A								1			BIP General Purpose Small Signal			60			SILICON					MATTE TIN					1					e3	30	260