Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BC846BW-QX	Nexperia	NPN	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.4 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			200	150 Cel	3 pF	SILICON	65 V		-65 Cel			DUAL	R-PDSO-G3									AEC-Q101; IEC-60134
BC848BLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	4.5 pF	SILICON	30 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
JANS2N2905A	Microchip Technology	PNP	SINGLE	NO	200 MHz	.6 W	.6 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	200 Cel		SILICON	60 V	45 ns		300 ns	TIN LEAD	BOTTOM	O-MBCY-W3		COLLECTOR	Qualified		TO-205AD	e0			MIL-19500/290
BC848CE6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	250 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			420	150 Cel		SILICON	30 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
PZT2222AT3G	Onsemi	NPN	SINGLE	YES	300 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
BC847BPN,125	NXP Semiconductors	NPN AND PNP		YES	100 MHz	.4 W	.1 A									BIP General Purpose Small Signal		200	150 Cel							TIN			1					e3	30	260
BC850CE6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	250 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			420			SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e3
ULN2004ADRG4	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC	e4	NOT SPECIFIED	260
BC847AWT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.0024 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC850CLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC548BBK	Diotec Semiconductor Ag	NPN	SINGLE	NO	300 MHz		.1 A	PLASTIC/EPOXY			WIRE	ROUND	1	3	CYLINDRICAL			200	150 Cel		SILICON	30 V					BOTTOM	O-PBCY-W3			Not Qualified		TO-92		NOT SPECIFIED	NOT SPECIFIED
LBC846BPDW1T1G	Leshan Radio	NPN AND PNP		YES	100 MHz	.38 W	.1 A									BIP General Purpose Small Signal		200	150 Cel							TIN			1					e3		260
MMBT5550LT1G	Onsemi	NPN	SINGLE	YES	200 MHz	.3 W	.6 A	PLASTIC/EPOXY	SWITCHING	.25 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			20	150 Cel		SILICON	140 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
SBC857BDW1T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101
MMDT3904-7-F	Diodes Incorporated	NPN	SEPARATE, 2 ELEMENTS	YES	300 MHz	.2 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	AEC-Q101
BC807-16LT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
JANTX2N3700UB	Microchip Technology	NPN	SINGLE	YES			1 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		NO LEAD	RECTANGULAR	1	3	SMALL OUTLINE			15	200 Cel		SILICON	80 V		-65 Cel		TIN LEAD	DUAL	R-CDSO-N3			Qualified	HIGH RELIABILITY		e0			MIL-19500
SMBT2222A	Infineon Technologies	NPN	SINGLE	YES	300 MHz	.33 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	40	260
BC847BPN-QH	Nexperia	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.4 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE			200	150 Cel	2.2 pF	SILICON	45 V		-65 Cel			DUAL	R-PDSO-G6									AEC-Q101; IEC-60134
FMMT720TA	Diodes Incorporated	PNP	SINGLE	YES	190 MHz	.625 W	1.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		12	150 Cel		SILICON	40 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC546BBK	Diotec Semiconductor Ag	NPN	SINGLE	NO	300 MHz		.1 A	PLASTIC/EPOXY			WIRE	ROUND	1	3	CYLINDRICAL			200	150 Cel		SILICON	65 V					BOTTOM	O-PBCY-W3			Not Qualified		TO-92		NOT SPECIFIED	NOT SPECIFIED
MMBTA92-7-F	Diodes Incorporated	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
PDTC114ET,235	NXP Semiconductors	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	100 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		30	150 Cel	3.5 pF	SILICON	50 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1	TO-236AB	e3	30	260
BC807-40/A2,215	NXP Semiconductors	PNP	SINGLE	YES									1			Other Transistors			150 Cel
BC856AW,115	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		125	150 Cel	5 pF	SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SPZT2907AT1G	Onsemi	PNP	SINGLE	YES	200 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260	AEC-Q101
DTC114EKAT146	ROHM	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	250 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal	.2 W	30	150 Cel		SILICON	50 V				TIN SILVER COPPER	DUAL	R-PDSO-G3	1		Not Qualified	BUILT IN BIAS RESISTOR RATIO IS 1		e1	10	260
JANTXV2N2905A	Texas Instruments	PNP	SINGLE	NO			.6 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL			50			SILICON	60 V	45 ns		300 ns		BOTTOM	O-MBCY-W3		COLLECTOR	Not Qualified		TO-39
MMPQ2907A	Onsemi	PNP	SEPARATE, 4 ELEMENTS	YES	250 MHz	1 W	.6 A	PLASTIC/EPOXY	SWITCHING	1.6 V	GULL WING	RECTANGULAR	4	16	SMALL OUTLINE	Other Transistors	1 W	50	150 Cel	6 pF	SILICON	60 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G16	3		Not Qualified		MS-012AC	e3	30	260
PMBT2222AMB	Nexperia																									TIN			1					e3	30	260
UFMMT458TA	Diodes Incorporated	NPN	SINGLE	YES	50 MHz		.225 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			100			SILICON	400 V					DUAL	R-PDSO-G3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BCP56TX	Nexperia	NPN	SINGLE	YES	155 MHz		1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE			63			SILICON	80 V				TIN	DUAL	R-PDSO-G4	1	COLLECTOR				e3	30	260	AEC-Q101; IEC-60134
NSVBC817-40WT1G	Onsemi	NPN	SINGLE	YES	100 MHz		.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			40			SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
BC32740TA	Onsemi	PNP	SINGLE	NO	100 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		170	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC327-40T&A	Continental Device India	PNP	SINGLE	NO	100 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		170	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT4401-13-F	Diodes Incorporated	NPN	SINGLE	YES	250 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		255 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
MPSA06RA	Onsemi	NPN	SINGLE	NO	100 MHz	.625 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
LBC807-25LT1G	Leshan Radio	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				Tin (Sn)	DUAL	R-PDSO-G3						e3	NOT SPECIFIED	NOT SPECIFIED
MUN5311DW1T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.385 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		35	150 Cel		SILICON	50 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO 1		e3	30	260
SBC857CLT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC807-40/DG,215	NXP Semiconductors	PNP	SINGLE	YES									1			Other Transistors			150 Cel
BC847BPN-QF	Nexperia	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.4 W	.1 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE			200	150 Cel	2.2 pF	SILICON	45 V		-65 Cel			DUAL	R-PDSO-G6									AEC-Q101; IEC-60134
BC846BW	NXP Semiconductors	NPN	SINGLE	YES	100 MHz		.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	3 pF	SILICON	65 V				Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBTA06Q-7-F	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	.35 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260	AEC-Q101
STR2550	STMicroelectronics	PNP	SINGLE	YES		.5 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		10	150 Cel		SILICON	500 V				MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260
BCM857BS,115	NXP Semiconductors	PNP	SEPARATE, 2 ELEMENTS	YES	175 MHz	.3 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
2N4401TFR	Onsemi	NPN	SINGLE	NO	250 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		255 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
NSVMMBT5401LT3G	Onsemi	PNP	SINGLE	YES	100 MHz		.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			50			SILICON	150 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101