Small Signal Bipolar Junction Transistors (BJT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BC847

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

110

150 Cel

SILICON

45 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

SMMBT5551LT1G

Onsemi

NPN

SINGLE

YES

.3 W

.6 A

PLASTIC/EPOXY

SWITCHING

.2 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

160 V

-55 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

TO-236

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

2N2907ACSM

Tt Electronics Plc

PNP

SINGLE

YES

200 MHz

.6 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.35 W

50

200 Cel

SILICON

60 V

45 ns

100 ns

DUAL

R-CDSO-N3

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

MMBT2222ALT1

Onsemi

NPN

SINGLE

YES

300 MHz

.225 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

35

150 Cel

SILICON

40 V

35 ns

-55 Cel

285 ns

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

BC857C,235

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.65 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

420

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

ULN2003ANSR

Texas Instruments

NPN

COMPLEX

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

7

16

SMALL OUTLINE

SILICON

50 V

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G16

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e4

NOT SPECIFIED

260

JAN2N2222AUB

Microchip Technology

NPN

SINGLE

YES

.8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

200 Cel

SILICON

50 V

35 ns

300 ns

TIN LEAD

DUAL

R-CDSO-N3

Qualified

e0

MIL-19500/255

ULN2003AIPWRG4

Texas Instruments

NPN

COMPLEX

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

7

16

SMALL OUTLINE

SILICON

50 V

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G16

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MO-153AB

e4

NOT SPECIFIED

260

BC807-25,235

NXP Semiconductors

PNP

SINGLE

YES

80 MHz

.25 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BC847C,235

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

420

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

COLLECTOR

Not Qualified

TO-236AB

e3

30

260

IEC-60134

JANSR2N2222AUB

Microchip Technology

NPN

SINGLE

YES

.8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

200 Cel

SILICON

50 V

35 ns

300 ns

TIN LEAD

DUAL

R-CDSO-N3

Qualified

e0

MIL-19500/255

2N2905A

Texas Instruments

PNP

SINGLE

NO

200 MHz

.6 W

.6 A

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

175 Cel

SILICON

60 V

45 ns

100 ns

BOTTOM

O-MBCY-W3

COLLECTOR

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

BC807.40

Central Semiconductor

PNP

SINGLE

YES

100 MHz

.3 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

45 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

HIGH CURRENT

e0

BC80740

Fairchild Semiconductor

PNP

SINGLE

YES

100 MHz

.35 W

.8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

170

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BC547BG

Onsemi

NPN

SINGLE

NO

300 MHz

.625 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

200

150 Cel

SILICON

45 V

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

40

260

FMMT458TA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.5 W

.225 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

400 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

BC817-16W,115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

5 pF

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

JANTXV2N2222AUB

Microchip Technology

NPN

SINGLE

YES

.8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

30

200 Cel

SILICON

50 V

35 ns

300 ns

TIN LEAD

DUAL

R-CDSO-N3

Qualified

e0

MIL-19500/255

2N2907AUA

Microchip Technology

PNP

SINGLE

YES

1.16 W

.6 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

NO LEAD

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

50

200 Cel

SILICON

60 V

45 ns

300 ns

TIN LEAD

DUAL

R-CDSO-N4

Not Qualified

e0

BC547BBK

Diotec Semiconductor Ag

NPN

SINGLE

NO

300 MHz

.1 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

200

150 Cel

SILICON

45 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

SBC846BPDW1T1G

Onsemi

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.38 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

.65 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

200

150 Cel

4.5 pF

SILICON

65 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

BC846BWT1G

Onsemi

NPN

SINGLE

YES

100 MHz

.0024 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

65 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

PMBT3904,215

NXP Semiconductors

NPN

SINGLE

YES

300 MHz

.3 W

.2 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

4 pF

SILICON

40 V

70 ns

250 ns

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

MMBT5551-7-F

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

.3 W

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

160 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

MMBT2222LT1G

Onsemi

NPN

SINGLE

YES

250 MHz

.225 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

75

150 Cel

SILICON

30 V

35 ns

285 ns

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

30

260

BC856,215

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.65 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

125

150 Cel

SILICON

65 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BC817-40LT3G

Onsemi

NPN

SINGLE

YES

100 MHz

.3 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

45 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

BC80725

Fairchild Semiconductor

PNP

SINGLE

YES

100 MHz

.35 W

.8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

45 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

BC807.25

Central Semiconductor

PNP

SINGLE

YES

100 MHz

.3 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

45 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

HIGH CURRENT

e0

BC857-B

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

LOW NOISE

e3

BC857C-7-F

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

420

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

BCP56-16

NXP Semiconductors

NPN

SINGLE

YES

180 MHz

1.5 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

1.5 W

100

150 Cel

SILICON

80 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

IEC 60134

PN2907ABU

Onsemi

PNP

SINGLE

NO

200 MHz

.625 W

.8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

50

150 Cel

SILICON

60 V

45 ns

100 ns

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

BC846S,115

NXP Semiconductors

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

110

150 Cel

SILICON

65 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

BC857BTT1G

Onsemi

PNP

SINGLE

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

220

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

ULN2003AID

Texas Instruments

NPN

COMPLEX

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

7

16

SMALL OUTLINE

SILICON

50 V

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G16

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AC

e4

NOT SPECIFIED

260

BC846ALT1G

Onsemi

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

110

150 Cel

4.5 pF

SILICON

65 V

-55 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

BCR108E6327HTSA1

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

170 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signals

70

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

e3

BC856B-7-F

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

220

150 Cel

SILICON

65 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

BC807-40,235

NXP Semiconductors

PNP

SINGLE

YES

80 MHz

.25 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

250

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BC847BVN,115

NXP Semiconductors

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

200

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

SS8050G

Changzhou Galaxy Century Microelectronics

NPN

SINGLE

YES

190 MHz

.3 W

1.5 A

PLASTIC/EPOXY

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

.3 W

40

150 Cel

9 pF

SILICON

25 V

-55 Cel

DUAL

R-PDSO-G3

SS8050-G

Comchip Technology

NPN

SINGLE

YES

100 MHz

1.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

25 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

BC847CWT1G

Onsemi

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

420

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

ULN2004AD

Texas Instruments

NPN

COMPLEX

YES

.5 A

PLASTIC/EPOXY

SWITCHING

1.6 V

GULL WING

RECTANGULAR

7

16

SMALL OUTLINE

SILICON

50 V

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G16

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AC

e4

NOT SPECIFIED

260

BC847ALT1G

Onsemi

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

PLASTIC/EPOXY

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

110

150 Cel

4.5 pF

SILICON

45 V

-55 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

ULN2003AIDRG4

Texas Instruments

NPN

COMPLEX

YES

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

7

16

SMALL OUTLINE

SILICON

50 V

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G16

1

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-012AC

e4

NOT SPECIFIED

260

PZT2222AT1G

Onsemi

NPN

SINGLE

YES

300 MHz

1.5 W

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

40 V

35 ns

285 ns

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

TO-261AA

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395