Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
ZTX753STOA	Zetex Plc	PNP	SINGLE	NO	100 MHz		2 A	PLASTIC/EPOXY	SWITCHING	.5 V	WIRE	RECTANGULAR	1	3	IN-LINE		2.5 W	25	200 Cel	30 pF	SILICON	100 V				MATTE TIN	SINGLE	R-PSIP-W3	1		Not Qualified			e3	10	260	CECC
BC847PN-7-F	Diodes Incorporated	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	300 MHz	.2 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signals		200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G6	1	ISOLATED	Not Qualified	HIGH RELIABILITY		e3	30	260
PDTC114ET-QR	Nexperia	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	230 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.1 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel	2.5 pF	SILICON	50 V		-65 Cel			DUAL	R-PDSO-G3				BUILT IN BIAS RESISTANCE RATIO IS 1					AEC-Q101; IEC-60134
PMBT3904,235	NXP Semiconductors	NPN	SINGLE	YES	300 MHz	.25 W	.2 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel	4 pF	SILICON	40 V	70 ns		250 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC817-16W,135	NXP Semiconductors	NPN	SINGLE	YES	100 MHz		.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel	5 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BCP5616TA	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR		HIGH RELIABILITY		e3	30	260	AEC-Q101
FMMT625TA	Diodes Incorporated	NPN	SINGLE	YES	135 MHz	.625 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	150 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SBC856BWT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
BC847BDW1T3G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
SMMBT2369ALT1G	Onsemi	NPN	SINGLE	YES		.3 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20	150 Cel		SILICON	15 V	12 ns		18 ns	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
ZTX751	Diodes Incorporated	PNP	SINGLE	NO	140 MHz	1 W	2 A	PLASTIC/EPOXY			WIRE	RECTANGULAR	1	3	IN-LINE	Other Transistors		40	200 Cel		SILICON	60 V				MATTE TIN	SINGLE	R-PSIP-W3			Not Qualified			e3
2N5550TA	Onsemi	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		20	150 Cel		SILICON	140 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
2N5550T&A	Continental Device India	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		20	150 Cel		SILICON	140 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
PMBT2222A/DG215	Nexperia
2N2222AUB/TR	Microchip Technology	NPN	SINGLE	YES			.8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		NO LEAD	RECTANGULAR	1	3	SMALL OUTLINE			30			SILICON	50 V					DUAL	R-CDSO-N3									MIL-19500/255
BC33725TF	Onsemi	NPN	SINGLE	NO		.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BF495C	NXP Semiconductors	NPN	SINGLE	NO	120 MHz		.03 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL			67	150 Cel	1 pF	SILICON	20 V					BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92
BC847BV-7	Diodes Incorporated	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-F6	1		Not Qualified			e3	30	260
ZTX753STOB	Zetex Plc	PNP	SINGLE	NO	100 MHz		2 A	PLASTIC/EPOXY	SWITCHING	.5 V	WIRE	RECTANGULAR	1	3	IN-LINE		2.5 W	25	200 Cel	30 pF	SILICON	100 V				MATTE TIN	SINGLE	R-PSIP-W3	1		Not Qualified			e3	10	260	CECC
2N2222ADCSM	Tt Electronics Plc	NPN	SEPARATE, 2 ELEMENTS	YES	300 MHz		.6 A	PLASTIC/EPOXY	SWITCHING		NO LEAD	RECTANGULAR	2	6	CHIP CARRIER			40	200 Cel		SILICON	40 V	35 ns		285 ns		BOTTOM	R-PBCC-N6			Not Qualified	HIGH RELIABILITY	MO-041BB		NOT SPECIFIED	NOT SPECIFIED
ULQ2003ADRG4	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC	e4	NOT SPECIFIED	260
BC847CWH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	250 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			420			SILICON	45 V				TIN	DUAL	R-PDSO-G3	1			LOW NOISE		e3
LBC847CLT1G	Leshan Radio	NPN	SINGLE	YES	100 MHz	.225 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1					e3
BC856ALT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.225 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		125	150 Cel		SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
2N5551BU	Onsemi	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	160 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BCX56-10,115	NXP Semiconductors	NPN	SINGLE	YES	180 MHz		1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE			63	150 Cel		SILICON	80 V				TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified		TO-243AA	e3	30	260	AEC-Q101; IEC-60134
UFMMT718TA	Diodes Incorporated	PNP	SINGLE	YES	180 MHz		1.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			15			SILICON	20 V					DUAL	R-PDSO-G3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MMSS8050-L-TP	Micro Commercial Components	NPN	SINGLE	YES	100 MHz	.3 W	1.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		120	150 Cel		SILICON	25 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	10	260
PZT2907AT1G	Onsemi	PNP	SINGLE	YES	200 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	60 V	45 ns	-65 Cel	100 ns	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
2N4401RLRAG	Onsemi	NPN	SINGLE	NO	250 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		255 ns	TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
BC847BVC-7	Diodes Incorporated	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-F6	1		Not Qualified	HIGH RELIABILITY		e3	30	260
LBC817-16LT1G	Leshan Radio	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V				Tin (Sn)	DUAL	R-PDSO-G3						e3
SMBTA56E6327HTSA1	Infineon Technologies	PNP	SINGLE	YES	100 MHz		.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			100	150 Cel		SILICON	80 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
BCM857BV,115	NXP Semiconductors	PNP	SEPARATE, 2 ELEMENTS	YES	175 MHz	.3 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-F6	1					e3	30	260
BCR108WH6433XTMA1	Infineon Technologies	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	170 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			70			SILICON	50 V					DUAL	R-PDSO-G3				BUILT-IN BIAS RESISTOR RATIO IS 21.36			NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
PDTC114ET-QVL	Nexperia	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	230 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.1 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel	2.5 pF	SILICON	50 V		-65 Cel			DUAL	R-PDSO-G3				BUILT IN BIAS RESISTANCE RATIO IS 1					AEC-Q101; IEC-60134
BC847BW-QX	Nexperia	NPN	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.4 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			200	150 Cel	1.5 pF	SILICON	45 V		-65 Cel		TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101; IEC-60134
SMUN5211DW1T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.256 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		35			SILICON	50 V				MATTE TIN	DUAL	R-PDSO-G6	1			BUILT-IN BIAS RESISTOR RATIO IS 1		e3	30	260	AEC-Q101
SDTC114EET1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTOR RATIO IS 1		e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC857CM,315	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.43 W	.1 A	PLASTIC/EPOXY	SWITCHING		NO LEAD	RECTANGULAR	1	3	CHIP CARRIER	Other Transistors		420	150 Cel		SILICON	45 V				TIN	BOTTOM	R-PBCC-N3	1	COLLECTOR	Not Qualified			e3	30	260
BCX53-16,146	NXP Semiconductors	PNP	SINGLE	YES	145 MHz	1 W	1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				TIN	SINGLE	R-PSSO-F3	1	COLLECTOR			TO-243AA	e3	30	260	AEC-Q101; IEC-60134
NSS12201LT1G	Onsemi	NPN	SINGLE	YES	150 MHz	.54 W	2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	12 V	200 ns		460 ns	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
PUMH11,115	NXP Semiconductors	NPN	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES	230 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		30	150 Cel		SILICON	50 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified	BUILT IN BIAS RESISTOR RATIO IS 1		e3	30	260	AEC-Q101
BCX54-16,115	NXP Semiconductors	NPN	SINGLE	YES	130 MHz	1 W	1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V				TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified		TO-243AA	e3	30	260
JANSR2N2219A	Microchip Technology	NPN	SINGLE	NO			.8 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL			30			SILICON	50 V	35 ns		300 ns	TIN LEAD	BOTTOM	O-MBCY-W3			Qualified		TO-205AD	e0			MIL-19500/251
2N5551TFR	Onsemi	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	160 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BCR512E6327HTSA1	Infineon Technologies	NPN	SINGLE WITH BUILT-IN RESISTOR	YES	100 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			60			SILICON	50 V				TIN	DUAL	R-PDSO-G3	1			BUILT-IN BIAS RESISTOR RATIO 1		e3
BC857BV,115	NXP Semiconductors	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-F6	1		Not Qualified			e3	30	260