RF Small Signal Field Effect Transistors (FET)

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
ATF-58143	Broadcom																															NOT SPECIFIED	NOT SPECIFIED
ATF-331M4-TR1	Broadcom	N-CHANNEL	SINGLE	YES	METAL	AMPLIFIER	5.5 V	13.5 dB	NO LEAD	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.4 W	160 Cel	SILICON	GOLD		DUAL	R-MDSO-N4	1		Not Qualified	LOW NOISE		e4		260
ATF-52189-TR1G	Broadcom
ATF-36077	Broadcom	N-CHANNEL												.06 A			FET RF Small Signal		.18 W	150 Cel			.06 A
ATF-531P8	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	7 V	18.5 dB	NO LEAD	SQUARE	DEPLETION MODE	1	C BAND		8	SMALL OUTLINE		HIGH ELECTRON MOBILITY			SILICON		.3 A	DUAL	S-PDSO-N8		SOURCE		LOW NOISE			NOT SPECIFIED	NOT SPECIFIED
ATF-36077STRG	Broadcom	N-CHANNEL	SINGLE	YES	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	3 V	11 dB	FLAT	UNSPECIFIED	DEPLETION MODE	1	KU BAND		4	MICROWAVE		HIGH ELECTRON MOBILITY			SILICON	GOLD		UNSPECIFIED	X-CXMW-F4	1	SOURCE	Not Qualified			e4
ATF-541M4	Broadcom																															NOT SPECIFIED	NOT SPECIFIED
ATF-36163	Broadcom	N-CHANNEL												.04 A			FET RF Small Signal		.18 W	150 Cel			.04 A									NOT SPECIFIED	NOT SPECIFIED
ATF-58143-TR1	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5 V	15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.5 W	150 Cel	SILICON	TIN LEAD	.1 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
ATF-521P8	Broadcom																															NOT SPECIFIED	NOT SPECIFIED
ATF-54143-BLK	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5 V	15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.12 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.725 W	150 Cel	GALLIUM ARSENIDE	TIN LEAD	.12 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
ATF-38143-TR1	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	4.5 V	15 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND	.145 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.58 W	160 Cel	GALLIUM ARSENIDE	TIN LEAD	.145 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
ATF-531P8-TR1G	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	7 V	18.5 dB	NO LEAD	SQUARE	ENHANCEMENT MODE	1	C BAND		8	SMALL OUTLINE		HIGH ELECTRON MOBILITY			SILICON		.3 A	DUAL	S-PDSO-N8		SOURCE	Not Qualified	LOW NOISE	MO-229
ATF-531P8-TR1	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	7 V	18.5 dB	NO LEAD	SQUARE	ENHANCEMENT MODE	1	C BAND	.3 A	8	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	1 W	150 Cel	SILICON	MATTE TIN	.3 A	DUAL	S-PDSO-N8	1	SOURCE	Not Qualified	LOW NOISE	MO-229	e3		260
ATF-34143	Broadcom																															NOT SPECIFIED	NOT SPECIFIED
ATF-38143-TR2G	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	4.5 V	15 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.58 W	160 Cel	GALLIUM ARSENIDE	MATTE TIN		DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
ATF-33143-BLK	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5.5 V	13.5 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.6 W	160 Cel	SILICON	TIN LEAD		DUAL	R-PDSO-G4		SOURCE	Not Qualified	LOW NOISE		e0
ATF-36077-TRL	Broadcom	N-CHANNEL												.045 A			FET RF Small Signal		.18 W	150 Cel		Tin/Lead (Sn/Pb)	.045 A								e0
ATF-34143-TR1	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5.5 V	16 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	Other Transistors	HIGH ELECTRON MOBILITY		160 Cel	SILICON	TIN LEAD		DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
ATF-52189	Broadcom																															NOT SPECIFIED	NOT SPECIFIED
ATF-551M4	Broadcom	N-CHANNEL	SINGLE	YES	UNSPECIFIED	AMPLIFIER	5 V	15.5 dB	NO LEAD	RECTANGULAR	DEPLETION MODE	1	X BAND		4	CHIP CARRIER		HIGH ELECTRON MOBILITY			GALLIUM ARSENIDE		.1 A	BOTTOM	R-XBCC-N4				LOW NOISE			NOT SPECIFIED	NOT SPECIFIED
ATF-331M4	Broadcom																															NOT SPECIFIED	NOT SPECIFIED
ATF-54143-TR2	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5 V	15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.12 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.725 W	150 Cel	GALLIUM ARSENIDE	TIN LEAD	.12 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
ATF-53189-TR1G	Broadcom
ATF-501P8-TR2	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	7 V	13.5 dB	NO LEAD	SQUARE	ENHANCEMENT MODE	1	L BAND	1 A	8	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	3.5 W	150 Cel	SILICON	MATTE TIN	1 A	DUAL	S-PDSO-N8	1	SOURCE	Not Qualified	LOW NOISE	MO-229	e3		260
ATF-53189-BLKG	Broadcom
ATF-36163-TR1	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	3 V	9.4 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	KU BAND	.04 A	6	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.18 W	150 Cel	GALLIUM ARSENIDE	TIN LEAD	.04 A	DUAL	R-PDSO-G6			Not Qualified	LOW NOISE		e0
ATF-55143-TR2	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5 V	15.5 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.1 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.27 W	150 Cel	SILICON	TIN LEAD	.1 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
ATF-501P8	Broadcom																															NOT SPECIFIED	NOT SPECIFIED
ATF-53189-TR1	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	7 V	14 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.3 A	3	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	1 W	150 Cel	SILICON	MATTE TIN	.3 A	SINGLE	R-PSSO-F3	2	SOURCE	Not Qualified	LOW NOISE		e3		260
ATF-35143-BLKG	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5.5 V	16.5 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.3 W	160 Cel	SILICON	MATTE TIN		DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE		e3	20	260
ATF-541M4-TR2	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5 V	15.5 dB	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		4	CHIP CARRIER	FET RF Small Signal	HIGH ELECTRON MOBILITY	.36 W	150 Cel	SILICON	GOLD	.12 A	BOTTOM	R-PBCC-N4	1		Not Qualified	LOW NOISE		e4		260
ATF-52189-BLKG	Broadcom
ATF-52189-BLK	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	7 V	14 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.5 A	3	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	1.5 W	150 Cel	SILICON	MATTE TIN	.3 A	SINGLE	R-PSSO-F3	2	SOURCE	Not Qualified	LOW NOISE		e3		260
ATF-34143-TR2G	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5.5 V	16 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.725 W	160 Cel	SILICON	MATTE TIN		DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
ATF-33143-TR2G	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5.5 V	13.5 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.6 W	160 Cel	GALLIUM ARSENIDE	MATTE TIN		DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE		e3	20	260
ATF-34143-BLK	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5.5 V	16 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	Other Transistors	HIGH ELECTRON MOBILITY		160 Cel	SILICON	TIN LEAD		DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
ATF-53189	Broadcom	N-CHANNEL												.3 A			FET RF Small Signal		1 W	150 Cel			.3 A									NOT SPECIFIED	NOT SPECIFIED
ATF-58143-TR2	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5 V	15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.5 W	150 Cel	SILICON	TIN LEAD	.1 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
ATF-35143-TR2G	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5.5 V	16.5 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.3 W	160 Cel	SILICON	MATTE TIN		DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE		e3	20	260
ATF-33143-BLKG	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5.5 V	13.5 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.6 W	160 Cel	GALLIUM ARSENIDE	MATTE TIN		DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE		e3	20	260
ATF-551M4-TR2	Broadcom	N-CHANNEL	SINGLE	YES	UNSPECIFIED	AMPLIFIER	5 V	15.5 dB	NO LEAD	RECTANGULAR	DEPLETION MODE	1	X BAND		4	CHIP CARRIER	FET RF Small Signal	HIGH ELECTRON MOBILITY	.27 W	150 Cel	SILICON	GOLD	.1 A	BOTTOM	R-XBCC-N4	1		Not Qualified	LOW NOISE		e4		260
ATF-52189-TR1	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	7 V	14 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.5 A	3	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	1.5 W	150 Cel	SILICON	MATTE TIN	.3 A	SINGLE	R-PSSO-F3	2	SOURCE	Not Qualified	LOW NOISE		e3		260
ATF-33143-TR1G	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5.5 V	13.5 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.6 W	160 Cel	GALLIUM ARSENIDE	MATTE TIN		DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE		e3	20	260
ATF-58143-TR1G	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5 V	15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.5 W	150 Cel	SILICON	MATTE TIN	.1 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
ATF-541M4-TR1	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	5 V	15.5 dB	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		4	CHIP CARRIER	FET RF Small Signal	HIGH ELECTRON MOBILITY	.36 W	150 Cel	SILICON	GOLD	.12 A	BOTTOM	R-PBCC-N4	1		Not Qualified	LOW NOISE		e4		260
ATF-501P8-BLK	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	7 V	13.5 dB	NO LEAD	SQUARE	ENHANCEMENT MODE	1	L BAND	1 A	8	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	3.5 W	150 Cel	SILICON	MATTE TIN	1 A	DUAL	S-PDSO-N8	1	SOURCE	Not Qualified	LOW NOISE	MO-229	e3		260
ATF-38143-TR2	Broadcom	N-CHANNEL	SINGLE	YES	PLASTIC/EPOXY	AMPLIFIER	4.5 V	15 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND	.145 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.58 W	160 Cel	GALLIUM ARSENIDE	TIN LEAD	.145 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e0

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.