RF Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
TBB1010	Renesas Electronics	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	.25 W	PLASTIC/EPOXY	AMPLIFIER	6 V	25 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	2	VERY HIGH FREQUENCY BAND	.02 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.03 A	DUAL	R-PDSO-G6			Not Qualified					.05 pF
NE329S01-T1B	Renesas Electronics	N-CHANNEL													.09 A			FET RF Small Signal		.165 W	125 Cel			.09 A
NE800495-8	Renesas Electronics	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	20 V	9.5 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND	1.6 A	2	FLANGE MOUNT		METAL SEMICONDUCTOR		175 Cel	GALLIUM ARSENIDE		1.6 A	DUAL	R-CDFM-F2		SOURCE
3SK295ZQ-TL	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		16 dB	GULL WING	RECTANGULAR	DUAL GATE, ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	TIN LEAD	.025 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified		e0			.03 pF
NE32984D-SL	Renesas Electronics	N-CHANNEL	SINGLE	YES		UNSPECIFIED	AMPLIFIER	4 V	11 dB	FLAT	ROUND	ENHANCEMENT MODE	1	KA BAND	.09 A	4	DISK BUTTON		HETERO-JUNCTION	.165 W	150 Cel	GALLIUM ARSENIDE		.02 A	RADIAL	O-XRDB-F4
3SK197	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		28 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		.035 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified					.04 pF
2SK217ZETR	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE		JUNCTION			SILICON		.02 A	DUAL	R-PDSO-G3			Not Qualified
NE425S01-T1B	Renesas Electronics	N-CHANNEL	SINGLE	YES		UNSPECIFIED	AMPLIFIER	3 V	10.5 dB	GULL WING	ROUND	DEPLETION MODE	1	KU BAND	.09 A	4	DISK BUTTON	FET RF Small Signals	HETERO-JUNCTION	.165 W	125 Cel	SILICON		.02 A	RADIAL	O-XRDB-G4			Not Qualified
BB301M	Renesas Electronics	N-CHANNEL	SINGLE	YES	.15 W	PLASTIC/EPOXY	AMPLIFIER	6 V	22 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	.025 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.025 A	DUAL	R-PDSO-G4		ISOLATED	Not Qualified	LOW NOISE	e0			.04 pF
NE38018-67	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	3 V	12.5 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	S BAND		4	SMALL OUTLINE		HETERO-JUNCTION			GALLIUM ARSENIDE	TIN LEAD	.03 A	DUAL	R-PDSO-G4			Not Qualified		e0
NE38018-T1-67	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	3 V	12.5 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	S BAND		4	SMALL OUTLINE		HETERO-JUNCTION			SILICON		.03 A	DUAL	R-PDSO-G4				LOW NOISE
NE34018-64	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	3 V	14 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	S BAND		4	SMALL OUTLINE		HETERO-JUNCTION			SILICON	TIN LEAD	.03 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified		e0
3SK242-T2-V13	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		21 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.25 W	125 Cel	SILICON		.025 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified					.08 pF
BB301CAW-TL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.1 W	PLASTIC/EPOXY	AMPLIFIER	6 V	22 dB	GULL WING	RECTANGULAR	DUAL GATE, ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	.025 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.025 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE		20	260	.04 pF
N450184C-T1A	Renesas Electronics	N-CHANNEL													.08 A			FET RF Small Signal		.165 W	150 Cel			.08 A
3SK242-T1-VAB	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		21 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.25 W	125 Cel	SILICON		.025 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified					.08 pF
3SK253U1G	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		15 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		.025 A	DUAL	R-PDSO-G4				LOW NOISE				.03 pF
3SK222-VBA	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		21 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		125 Cel	SILICON	TIN LEAD	.025 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified		e0			.03 pF
3SK309	Renesas Electronics	N-CHANNEL													.018 A			FET RF Small Signal	METAL SEMICONDUCTOR	.1 W	125 Cel			.018 A
NE76184B-T1K	Renesas Electronics	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	5 V		FLAT	ROUND	DEPLETION MODE	1	X BAND		4	DISK BUTTON		METAL SEMICONDUCTOR			GALLIUM ARSENIDE			RADIAL	O-CRDB-F4				LOW NOISE
NE722S01-T1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	4 V		GULL WING	UNSPECIFIED	DEPLETION MODE	1	X BAND		4	MICROWAVE		METAL SEMICONDUCTOR			GALLIUM ARSENIDE	TIN BISMUTH	.04 A	UNSPECIFIED	X-PXMW-G4			Not Qualified	LOW NOISE	e6
3SK234	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		22 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		.035 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified					.03 pF
NE900275	Renesas Electronics	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	20 V		FLAT	RECTANGULAR	DEPLETION MODE	1	KU BAND	.06 A	2	FLANGE MOUNT		METAL SEMICONDUCTOR	3 W		GALLIUM ARSENIDE		.06 A	DUAL	R-CDFM-F2
2SK1215IGFTL-E	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	20 V	24 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		.03 A	DUAL	R-PDSO-G3			Not Qualified
NE72218-T1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE		METAL SEMICONDUCTOR			GALLIUM ARSENIDE	TIN BISMUTH		DUAL	R-PDSO-G4		SOURCE	Not Qualified		e6
NE25139T1U73	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	13 V	16 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.035 A	4	SMALL OUTLINE		METAL SEMICONDUCTOR	.2 W	125 Cel	GALLIUM ARSENIDE		.035 A	DUAL	R-PDSO-G4								.03 pF
NE38018T2	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	3 V	12.5 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	S BAND		4	SMALL OUTLINE		HETERO-JUNCTION			SILICON	TIN LEAD	.03 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified	LOW NOISE	e0
BB101CAU	Renesas Electronics	N-CHANNEL		YES		PLASTIC/EPOXY	AMPLIFIER	6 V		GULL WING	RECTANGULAR			ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE					SILICON		.025 A	DUAL	R-PDSO-G3			Not Qualified
2SK2113YY-TL	Renesas Electronics	N-CHANNEL		YES		PLASTIC/EPOXY	AMPLIFIER	3.5 V		GULL WING	RECTANGULAR			ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE					GALLIUM ARSENIDE		.06 A	DUAL	R-PDSO-G3			Not Qualified
3SK136	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	20 V	17 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		.035 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified
2SK439FTZ	Renesas Electronics	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON		.03 A	SINGLE	R-PSIP-T3			Not Qualified
RQA0011DNS#G1	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		16 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		3.8 A	BOTTOM	R-PBCC-N3		SOURCE						4.5 pF
NE3210S01-T1-A	Renesas Electronics	N-CHANNEL													.07 A			FET RF Small Signal		.165 W	125 Cel			.07 A
2SK360IGE01	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		.03 A	DUAL	R-PDSO-G3			Not Qualified
3SK244-UID	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		15 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.25 W	125 Cel	SILICON		.025 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified					.025 pF
BB202M	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY				GULL WING	RECTANGULAR		1		.025 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			.025 A	DUAL	R-PDSO-G4			Not Qualified
3SK206	Renesas Electronics	N-CHANNEL													.08 A			FET RF Small Signal	METAL SEMICONDUCTOR	.2 W	125 Cel			.08 A
3SK246VBB	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		19 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		.025 A	DUAL	R-PDSO-G4				LOW NOISE				.03 pF
3SK242-T1-VAA	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		21 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.25 W	125 Cel	SILICON		.025 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified					.08 pF
NE72084-M	Renesas Electronics	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED		5 V		FLAT	UNSPECIFIED	DEPLETION MODE	1	C BAND		4	MICROWAVE		METAL SEMICONDUCTOR			GALLIUM ARSENIDE		.15 A	QUAD	X-CQMW-F4				LOW NOISE
BB401M	Renesas Electronics	N-CHANNEL	SINGLE	YES	.15 W	PLASTIC/EPOXY				GULL WING	RECTANGULAR		1		.025 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			.025 A	DUAL	R-PDSO-G4			Not Qualified
2SK439ERR	Renesas Electronics	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON		.03 A	SINGLE	R-PSIP-T3			Not Qualified
3SK222-V22	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		21 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		125 Cel	SILICON	TIN LEAD	.025 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified		e0			.03 pF
3SK298ZP-TL-E	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	12 V	12 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		.025 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified	LOW NOISE				.04 pF
BB101MAU-UL	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	6 V	16 dB	GULL WING	RECTANGULAR	DUAL GATE, ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		.025 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified	LOW NOISE				.03 pF
3SK297	Renesas Electronics	N-CHANNEL	SINGLE	YES	.15 W	PLASTIC/EPOXY	AMPLIFIER	12 V	12 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.025 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.025 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified					.04 pF
NE3514S02-T1D-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	.165 W	PLASTIC/EPOXY	AMPLIFIER	3 V	8 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	K BAND		4	MICROWAVE	Other Transistors	HETERO-JUNCTION		125 Cel	SILICON	TIN BISMUTH	.015 A	QUAD	R-PQMW-F4			Not Qualified	LOW NOISE	e6
2SK521-E	Renesas Electronics	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER			WIRE	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	IN-LINE		JUNCTION			SILICON		.02 A	SINGLE	R-PSIP-W3			Not Qualified					.6 pF

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.