Broadcom - ATF-541M4-TR1

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; No. of Terminals: 3; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain Current (ID): .03 A; No. of Terminals: 4;

Broadcom's ATF-54143-TR1G is an N-channel RF FET with 5V DS breakdown voltage and 15dB power gain, ideal for amplifier applications in C band. It features a small outline package, Gull Wing terminals, and operates in enhancement mode with high electron mobility technology. With a max power dissipation of 0.725W and operating temperature of 150°C, it offers reliable performance for various RF signal amplification needs.

ATF-531P8-BLK by Broadcom is an N-channel RF FET transistor with a min DS breakdown voltage of 7V. It has a power gain of 18.5 dB and is commonly used as an amplifier in C band applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; JESD-30 Code: R-PSIP-T3; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 6 V;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: JUNCTION; JESD-30 Code: O-MBCY-W4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Case Connection: SHIELD; Transistor Element Material: SILICON; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .03 A;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: Tin (Sn); JESD-30 Code: R-PDSO-G4; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Qualification: Not Qualified; JESD-30 Code: R-PDSO-G3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; No. of Elements: 1;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): .04 A; Case Connection: SOURCE;