Broadcom - ATF-52189-TR1G

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Operating Mode: DUAL GATE, DEPLETION MODE; Minimum DS Breakdown Voltage: 12 V;

NXP Semiconductors' BF998R,215 is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a 12V DS Breakdown Voltage and 0.03A Drain Current. With GULL WING terminals and ULTRA HIGH FREQUENCY capabilities, it's ideal for small outline designs in SOURCE connections.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 7 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Minimum DS Breakdown Voltage: 20 V; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Case Connection: SOURCE; Package Shape: RECTANGULAR;

N-CHANNEL; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .25 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): .03 A; Operating Mode: DUAL GATE, DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .05 A; JEDEC-95 Code: TO-92;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Transistor Element Material: SILICON; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Terminal Form: FLAT; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Shape: ROUND;

N-CHANNEL; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-F6; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; No. of Terminals: 4; Maximum Operating Temperature: 175 Cel;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Style (Meter): FLATPACK;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4; Package Style (Meter): SMALL OUTLINE;