Broadcom - ATF-36163

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 6 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: DUAL GATE, DEPLETION MODE; JESD-30 Code: O-PRDB-F4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; No. of Terminals: 3;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; JESD-609 Code: e0;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: JUNCTION; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Small Signal Field-Effect Transistors;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 1 pF; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; JESD-30 Code: O-PBCY-T3; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Field Effect Transistor Technology: JUNCTION; Qualification: Not Qualified;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 30 V;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 2; Maximum Operating Temperature: 150 Cel;

The NXP Semiconductors BF545B is an N-CHANNEL RF FET for switching applications. Operating in DEPLETION MODE, it offers a 30V DS Breakdown Voltage and operates in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.25W, this transistor is ideal for small outline packages in high-frequency circuits.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;

RF Small Signal Field-Effect Transistors;