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| Manufacturer | Broadcom |
|---|---|
| Manufacturer's Part Number | ATF-501P8-TR2 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 13.5 dB; Maximum Power Dissipation Ambient: 3.5 W; Maximum Drain Current (ID): 1 A; |
| Datasheet | ATF-501P8-TR2 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 1 A |
| Sub-Category: | FET RF Small Signal |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | L BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Maximum Power Dissipation Ambient: | 3.5 W |
| Moisture Sensitivity Level (MSL): | 1 |
| Minimum Power Gain (Gp): | 13.5 dB |
| JEDEC-95 Code: | MO-229 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 7 V |
| Qualification: | Not Qualified |
| Additional Features: | LOW NOISE |
| Maximum Drain Current (Abs) (ID): | 1 A |
| Peak Reflow Temperature (C): | 260 |
