STMicroelectronics - SD2943W

RF Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Terminal Form: FLAT; JESD-30 Code: R-CDFM-F5;

RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Drain Current (ID): 16 A; Maximum Drain Current (Abs) (ID): 16 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 186 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Case Connection: SOURCE; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Drain Current (ID): 5 A; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-CDFP-F2; Minimum DS Breakdown Voltage: 65 V;

N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 17.8 W; No. of Elements: 1; Maximum Drain Current (ID): 2.1 A; Maximum Operating Temperature: 150 Cel;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Maximum Operating Temperature: 165 Cel; Minimum DS Breakdown Voltage: 40 V;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Drain Current (ID): 45 A; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 100 V;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 200 Cel; JESD-30 Code: O-CRFM-F4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 7 A;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Qualification: Not Qualified; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Power Dissipation Ambient: 68 W; Minimum DS Breakdown Voltage: 125 V;