RF Power Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
RD15HVF1	Mitsubishi Electric	N-CHANNEL	SINGLE	NO	48 W	PLASTIC/EPOXY	AMPLIFIER	30 V		THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		SILVER		4 A	SINGLE	R-PSFM-T3		SOURCE	Not Qualified			e4
D2203UK	Tt Electronics Plc	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	40 V		FLAT	SQUARE	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		GOLD			DUAL	S-CDFM-F4		SOURCE	Not Qualified	LOW NOISE		e4
CGHV1F006S	Wolfspeed	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	100 V		NO LEAD	RECTANGULAR	DEPLETION MODE	1	KU BAND		12	SMALL OUTLINE		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE				.95 A	DUAL	R-PDSO-N12							NOT SPECIFIED	NOT SPECIFIED
GS61008P-TR	Gan Systems	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	GALLIUM NITRIDE	-55 Cel	GOLD OVER NICKEL		90 A	BOTTOM	R-PBCC-N4	3	SOURCE				e4	30	260
IXZR08N120A	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	1200 V		THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN SILVER COPPER		8 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1
MRF1518NT1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	62.5 W	PLASTIC/EPOXY	AMPLIFIER	40 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN		4 A	QUAD	R-PQSO-N4	3	SOURCE	Not Qualified			e3	40	260
MRFE6VP5150NR1	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		PLASTIC/EPOXY	AMPLIFIER	133 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN			DUAL	R-PDFM-F4	3	SOURCE			TO-270	e3	40	260
PTVA101K02EVV1XWSA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE					NOT SPECIFIED	NOT SPECIFIED
BLF888DU	Ampleon Netherlands B V	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	104 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON					DUAL	R-CDFM-F4		SOURCE					NOT SPECIFIED	NOT SPECIFIED		IEC-60134
CGH35240F	Wolfspeed	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	84 V	10.5 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	S BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		150 Cel	GALLIUM NITRIDE	-40 Cel			24 A	DUAL	R-CDFM-F2		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MRFX1K80NR5	NXP Semiconductors																							TIN					3					e3	40	260
PTVA101K02EV-V1-R250	Wolfspeed	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V	17 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE					NOT SPECIFIED	NOT SPECIFIED
PTVA101K02EVV1	Infineon Technologies
PTVA101K02EVV1R250	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V	17 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE					NOT SPECIFIED	NOT SPECIFIED
BLF175,112	NXP Semiconductors	N-CHANNEL	SINGLE	NO	68 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V		FLAT	ROUND	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	4 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	68 W	200 Cel	SILICON			1.5 ohm	4 A	RADIAL	O-CRFM-F4	NOT APPLICABLE	ISOLATED	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
BLF369,112	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BLF6G27S-45,112	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND	20 A	2	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				20 A	DUAL	R-CDFP-F2	NOT APPLICABLE	SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BLP10H610Z	Ampleon Netherlands B V	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		PLASTIC/EPOXY	AMPLIFIER	104 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		12	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					DUAL	R-PDSO-N12		SOURCE			MO-229		NOT SPECIFIED	NOT SPECIFIED		IEC-60134
CG2H40045P	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	84 V	15 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	S BAND		2	FLATPACK		HIGH ELECTRON MOBILITY		150 Cel	GALLIUM NITRIDE	-40 Cel			6 A	DUAL	R-CDFP-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED	.6 pF
CGHV96130F	Wolfspeed
MRF300BN	NXP Semiconductors																																		40	260
MRF6VP121KHR5	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	110 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE					40	260
PTVA101K02EVP1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE					NOT SPECIFIED	NOT SPECIFIED
PTVA120501EAV1R0XTMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V	16.5 dB	FLAT	SQUARE	ENHANCEMENT MODE	1	L BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	S-CDFM-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED
D2219UK	Tt Electronics Plc	N-CHANNEL	SINGLE	YES		UNSPECIFIED	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		GOLD			DUAL	R-XDSO-G8		SOURCE	Not Qualified	LOW NOISE		e4
MRF300AN-13MHZ	NXP Semiconductors																																		NOT SPECIFIED	NOT SPECIFIED
MRF300AN-144MHZ	NXP Semiconductors																																		NOT SPECIFIED	NOT SPECIFIED
MRFE6S9060NR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	66 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON		TIN			DUAL	R-PDFM-F2	3	SOURCE	Not Qualified		TO-270AA	e3	40	260
PTFA220041MV4	Infineon Technologies	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V		NO LEAD	SQUARE	ENHANCEMENT MODE	1	S BAND		10	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	S-PDSO-N10	3	SOURCE	Not Qualified					260
TGF2023-2-02	Qorvo	N-CHANNEL	SINGLE	YES		UNSPECIFIED	AMPLIFIER			NO LEAD	RECTANGULAR	DEPLETION MODE	1	KU BAND		3	UNCASED CHIP		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE		Nickel/Gold (Ni/Au)		2.5 A	UPPER	R-XUUC-N3						e4	30	260
TGF2023-2-05	Qorvo	N-CHANNEL	SINGLE	YES		UNSPECIFIED	AMPLIFIER		17.6 dB	NO LEAD	RECTANGULAR	DEPLETION MODE	1	KU BAND	5 A	5	UNCASED CHIP		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE				5 A	UPPER	R-XUUC-N5							30	260
AFT27S006NT1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY			21 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.5 W	150 Cel		-40 Cel	TIN			DUAL	R-PDFM-F2	3					e3	40	260
ART700FHU	Ampleon Netherlands B V	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	177 V	26.8 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE							1.04 pF	IEC-60134
BLP15H9S100GZ	Ampleon Netherlands B V	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	106 V	18 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-PDSO-G2		SOURCE							.53 pF	IEC-60134
CGH40180PP	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		4	FLANGE MOUNT		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE					DUAL	R-CDFM-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
CGH55030F2	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE		GOLD NICKEL			DUAL	R-CDFM-F2		SOURCE				e4
CLF1G0035-50	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V		FLAT	RECTANGULAR	DEPLETION MODE	1	S BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE					DUAL	R-CDFM-F2		SOURCE								IEC-60134
D2225UK	Tt Electronics Plc	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		UNSPECIFIED	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		GOLD		4 A	DUAL	R-XDSO-G8			Not Qualified	LOW NOISE		e4
MRFE6VP5600HR6	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	1670 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	130 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified				40	260
NPT1012B	M/a-com Technology Solutions	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	100 V		FLAT	RECTANGULAR	DEPLETION MODE	1	S BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		200 Cel	GALLIUM NITRIDE					DUAL	R-CDFM-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED
PD55008S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	52.8 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		Matte Tin (Sn) - annealed		4 A	DUAL	R-PDSO-F2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
PD57070-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	95 W	PLASTIC/EPOXY	AMPLIFIER	65 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		Matte Tin (Sn) - annealed		7 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified			e3	30	250
PTVA123501FCV1R0XTMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V	16.5 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFP-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED
RD00HHS1-101	Mitsubishi Electric	N-CHANNEL	SINGLE	YES	3.1 W	PLASTIC/EPOXY	AMPLIFIER	30 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	HIGH FREQUENCY BAND	.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.2 A	SINGLE	R-PSSO-F3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK3075(TE12L,Q)	Toshiba
AFT09MS031NR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	317 W								1					FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN					3					e3	40	260
CGH40120F	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		150 Cel	GALLIUM NITRIDE	-40 Cel	GOLD OVER NICKEL			DUAL	R-CDFM-F2		SOURCE	Not Qualified			e4
MRF300AN-50MHZ	NXP Semiconductors																																		NOT SPECIFIED	NOT SPECIFIED

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.