NXP Semiconductors - AFT05MS003NT1

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Minimum DS Breakdown Voltage: 125 V; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Case Connection: ISOLATED; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 5; Package Shape: SQUARE; Terminal Form: NO LEAD;

N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 2;

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 18 A; No. of Elements: 2; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (Abs) (ID): 15 A; Minimum DS Breakdown Voltage: 50 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: SWITCHING; Terminal Finish: GOLD OVER NICKEL; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Operating Temperature: 200 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 65 V; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 65 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 2; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 269 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: GALLIUM ARSENIDE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Terminal Form: FLAT; Package Shape: RECTANGULAR;

N-CHANNEL; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Terminal Form: FLAT; Terminal Position: RADIAL;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Case Connection: SOURCE;

BLP10H605AZ by Ampleon Netherlands BV is a plastic/epoxy RF power FET with N-channel configuration. It operates in enhancement mode and has a min DS breakdown voltage of 104V. This transistor is commonly used as an amplifier in the L band frequency range.