NXP Semiconductors - MW6S004NT1

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 1; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-CDFM-F4; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e0;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 17 dB; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: S-CDFM-F2; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Terminal Form: FLAT;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Terminal Finish: TIN SILVER COPPER; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-CDFP-F4;

NXP Semiconductors' MRF1517NT1 is a single N-channel RF Power FET with 25V DS breakdown voltage and 4A max drain current. Ideal for amplifier applications in the UHF band, it operates in enhancement mode with a max power dissipation of 62.5W.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Terminal Position: DUAL; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 2; Transistor Application: AMPLIFIER;

NXP Semiconductors' BLF6G27S-45,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in S BAND with 20A Drain Current for AMPLIFIER applications. The METAL-OXIDE SEMICONDUCTOR technology and ENHANCEMENT MODE make it suitable for high-frequency amplification needs.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.7 W; No. of Terminals: 2; Additional Features: HIGH RELIABILITY;

N-CHANNEL; Surface Mount: YES; Terminal Position: UPPER; Qualification: Not Qualified; Highest Frequency Band: X BAND; JESD-30 Code: R-XUUC-N4;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;