RF Power Field Effect Transistors (FET)

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
NE5550234-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	12.5 W								1		.6 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					.6 A
PD55003S	STMicroelectronics	N-CHANNEL	SINGLE	YES	31.7 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		TIN LEAD		2.5 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY	e0
NE5550979A-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	25 W								1		3 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					3 A
PD55003	STMicroelectronics	N-CHANNEL	SINGLE	YES	31.7 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		TIN LEAD		2.5 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY	e0
NE5550779A-A	Renesas Electronics	N-CHANNEL	SINGLE		17.8 W								1		2.1 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					2.1 A
PD54008L-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	26.7 W	PLASTIC/EPOXY	AMPLIFIER	25 V		NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	5	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN		5 A	QUAD	S-PQCC-N5	3	SOURCE	Not Qualified	HIGH RELIABILITY	e3
BLF278	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	500 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V	20 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	VERY HIGH FREQUENCY BAND	18 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	500 W	200 Cel	SILICON			.3 ohm	18 A	DUAL	R-CDFM-F4	NOT APPLICABLE	SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
A2I22D050NR1	NXP Semiconductors																							TIN					3				e3	40	260
D2213UK	Tt Electronics Plc	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON		GOLD			DUAL	R-CDFM-F4		SOURCE	Not Qualified	LOW NOISE	e4
CGHV96050F1	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	100 V	10.75 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	X BAND	6 A	2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		150 Cel	GALLIUM NITRIDE	-40 Cel			6 A	DUAL	R-CDFM-F2
PD55025STR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON				7 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY
CG2H40035F	Wolfspeed	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	84 V	13.5 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		85 Cel	GALLIUM NITRIDE	-40 Cel			4.5 A	DUAL	R-CDFM-F2		SOURCE						.7 pF
CGH40025F	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		2	FLANGE MOUNT	FET RF Small Signal	HIGH ELECTRON MOBILITY		175 Cel	GALLIUM NITRIDE					DUAL	R-CDFM-F2		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
GS61008P-MR	Gan Systems	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	GALLIUM NITRIDE	-55 Cel	GOLD OVER NICKEL		90 A	BOTTOM	R-PBCC-N4	3	SOURCE			e4	30	260
PD55025S	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		TIN LEAD		7 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY	e0
A3G20S350-01SR3	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V	17 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	S BAND		2	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	GALLIUM NITRIDE	-55 Cel				DUAL	R-CDFP-F2						40	260
BLF245B,112	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	75 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	14 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	VERY HIGH FREQUENCY BAND	4.5 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	200 Cel	SILICON			1.5 ohm	4.5 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
PD55025	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		TIN LEAD		7 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY	e0
UF28100V	TE Connectivity	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	10 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	12 A	8	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	250 W	200 Cel	SILICON	-55 Cel			12 A	DUAL	R-CDFM-F8		SOURCE						24 pF
D1020UK	Tt Electronics Plc	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	70 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		GOLD		25 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified	LOW NOISE	e4
CG2H40045F	Wolfspeed	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	84 V	15 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	S BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		150 Cel	GALLIUM NITRIDE	-40 Cel			6 A	DUAL	R-CDFM-F2		SOURCE				NOT SPECIFIED	NOT SPECIFIED	.6 pF
MRF101AN	NXP Semiconductors																																	40	260
BLF177	NXP Semiconductors	N-CHANNEL	SINGLE	YES	220 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V		FLAT	ROUND	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	16 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	220 W	200 Cel	SILICON			.3 ohm	16 A	RADIAL	O-CRFM-F4		ISOLATED	Not Qualified
D2002UK	Tt Electronics Plc	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		GOLD		2 A	DUAL	R-CDFM-F2		SOURCE	Not Qualified	LOW NOISE	e4
CGH31240F	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE					DUAL	R-CDFM-F2		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
CGHV14500F	Wolfspeed																																	NOT SPECIFIED	NOT SPECIFIED
CGHV40100F	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V		FLAT	RECTANGULAR	DEPLETION MODE	1	S BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE		Gold (Au) - with Nickel (Ni) barrier		8.7 A	DUAL	R-CDFM-F2		SOURCE			e4	NOT SPECIFIED	NOT SPECIFIED
PTVA101K02EVV1R0XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE				NOT SPECIFIED	NOT SPECIFIED
MRFE6VS25GNR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		133 V	24.5 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel		-40 Cel	TIN			DUAL	R-PDFM-F2	3				e3	40	260
MRFX1K80HR5	NXP Semiconductors																																	40	260
MRF1513NT1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	31.2 W	PLASTIC/EPOXY	AMPLIFIER	40 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN		2 A	QUAD	R-PQSO-N4	3	SOURCE	Not Qualified		e3	40	260
MRFE6VP5300NR1	NXP Semiconductors																							TIN					3				e3	40	260
AFV121KHR5	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	112 V	18.5 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON	-40 Cel				DUAL	R-CDFM-F4		SOURCE				40	260	2.5 pF
D2003UK	Tt Electronics Plc	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		GOLD		1 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified	LOW NOISE	e4
CGHV31500F1	Wolfspeed
FLL57MK	Fujitsu	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	15 V		FLAT	RECTANGULAR	DEPLETION MODE	1	L BAND		2	FLANGE MOUNT	Other Transistors	JUNCTION	21.4 W	175 Cel	GALLIUM ARSENIDE					DUAL	R-CDFM-F2		SOURCE	Not Qualified	HIGH RELIABILITY
GS61008T-MR	Gan Systems	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			GALLIUM NITRIDE	-55 Cel	GOLD OVER NICKEL		90 A	BOTTOM	R-PBCC-N4	3	SOURCE			e4	30	260
AFT09MS007NT1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	182 W								1					FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN					3				e3	40	260
DE375-501N21A	IXYS Corporation	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	500 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				25 A	DUAL	R-PDSO-F6		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
GS61008T-TR	Gan Systems	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			GALLIUM NITRIDE	-55 Cel	GOLD OVER NICKEL		90 A	BOTTOM	R-PBCC-N4	3	SOURCE			e4	30	260
MRF9030LR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	92 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	68 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F2		SOURCE	Not Qualified			40	260
PD85025-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		MATTE TIN		7 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified		e3
BLF3G21-30,112	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4.5 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		TIN		4.5 A	DUAL	R-CDFM-F2		SOURCE	Not Qualified		e3
PD55008TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	52.8 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		Matte Tin (Sn) - annealed		4 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified	HIGH RELIABILITY	e3	30	250
UF28100H	TE Connectivity	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	10 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	250 W	200 Cel	SILICON	-55 Cel			12 A	DUAL	R-CDFM-F4		SOURCE						24 pF
UF28100M	TE Connectivity	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	10 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	12 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	250 W	200 Cel	SILICON	-55 Cel			12 A	DUAL	R-CDFM-F4		SOURCE						24 pF
GS61004B-MR	Gan Systems	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1			3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON	-55 Cel	GOLD OVER NICKEL		45 A	BOTTOM	R-PBCC-N3	3	SOURCE			e4	30	260
BLF278,112	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	500 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V	20 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	VERY HIGH FREQUENCY BAND	18 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	500 W	200 Cel	SILICON			.3 ohm	18 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.