Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
SMBT2222AE6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	300 MHz	.33 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
MMBT5401LT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	150 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
BC817-25,235	NXP Semiconductors	NPN	SINGLE	YES	100 MHz		.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			160	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3			Not Qualified		TO-236AB	e3
2N2907(A)	Digitron Semiconductors	PNP	SINGLE	NO	200 MHz	.4 W	.6 A	METAL	SWITCHING	.4 V	WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	175 Cel		SILICON	60 V	45 ns		100 ns	Tin/Lead (Sn/Pb)	BOTTOM	O-MBCY-W3	1		Not Qualified		TO-18	e0	10	235	CECC
2N2907A	Texas Instruments	PNP	SINGLE	NO	200 MHz	.4 W	.6 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	175 Cel		SILICON	60 V	45 ns		100 ns		BOTTOM	O-MBCY-W3		COLLECTOR	Not Qualified		TO-18		NOT SPECIFIED	NOT SPECIFIED
ULN2003AIDR	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC	e4	NOT SPECIFIED	260
BC547BTA	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC547BT&A	Continental Device India	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
ULN2003AD	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING	1.6 V	GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC	e4	NOT SPECIFIED	260
BC817-40W-7	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	.2 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		170	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT4403LT1G	Onsemi	PNP	SINGLE	YES	200 MHz	.225 W	.6 A	PLASTIC/EPOXY	SWITCHING	.75 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE		.225 W	100	150 Cel	8.5 pF	SILICON	40 V	35 ns	-55 Cel	255 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
SBC817-25LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
MMBT3904Q-7-F	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel	4 pF	SILICON	40 V	70 ns	-55 Cel	250 ns	MATTE TIN	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260	AEC-Q101
BC817-25LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V		-65 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
SMMBTA06LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236	e3	30	260	AEC-Q101
BC846B,215	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC847BLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	NOT SPECIFIED	NOT SPECIFIED
MMBT2222A	Onsemi	NPN	SINGLE	YES	300 MHz	.225 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		75	150 Cel		SILICON	40 V	35 ns	-55 Cel	285 ns	TIN	DUAL	R-PDSO-G3	1	COLLECTOR	Not Qualified		TO-236AA	e3	30	260
BCX19LT1G	Onsemi	NPN	SINGLE	YES		.225 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
MMBT2222AM3T5G	Onsemi	NPN	SINGLE	YES	300 MHz	.64 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-F3	1		Not Qualified			e3	30	260
2N3904BU	Onsemi	NPN	SINGLE	NO	300 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC817-25,215	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.25 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC547BTF	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC847CE6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	250 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			420			SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
MMBT2222AT-7-F	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.15 W	.6 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
ULN2003ADRG4	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC	e4	NOT SPECIFIED	260
BC817-25LT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC547BBU	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC857B,215	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC847BE6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	250 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
BC817-40W,115	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.2 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel	5 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT3904-TP	Micro Commercial Components	NPN	SINGLE	YES	300 MHz	.35 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	10	260
MMBT3906TT1G	Onsemi	PNP	SINGLE	YES	250 MHz	.15 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-65 Cel	300 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC817-40-7-F	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	.31 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		170	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
MMBT2222ATT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.15 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC847BW,115	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	3 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	IEC-60134
MMBT2222A-TP	Micro Commercial Components	NPN	SINGLE	YES	300 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		75	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	10	260
ULN2003AIPWR	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MO-153AB	e4	NOT SPECIFIED	260
MMBT2222AWT3G	Onsemi	NPN	SINGLE	YES	300 MHz		.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			40			SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
BC847C,215	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1	COLLECTOR	Not Qualified		TO-236AB	e3	30	260	IEC-60134
ULN2003ADRE4	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING	1.6 V	GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC	e4	NOT SPECIFIED	260
BC817-16LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC846BW,115	NXP Semiconductors	NPN	SINGLE	YES	100 MHz		.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	3 pF	SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC847BVN-7	Diodes Incorporated	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	300 MHz	.15 W	.1 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signals		200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-F6	1		Not Qualified			e3	30	260
2N3904TFR	Onsemi	NPN	SINGLE	NO	300 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	250 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC817.40	Central Semiconductor	NPN	SINGLE	YES	200 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel		SILICON	45 V				TIN LEAD	DUAL	R-PDSO-G3			Not Qualified	HIGH CURRENT		e0
BC81740	Zetex Plc	NPN	SINGLE	YES	200 MHz	.33 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel		SILICON	45 V				TIN LEAD	DUAL	R-PDSO-G3	1		Not Qualified			e0	10	235
MPS5172RLRMG	Onsemi	NPN	SINGLE	NO			.1 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL			100	150 Cel		SILICON	25 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260