Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BCP56-16TX	Nexperia	NPN	SINGLE	YES	155 MHz		1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE			100			SILICON	80 V				TIN	DUAL	R-PDSO-G4	1	COLLECTOR				e3	30	260	AEC-Q101; IEC-60134
MMBTA92LT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
SBC807-25LT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
ULN2803LW	Vishay Intertechnology	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING	1.6 V	GULL WING	RECTANGULAR	8	18	SMALL OUTLINE				85 Cel		SILICON	50 V		-20 Cel			DUAL	R-PDSO-G18
PBHV8540X,115	Nexperia	NPN	SINGLE	YES	30 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE			100			SILICON	400 V				TIN	SINGLE	R-PSSO-F3	1	COLLECTOR			TO-243AA	e3	30	260	AEC-Q101; IEC-60134
ULN2803AFWG(O,ELM)	Toshiba	NPN	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	8	18	SMALL OUTLINE			1000			SILICON	50 V				TIN SILVER COPPER	DUAL	R-PDSO-G18			Not Qualified	LOGIC LEVEL COMPATIBLE		e1
BC817DS,115	NXP Semiconductors	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.37 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
BC847C-13-F	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.35 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V		-65 Cel		MATTE TIN	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260	AEC-Q101
NTE103	Nte Electronics	NPN	SINGLE	NO	2 MHz	.15 W	.15 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		24			GERMANIUM	16 V					BOTTOM	O-MBCY-W3			Not Qualified		TO-5		NOT SPECIFIED	NOT SPECIFIED
BC857BS,115	NXP Semiconductors	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
BC847BTT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
ULN2803AFWG(5,EL,M)	Toshiba	NPN	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	8	18	SMALL OUTLINE			1000			SILICON	50 V					DUAL	R-PDSO-G18				LOGIC LEVEL COMPATIBLE
SBC847CDW1T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101
BC857BLT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.225 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
BC846-B	Infineon Technologies	NPN	SINGLE	YES	250 MHz	.3 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	65 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e3
BCP56-16,115	NXP Semiconductors	NPN	SINGLE	YES	180 MHz	1.5 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	1.5 W	100	150 Cel		SILICON	80 V				TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260	AEC-Q101; IEC-60134
BC817-25W-7	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	.2 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC846A,215	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel		SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
ZTX653	Diodes Incorporated	NPN	SINGLE	NO	175 MHz		2 A	PLASTIC/EPOXY			WIRE	RECTANGULAR	1	3	IN-LINE				200 Cel		SILICON	100 V				MATTE TIN	SINGLE	R-PSIP-W3	1		Not Qualified			e3	30	260
BC556BTF	Onsemi	PNP	SINGLE	NO	150 MHz	.5 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	65 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC857BS-7-F	Diodes Incorporated	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		220	125 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
MMBT2222ALP4-7B	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.46 W	.6 A	PLASTIC/EPOXY			NO LEAD	RECTANGULAR	1	3	CHIP CARRIER	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	NICKEL PALLADIUM GOLD	BOTTOM	R-PBCC-N3	1	COLLECTOR		HIGH RELIABILITY		e4	30	260	AEC-Q101
MMBTA42-7-F	Diodes Incorporated	NPN	SINGLE	YES	50 MHz		.5 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	.3 W	40	150 Cel	3 pF	SILICON	300 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	MIL-STD-202
JANTX2N2907AUATR	Microchip Technology																									Tin/Lead (Sn/Pb)								e0
BC857C,215	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
SMMBTA92LT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		25	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AF	e3	30	260	AEC-Q101
BC807-40W-7	Diodes Incorporated	PNP	SINGLE	YES	100 MHz	.2 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		170	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC817K40E6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	170 MHz		.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			250			SILICON	45 V				TIN	DUAL	R-PDSO-G3	1					e3			AEC-Q101
SBC856BLT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC857B-7-F	Diodes Incorporated	PNP	SINGLE	YES	200 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC847BS-7-F	Diodes Incorporated	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified	HIGH RELIABILITY		e3	30	260
BC847BM,315	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING		NO LEAD	RECTANGULAR	1	3	CHIP CARRIER	Other Transistors		200	150 Cel		SILICON	45 V				TIN	BOTTOM	R-PBCC-N3	1	COLLECTOR	Not Qualified			e3	30	260	IEC-60134
SBC846BWT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.1 A						1			Other Transistors		200	150 Cel							MATTE TIN			1					e3	30	260
BC807-40LT3G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC847BT116	ROHM	NPN	SINGLE	YES	200 MHz	.35 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.3 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	3 pF	SILICON	45 V				TIN SILVER COPPER	DUAL	R-PDSO-G3	1		Not Qualified			e1	10	260
BC547-C	Secos	NPN	SINGLE	NO	150 MHz		.1 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL			110			SILICON	45 V					BOTTOM	O-PBCY-T3					TO-92		NOT SPECIFIED	NOT SPECIFIED
BC856-B	Infineon Technologies	PNP	SINGLE	YES	250 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			220	150 Cel		SILICON	65 V					DUAL	R-PDSO-G3	1			LOW NOISE
BC856BW,115	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel	5 pF	SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT3904LP-7B	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	1 W	.2 A	PLASTIC/EPOXY		.3 V	NO LEAD	RECTANGULAR	1	3	CHIP CARRIER		1 W	30	150 Cel	4 pF	SILICON	40 V	70 ns	-55 Cel	250 ns	NICKEL PALLADIUM GOLD	BOTTOM	R-PBCC-N3	1	COLLECTOR	Not Qualified	HIGH RELIABILITY		e4	30	260	AEC-Q101
BC547BZL1G	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1		260
BCX56-16,115	NXP Semiconductors	NPN	SINGLE	YES	180 MHz		1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	1	3	SMALL OUTLINE			100	150 Cel		SILICON	80 V				Tin (Sn)	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified		TO-243AA	e3	30	260	AEC-Q101; IEC-60134
ULN2003ADE4	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING	1.6 V	GULL WING	RECTANGULAR	7	16	SMALL OUTLINE						SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC	e4	NOT SPECIFIED	260
SBC847BLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
FMMT493TA	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	.5 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20	150 Cel		SILICON	100 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT4401-7-F	Diodes Incorporated	NPN	SINGLE	YES	250 MHz	.3 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		255 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
BC547BRL1G	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V		-55 Cel		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1	40	260
MMBT2907A-TP	Micro Commercial Components	PNP	SINGLE	YES	200 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	60 V	50 ns		110 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	10	260
BCP56-16HX	Nexperia																									TIN			1					e3	30	260