Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BC846BPN,115	NXP Semiconductors	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		200	150 Cel		SILICON	65 V				Tin (Sn)	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101
BC547ATA	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		110	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC547AT&A	Continental Device India	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		110	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC847BV,115	NXP Semiconductors	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-F6	1		Not Qualified			e3	30	260
MMBT3906VL	Nexperia	PNP	SINGLE	YES	250 MHz		.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel		SILICON	40 V	70 ns	-65 Cel	300 ns	TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
BC847B,235	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.25 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1	COLLECTOR	Not Qualified		TO-236AB	e3	30	260	IEC-60134
BC817.25	Central Semiconductor	NPN	SINGLE	YES	200 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				TIN LEAD	DUAL	R-PDSO-G3			Not Qualified	HIGH CURRENT		e0
BC81725	Zetex Plc	NPN	SINGLE	YES	200 MHz	.33 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				TIN LEAD	DUAL	R-PDSO-G3	1		Not Qualified			e0	10	235
MMBT3904LT3G	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC847BPN,115	NXP Semiconductors	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.4 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
SMMUN2211LT1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.4 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTOR RATIO IS 1	TO-236	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
PMBT2369,215	NXP Semiconductors	NPN	SINGLE	YES	500 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING	.25 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		20	150 Cel	4 pF	SILICON	15 V	10 ns		20 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC807-40-7-F	Diodes Incorporated	PNP	SINGLE	YES	100 MHz	.31 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		170	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
BC846BS,115	NXP Semiconductors	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	65 V				TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101; IEC-60134
2SC4097T106R	ROHM	NPN	SINGLE	YES	250 MHz	.2 W	.5 A	PLASTIC/EPOXY	AMPLIFIER	.4 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		180	150 Cel		SILICON	32 V				TIN SILVER COPPER	DUAL	R-PDSO-G3			Not Qualified			e1
MMBTA56LT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
2N2907AUB	Microchip Technology	PNP	SINGLE	YES		1.16 W	.6 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		NO LEAD	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	200 Cel		SILICON	60 V	45 ns		300 ns	TIN LEAD	DUAL	R-CDSO-N3			Not Qualified			e0
BC847BW-7-F	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC847AE6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	250 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			110	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
BC847C-7-F	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V		-65 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260	AEC-Q101
SMMBTA42LT1G	Onsemi	NPN	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
SMMBT4403LT1G	Onsemi	PNP	SINGLE	YES	200 MHz	.225 W	.6 A	PLASTIC/EPOXY	SWITCHING	.75 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE		.225 W	100	150 Cel	8.5 pF	SILICON	40 V	35 ns	-55 Cel	255 ns	MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
BC807-25,215	NXP Semiconductors	PNP	SINGLE	YES	80 MHz	.35 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC807-40W,115	NXP Semiconductors	PNP	SINGLE	YES	80 MHz	.2 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel	10 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SBC817-40LT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
SMBTA06E6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	100 MHz		.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			100	150 Cel		SILICON	80 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
BC817-40QAZ	NXP Semiconductors	NPN	SINGLE	YES									1			Other Transistors			150 Cel
BC846BDW1T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	65 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
MMBT2907ALT3G	Onsemi	PNP	SINGLE	YES	200 MHz	.3 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC847CDW1T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
SMMBT5401LT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	150 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
PMBT2222A,215	NXP Semiconductors	NPN	SINGLE	YES	300 MHz	.25 W	.6 A	PLASTIC/EPOXY	SWITCHING	1 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel	8 pF	SILICON	40 V	35 ns	-65 Cel	250 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH CURRENT DRIVER	TO-236AB	e3	30	260
BC858B,215	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	30 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC846B,235	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.5 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
2N2219A	Texas Instruments	NPN	SINGLE	NO	300 MHz	.8 W	.8 A	METAL	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	200 Cel		SILICON	40 V	35 ns		285 ns		BOTTOM	O-MBCY-W3		COLLECTOR	Not Qualified		TO-5		NOT SPECIFIED	NOT SPECIFIED
BC847CT-7-F	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
2N3906	Texas Instruments	PNP	SINGLE	NO	250 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		WIRE	ROUND	1	3	CYLINDRICAL	Other Transistors		80	150 Cel		SILICON	40 V	70 ns		300 ns		BOTTOM	O-PBCY-W3			Not Qualified		TO-92		NOT SPECIFIED	NOT SPECIFIED
BC857BE6327HTSA1	Infineon Technologies	PNP	SINGLE	YES	250 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			220	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
SMMBT2222ALT3G	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.6 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		75	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1				TO-236	e3	30	260
BC847BLT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC807-40,215	NXP Semiconductors	PNP	SINGLE	YES	80 MHz	.35 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BC846BPDW1T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		200	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
MMBT2907AT-7-F	Diodes Incorporated	PNP	SINGLE	YES	200 MHz	.15 W	.6 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	60 V	45 ns	-55 Cel	100 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	10	260
MMBT3906WT1G	Onsemi	PNP	SINGLE	YES	250 MHz	.15 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	300 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SMBT3904DW1T1G	Onsemi	NPN		YES	300 MHz	.15 W	.2 A									Other Transistors		100	150 Cel							MATTE TIN			1					e3	30	260
SBC846ALT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
MBT3904DW1T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	300 MHz	.15 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
ZTX651	Diodes Incorporated	NPN	SINGLE	NO	175 MHz	1 W	2 A	PLASTIC/EPOXY			WIRE	RECTANGULAR	1	3	IN-LINE	Other Transistors		100	200 Cel		SILICON	60 V				MATTE TIN	SINGLE	R-PSIP-W3			Not Qualified			e3	30	260