Onsemi - BC547BTF

2N3904 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 70, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A in a cylindrical package shape.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Power Dissipation Ambient: .225 W;

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 6;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

PN2222ABU by Onsemi is a NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 40 and fast turn on/off times (ton: 35ns, toff: 285ns).

NSM4002MR6T1G by Onsemi is a NPN BJT with hFE of 100, IC of 0.5A, and fT of 100MHz. Ideal for surface mount applications in electronics requiring high-speed signal amplification up to 150°C.

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; JEDEC-95 Code: TO-236AB;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;

SBC846BLT1G by Onsemi is a NPN BJT transistor with max VCEsat of 0.6V, hFE of 200, and fT of 100MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance and max operating temp of 150°C.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Terminal Form: GULL WING;

NXP Semiconductors' BC847,215 is a NPN BJT transistor with VCEsat of 0.6V, hFE of 110, and IC of 0.1A. Ideal for switching applications in small outline packages with 3 terminals. Operates at max temp of 150°C and has a transition frequency of 100MHz.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

SBC817-40LT1G by Onsemi is a NPN BJT transistor with 250 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications, it has a max power dissipation of 0.3W and operates up to 150°C. The small outline package with gull wing terminals makes it suitable for surface mount designs.