NXP Semiconductors - MRFE6VP6300HR3

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 17.8 W; Maximum Drain Current (ID): 2.1 A; Maximum Drain Current (Abs) (ID): 2.1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Operating Temperature: 200 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1; Minimum DS Breakdown Voltage: 104 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 648 W; Maximum Drain Current (ID): 40 A; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Case Connection: SOURCE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 648 W; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 40 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 236 W; Maximum Drain Current (Abs) (ID): 14 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Transistor Element Material: SILICON; No. of Elements: 2;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;

STMicroelectronics' PD55015-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, it offers 5A Drain Current and 73W Power Dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and can withstand up to 165°C operating temp.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Transistor Element Material: GALLIUM ARSENIDE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 4; Minimum DS Breakdown Voltage: 125 V; Transistor Element Material: SILICON;

N-CHANNEL; Surface Mount: YES; Highest Frequency Band: KU BAND; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 10 V; Field Effect Transistor Technology: JUNCTION;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);