Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
Wolfspeed |
WIDE BAND HIGH POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
BIPOLAR |
1 |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
7000 MHz |
15000 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
3 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
2 dBm |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
17000 MHz |
26000 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
8 dBm |
COMPONENT |
50 ohm |
105 Cel |
20.2 dB |
-40 Cel |
LOW NOISE |
1 MHz |
1000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
98 mA |
COMPONENT |
4.9 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.2 dB |
-40 Cel |
0 MHz |
500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
5 dBm |
88 mA |
COMPONENT |
3 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
9000 MHz |
18000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
TUNGSTEN NICKEL GOLD |
2000 MHz |
28000 MHz |
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Agilent Technologies |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
13 dBm |
1.5 |
55 mA |
COMPONENT |
6 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-25 Cel |
0 MHz |
1800 MHz |
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|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
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|
M/a-com Technology Solutions |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
130 mA |
COMPONENT |
4 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
23 dB |
-55 Cel |
MATTE TIN |
e3 |
4000 MHz |
11000 MHz |
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|
M/a-com Technology Solutions |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
15 dBm |
COMPONENT |
6 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-55 Cel |
Matte Tin (Sn) |
e3 |
5900 MHz |
9500 MHz |
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|
Wolfspeed |
WIDE BAND HIGH POWER |
5 |
MODULE |
50 ohm |
150 Cel |
13.5 dB |
-40 Cel |
20 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
115 mA |
5 |
LCC12,.2SQ |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
NXP Semiconductors |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BICMOS |
1 |
10 dBm |
5.6 mA |
COMPONENT |
2.7 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9.5 dB |
-40 Cel |
MATTE TIN |
e3 |
100 MHz |
2500 MHz |
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|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
5 |
700 mA |
COMPONENT |
7 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
LOW NOISE |
150 MHz |
960 MHz |
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|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
10 |
GAN |
1 |
30 dBm |
3 |
650 mA |
MODULE |
-2.6,28 |
50 ohm |
85 Cel |
28 dB |
-40 Cel |
8000 MHz |
11000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
80 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
2000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
10 dBm |
75 mA |
COMPONENT |
3 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
6000 MHz |
20000 MHz |
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|
Qorvo |
WIDE BAND HIGH POWER |
28 dBm |
COMPONENT |
50 ohm |
85 Cel |
30 dB |
-40 Cel |
GOLD |
HIGH RELIABILITY |
e4 |
4500 MHz |
7000 MHz |
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L-3 Narda-miteq |
WIDE BAND MEDIUM POWER |
2 |
COAXIAL |
15 dB |
SMA-F |
2000 MHz |
4000 MHz |
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|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
AEC-Q100 |
1 |
14.4 mA |
1.8 |
SOLCC6,.04,20 |
RF/Microwave Amplifiers |
125 Cel |
-40 Cel |
TIN |
e3 |
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|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
CERAMIC |
E-PHEMT |
1 |
16 dBm |
1.19 |
94 mA |
COMPONENT |
6 |
50 ohm |
125 Cel |
18.5 dB |
-40 Cel |
HIGH RELIABILITY |
500 MHz |
8000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BICMOS |
1 |
COMPONENT |
1.8/3.3 |
BGA4,2X2,16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.1 dB |
-40 Cel |
TIN SILVER COPPER NICKEL |
e2 |
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|
Broadcom |
WIDE BAND LOW POWER |
15 dBm |
2 |
COMPONENT |
20 dB |
Matte Tin (Sn) |
e3 |
0 MHz |
3500 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
MOS |
1 |
20 dBm |
10 |
COMPONENT |
28 |
FLNG,.67"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
33 dB |
TIN |
IT CAN ALSO OPERATE AT 728 TO 768 MHZ |
e3 |
920 MHz |
960 MHz |
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|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
10 |
1 |
33 dBm |
3 |
MODULE |
50 ohm |
85 Cel |
26 dB |
-40 Cel |
7900 MHz |
11000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.3 dB |
-40 Cel |
HIGH RELIABILITY |
0 MHz |
6000 MHz |
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|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
-10 dBm |
33 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
24 dB |
-40 Cel |
Tin (Sn) |
LOW NOISE |
e3 |
100 MHz |
3000 MHz |
|||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
0 MHz |
6000 MHz |
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Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
1.4 |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
1700 MHz |
2500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
125 Cel |
11 dB |
-55 Cel |
10 MHz |
10000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
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Mitsubishi Electric |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
2.8 |
MODULE |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
110 Cel |
-30 Cel |
156 MHz |
160 MHz |
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|
M/a-com Technology Solutions |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
1 |
10 dBm |
1.58 |
140 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
5000 MHz |
20000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
13 dBm |
1.2 |
COMPONENT |
50 ohm |
23.5 dB |
Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
500 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
30 dBm |
10 |
COMPONENT |
50 ohm |
24 dB |
Matte Tin (Sn) |
e3 |
2500 MHz |
2700 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
39 mA |
COMPONENT |
2.9 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5000 MHz |
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|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
39 mA |
COMPONENT |
2.9 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5000 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
E-PHEMT |
1 |
33 dBm |
1.29 |
150 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
105 Cel |
15 dB |
-40 Cel |
LOW NOISE, TTL COMPATIBLE |
500 MHz |
6000 MHz |
|||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
NICKEL PALLADIUM GOLD |
e4 |
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|
Qorvo |
WIDE BAND LOW POWER |
|||||||||||||||||||||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
2.3 |
COMPONENT |
3.5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.7 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
7000 MHz |
||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
13 dBm |
2.3 |
COMPONENT |
3.5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.7 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
HIGH RELIABILITY |
e2 |
0 MHz |
7000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
115 mA |
COMPONENT |
5 |
LCC8,.2SQ,40 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
7000 MHz |
15500 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
77 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
14.6 dB |
Tin (Sn) |
e3 |
40 MHz |
2600 MHz |
||||||||
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
12 dBm |
110 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
18.3 dB |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
|||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
NICKEL PALLADIUM GOLD |
e4 |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.