Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Qorvo |
WIDE BAND MEDIUM POWER |
30 dBm |
COMPONENT |
50 ohm |
85 Cel |
19.4 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
50 MHz |
1500 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.2 |
90 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
21 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3400 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
CERAMIC |
HYBRID |
1 |
13 dBm |
1.24 |
130 mA |
COMPONENT |
5 |
50 ohm |
85 Cel |
14.3 dB |
-45 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
HIGH RELIABILITY |
e4 |
0 MHz |
7000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
400 mA |
COMPONENT |
10 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-55 Cel |
Matte Tin (Sn) |
e3 |
200 MHz |
22000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
400 mA |
10 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
||||||||||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
HYBRID |
13 dBm |
1.7 |
35 mA |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-20 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
0 MHz |
2000 MHz |
||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
13 dBm |
1.7 |
MODULE |
50 ohm |
85 Cel |
8 dB |
-20 Cel |
TIN SILVER OVER NICKEL |
LOW NOISE |
e2 |
0 MHz |
2000 MHz |
|||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
24 dBm |
117 mA |
COMPONENT |
5 |
TO-243 |
RF/Microwave Amplifiers |
8 dB |
Tin (Sn) |
e3 |
2000 MHz |
6000 MHz |
||||||||||
|
Infineon Technologies |
WIDE BAND HIGH POWER |
42 dBm |
10 |
COMPONENT |
50 ohm |
29 dB |
Tin (Sn) |
e3 |
700 MHz |
1000 MHz |
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Microsemi |
PLASTIC/EPOXY |
1 |
50 |
MODULE(UNSPEC) |
RF/Microwave Amplifiers |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 dBm |
1.5 |
16 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3500 MHz |
||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
26 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
||||||||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
150 Cel |
16.3 dB |
-65 Cel |
Tin (Sn) |
e3 |
0 MHz |
2800 MHz |
|||||||||||||||
|
Mini-circuits |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
CERAMIC |
E-PHEMT |
1 |
25 dBm |
1.18 |
186 mA |
COMPONENT |
5 |
50 ohm |
105 Cel |
28.1 dB |
-55 Cel |
HIGH RELIABILITY |
400 MHz |
2200 MHz |
||||||||
|
Wolfspeed |
WIDE BAND HIGH POWER |
|||||||||||||||||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
15 dBm |
10 |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
HIGH RELIABILITY |
e4 |
0 MHz |
4000 MHz |
|||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
COMPONENT |
3/8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
0 MHz |
15000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
LOW NOISE |
e4 |
10000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
-5 dBm |
90 mA |
COMPONENT |
4 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
22 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
17000 MHz |
27000 MHz |
||||||
Mitsubishi Electric |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
4 |
MODULE |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
110 Cel |
-30 Cel |
135 MHz |
145 MHz |
|||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
17.5 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
0 MHz |
28000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
128 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
19 dB |
Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
2000 MHz |
|||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
20 dBm |
2 |
COMPONENT |
5 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-45 Cel |
0 MHz |
12000 MHz |
||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
20 dBm |
2 |
COMPONENT |
5 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-45 Cel |
0 MHz |
12000 MHz |
||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
28 dBm |
90 mA |
COMPONENT |
3.3 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.6 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
LOW NOISE |
e2 |
50 MHz |
6000 MHz |
||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAN |
1 |
21 dBm |
4 |
COMPONENT |
LCC24,.2SQ,25 |
50 ohm |
34.2 dB |
8000 MHz |
12000 MHz |
||||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAN |
1 |
21 dBm |
4 |
COMPONENT |
LCC24,.2SQ,25 |
50 ohm |
34.2 dB |
8000 MHz |
12000 MHz |
||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
16 dBm |
COMPONENT |
50 ohm |
105 Cel |
15.6 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
0 MHz |
4500 MHz |
|||||||||||||||
Rf Micro Devices |
WIDE BAND LOW POWER |
5 dBm |
1.2 |
COMPONENT |
50 ohm |
85 Cel |
15.5 dB |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
3600 MHz |
|||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
39 mA |
COMPONENT |
2.6 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
0 MHz |
5500 MHz |
||||||||
|
Wolfspeed |
WIDE BAND HIGH POWER |
|||||||||||||||||||||||||
|
Sumitomo Electric Industries |
WIDE BAND MEDIUM POWER |
26 dBm |
COMPONENT |
50 ohm |
85 Cel |
21 dB |
-40 Cel |
HIGH RELIABILITY |
3400 MHz |
5000 MHz |
||||||||||||||||
|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.2 |
60 mA |
COMPONENT |
4 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-45 Cel |
Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier |
e2 |
0 MHz |
1500 MHz |
||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.2 |
60 mA |
COMPONENT |
4 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
1500 MHz |
|||||||
|
Sumitomo Electric Industries |
NARROW BAND HIGH POWER |
26 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
HIGH RELIABILITY |
13750 MHz |
14500 MHz |
|||||||||||||||||
|
Mini-circuits |
WIDE BAND MEDIUM POWER |
20 dBm |
1.22 |
COMPONENT |
50 ohm |
9.5 dB |
Matte Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
1000 MHz |
|||||||||||||||
Mini-circuits |
WIDE BAND MEDIUM POWER |
20 dBm |
1.22 |
COMPONENT |
50 ohm |
9.5 dB |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
50 MHz |
1000 MHz |
||||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
3000 MHz |
4000 MHz |
||||||||
|
Analog Devices |
NARROW BAND MEDIUM POWER |
17 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
2200 MHz |
2800 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
17 dBm |
135 mA |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
4500 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
17 dBm |
135 mA |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
4500 MHz |
||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
4000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
4000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
SL,4GW-LD,.085CIR |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
SL,4GW-LD,.085CIR |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
82 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
23 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
4000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
82 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
4000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.