Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
Mini-circuits |
WIDE BAND LOW POWER |
26 dBm |
COMPONENT |
50 ohm |
85 Cel |
14.7 dB |
-40 Cel |
TIN SILVER OVER NICKEL |
HIGH RELIABILITY |
e2 |
50 MHz |
4000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
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|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
12 |
GAN |
1 |
30 dBm |
3 |
600 mA |
COMPONENT |
-1.9,24 |
DIE OR CHIP |
50 ohm |
23.1 dB |
7900 MHz |
11000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
65 mA |
COMPONENT |
3/5 |
SOLCC8,.11,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
400 MHz |
4000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
0 dBm |
COMPONENT |
5 |
TSOP8,.3,38 |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
2 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
40 MHz |
960 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
PHEMT |
1 |
300 mA |
COMPONENT |
10 |
LCC32,.2SQ,20 |
50 ohm |
11 dB |
Matte Tin (Sn) |
e3 |
28000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
6000 MHz |
18000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
2 |
COMPONENT |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
7100 MHz |
7900 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
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|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
23 dBm |
105 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
MATTE TIN |
LOW NOISE |
e3 |
500 MHz |
2800 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
3000 MHz |
4500 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PHEMT |
1 |
25 dBm |
1.29 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
10 MHz |
9000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
25 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
0 MHz |
30000 MHz |
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Maxim Integrated |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
1.5 |
COMPONENT |
3/5 |
SSOP16,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
23.9 dB |
-40 Cel |
TIN LEAD |
IT CAN ALSO OPERATE AT 800 TO 1000 MHZ |
e0 |
800 MHz |
1000 MHz |
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|
Analog Devices |
NARROW BAND MEDIUM POWER |
10 dBm |
1.5 |
COMPONENT |
50 ohm |
85 Cel |
23.9 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
IT CAN ALSO OPERATE AT 800 TO 1000 MHZ |
e3 |
800 MHz |
1000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
2 |
48 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
6.9 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
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|
Infineon Technologies |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
150 Cel |
17.5 dB |
-65 Cel |
TIN |
e3 |
0 MHz |
2400 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
16 dBm |
COMPONENT |
50 ohm |
105 Cel |
19.9 dB |
-40 Cel |
500 MHz |
8000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
84 mA |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
2 |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
6800 MHz |
7400 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
MOS |
2 |
38 dBm |
10 |
COMPONENT |
28 |
LCC24,.3SQ,32 |
50 ohm |
RF/Microwave Amplifiers |
21.5 dB |
MATTE TIN |
e3 |
100 MHz |
1000 MHz |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
22 dBm |
90 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
105 Cel |
18.5 dB |
-40 Cel |
700 MHz |
6000 MHz |
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|
M/a-com Technology Solutions |
WIDE BAND MEDIUM POWER |
24 dBm |
COMPONENT |
85 Cel |
10.1 dB |
-40 Cel |
Matte Tin (Sn) |
TAPE AND REEL |
e3 |
0 MHz |
6000 MHz |
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|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
92 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
6000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
92 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.5 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
50 MHz |
6000 MHz |
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|
Wolfspeed |
NARROW BAND HIGH POWER |
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|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
MATTE TIN |
e3 |
4000 MHz |
20000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
22 dBm |
1.54 |
100 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
17.5 dB |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
100 MHz |
6000 MHz |
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|
Wolfspeed |
WIDE BAND HIGH POWER |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
1 |
COMPONENT |
5 |
LCC24,.16SQ,20 |
85 Cel |
0 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
0 MHz |
100 MHz |
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|
Qorvo |
WIDE BAND HIGH POWER |
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|
Qorvo |
WIDE BAND HIGH POWER |
33 dBm |
10 |
COMPONENT |
50 ohm |
19 dB |
GOLD OVER NICKEL |
e4 |
30 MHz |
2500 MHz |
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|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
GAAS |
1 |
12 dBm |
50 mA |
COMPONENT |
5 |
DIE OR CHIP |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-55 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
20000 MHz |
40000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20.4 dB |
-40 Cel |
MATTE TIN |
HIGH RELIABILITY |
e3 |
0 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
114 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
GOLD OVER NICKEL |
SMA |
e4 |
5000 MHz |
20000 MHz |
|||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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Motorola |
WIDE BAND LOW POWER |
3 |
METAL |
HYBRID |
20 dBm |
3 |
100 mA |
MODULE |
CAN3/4,.2 |
50 ohm |
RF/Microwave Amplifiers |
80 Cel |
-25 Cel |
Tin/Lead (Sn/Pb) |
e0 |
.1 MHz |
1000 MHz |
||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
29 |
GAN |
1 |
18 dBm |
3 |
650 mA |
COMPONENT |
28 |
50 ohm |
31.4 dB |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
1000 MHz |
8000 MHz |
||||||||||
|
Qorvo |
WIDE BAND HIGH POWER |
28 dBm |
COMPONENT |
50 ohm |
85 Cel |
30 dB |
-40 Cel |
Gold (Au) |
HIGH RELIABILITY |
e4 |
4500 MHz |
7000 MHz |
||||||||||||||
|
Infineon Technologies |
NARROW BAND MEDIUM POWER |
-10 dBm |
COMPONENT |
50 ohm |
150 Cel |
18.5 dB |
-65 Cel |
TIN |
e3 |
100 MHz |
1800 MHz |
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|
Texas Instruments |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
3 |
85 Cel |
14.1 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
2400 MHz |
2483.5 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
5000 MHz |
20000 MHz |
|||||||
|
NXP Semiconductors |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
135 mA |
8 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
10 MHz |
10000 MHz |
|||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
2 |
51 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE, HIGH RELIABILITY |
e3 |
100 MHz |
6000 MHz |
||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
12 dBm |
COMPONENT |
50 ohm |
19.3 dB |
MATTE TIN |
e3 |
40 MHz |
3600 MHz |
|||||||||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
HYBRID |
1 |
13 dBm |
10 |
2400 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
33 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
150 MHz |
960 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.