RF & Microwave Amplifiers

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

PGA-103+

Mini-circuits

WIDE BAND LOW POWER

26 dBm

COMPONENT

50 ohm

85 Cel

14.7 dB

-40 Cel

TIN SILVER OVER NICKEL

HIGH RELIABILITY

e2

50 MHz

4000 MHz

CMD328K3

Qorvo

WIDE BAND LOW POWER

QPA1010D

Qorvo

WIDE BAND HIGH POWER

SURFACE MOUNT

12

GAN

1

30 dBm

3

600 mA

COMPONENT

-1.9,24

DIE OR CHIP

50 ohm

23.1 dB

7900 MHz

11000 MHz

ADL5521ACPZ-R7

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

20 dBm

65 mA

COMPONENT

3/5

SOLCC8,.11,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

MATTE TIN

LOW NOISE

e3

400 MHz

4000 MHz

HMC549MS8G

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

0 dBm

COMPONENT

5

TSOP8,.3,38

75 ohm

RF/Microwave Amplifiers

85 Cel

2 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

40 MHz

960 MHz

HMC994ALP5ETR

Analog Devices

WIDE BAND MEDIUM POWER

HMC994ALP5E

Analog Devices

WIDE BAND MEDIUM POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

PHEMT

1

300 mA

COMPONENT

10

LCC32,.2SQ,20

50 ohm

11 dB

Matte Tin (Sn)

e3

28000 MHz

HMC441LC3BTR-R5

Analog Devices

WIDE BAND LOW POWER

15 dBm

COMPONENT

50 ohm

85 Cel

10 dB

-40 Cel

GOLD OVER NICKEL

e4

6000 MHz

18000 MHz

HMC532LP4E

Analog Devices

WIDE BAND LOW POWER

2

COMPONENT

85 Cel

-40 Cel

MATTE TIN

e3

7100 MHz

7900 MHz

TSS-53LNB3+

Mini-circuits

WIDE BAND LOW POWER

MMG15241HT1

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

23 dBm

105 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

14 dB

MATTE TIN

LOW NOISE

e3

500 MHz

2800 MHz

HMC326MS8GE

Analog Devices

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

15 dBm

COMPONENT

5

TSSOP8,.19

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

3000 MHz

4500 MHz

HMC8413LP2FETR

Analog Devices

WIDE BAND MEDIUM POWER

SURFACE MOUNT

6

PHEMT

1

25 dBm

1.29

COMPONENT

5

SOLCC6,.08,25

50 ohm

85 Cel

17 dB

-40 Cel

10 MHz

9000 MHz

HMC994A

Analog Devices

WIDE BAND MEDIUM POWER

25 dBm

7

COMPONENT

50 ohm

85 Cel

12.5 dB

-55 Cel

0 MHz

30000 MHz

MAX2232EEE

Maxim Integrated

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

10 dBm

1.5

COMPONENT

3/5

SSOP16,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

23.9 dB

-40 Cel

TIN LEAD

IT CAN ALSO OPERATE AT 800 TO 1000 MHZ

e0

800 MHz

1000 MHz

MAX2232EEE+

Analog Devices

NARROW BAND MEDIUM POWER

10 dBm

1.5

COMPONENT

50 ohm

85 Cel

23.9 dB

-40 Cel

Matte Tin (Sn) - annealed

IT CAN ALSO OPERATE AT 800 TO 1000 MHZ

e3

800 MHz

1000 MHz

MGA-61563-BLKG

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

18 dBm

2

48 mA

COMPONENT

3/5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

6.9 dB

Matte Tin (Sn)

e3

100 MHz

6000 MHz

BGA614H6327XTSA1

Infineon Technologies

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

150 Cel

17.5 dB

-65 Cel

TIN

e3

0 MHz

2400 MHz

PMA3-83LN+

Mini-circuits

WIDE BAND LOW POWER

16 dBm

COMPONENT

50 ohm

105 Cel

19.9 dB

-40 Cel

500 MHz

8000 MHz

HMC462LP5ETR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAAS

1

84 mA

5

LCC32,.2SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

e3

HMC505LP4E

Analog Devices

NARROW BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

BIPOLAR

1

2

COMPONENT

3

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

MATTE TIN

LOW NOISE

e3

6800 MHz

7400 MHz

MW7IC008NT1

NXP Semiconductors

WIDE BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

MOS

2

38 dBm

10

COMPONENT

28

LCC24,.3SQ,32

50 ohm

RF/Microwave Amplifiers

21.5 dB

MATTE TIN

e3

100 MHz

1000 MHz

TQP3M9037

Qorvo

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

22 dBm

90 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

RF/Microwave Amplifiers

105 Cel

18.5 dB

-40 Cel

700 MHz

6000 MHz

XF1001-SC-0G0T

M/a-com Technology Solutions

WIDE BAND MEDIUM POWER

24 dBm

COMPONENT

85 Cel

10.1 dB

-40 Cel

Matte Tin (Sn)

TAPE AND REEL

e3

0 MHz

6000 MHz

SBB-4089Z

Sirenza Microdevices

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

GAAS

1

12 dBm

92 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

14 dB

-40 Cel

Matte Tin (Sn)

e3

50 MHz

6000 MHz

SBB4089Z

Qorvo

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

GAAS

1

24 dBm

92 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

13.5 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

50 MHz

6000 MHz

CMPA2060035F1

Wolfspeed

NARROW BAND HIGH POWER

MAAM-011101-TR1000

M/a-com Technology Solutions

WIDE BAND LOW POWER

23 dBm

COMPONENT

50 ohm

85 Cel

17 dB

-40 Cel

MATTE TIN

e3

4000 MHz

20000 MHz

QPL9547TR7

Qorvo

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

22 dBm

1.54

100 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

17.5 dB

Nickel/Palladium/Gold (Ni/Pd/Au)

e4

100 MHz

6000 MHz

CMPA801B030S

Wolfspeed

WIDE BAND HIGH POWER

HMC960LP4E

Analog Devices

WIDE BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

1

COMPONENT

5

LCC24,.16SQ,20

85 Cel

0 dB

-40 Cel

MATTE TIN

LOW NOISE

e3

0 MHz

100 MHz

TGA2214-CP

Qorvo

WIDE BAND HIGH POWER

TGA2237-SM

Qorvo

WIDE BAND HIGH POWER

33 dBm

10

COMPONENT

50 ohm

19 dB

GOLD OVER NICKEL

e4

30 MHz

2500 MHz

XL1000-BD-000V

M/a-com Technology Solutions

WIDE BAND LOW POWER

GAAS

1

12 dBm

50 mA

COMPONENT

5

DIE OR CHIP

RF/Microwave Amplifiers

85 Cel

12 dB

-55 Cel

Matte Tin (Sn)

LOW NOISE

e3

20000 MHz

40000 MHz

AG303-86G

Qorvo

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

COMPONENT

5

SL,4GW-LD,.085CIR

50 ohm

RF/Microwave Amplifiers

85 Cel

20.4 dB

-40 Cel

MATTE TIN

HIGH RELIABILITY

e3

0 MHz

6000 MHz

HMC451LC3

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

10 dBm

114 mA

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

14 dB

-40 Cel

GOLD OVER NICKEL

SMA

e4

5000 MHz

20000 MHz

HMC549MS8GTR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

5

TSSOP8,.19

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

MWA330

Motorola

WIDE BAND LOW POWER

3

METAL

HYBRID

20 dBm

3

100 mA

MODULE

CAN3/4,.2

50 ohm

RF/Microwave Amplifiers

80 Cel

-25 Cel

Tin/Lead (Sn/Pb)

e0

.1 MHz

1000 MHz

QPA1003P

Qorvo

WIDE BAND HIGH POWER

SURFACE MOUNT

29

GAN

1

18 dBm

3

650 mA

COMPONENT

28

50 ohm

31.4 dB

Gold (Au) - with Nickel (Ni) barrier

e4

1000 MHz

8000 MHz

QPA1019TR7

Qorvo

WIDE BAND HIGH POWER

28 dBm

COMPONENT

50 ohm

85 Cel

30 dB

-40 Cel

Gold (Au)

HIGH RELIABILITY

e4

4500 MHz

7000 MHz

BGA427H6327XTSA1

Infineon Technologies

NARROW BAND MEDIUM POWER

-10 dBm

COMPONENT

50 ohm

150 Cel

18.5 dB

-65 Cel

TIN

e3

100 MHz

1800 MHz

CC2590RGVR

Texas Instruments

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

10 dBm

COMPONENT

3

85 Cel

14.1 dB

-40 Cel

NICKEL PALLADIUM GOLD

LOW NOISE

e4

2400 MHz

2483.5 MHz

HMC634LC4

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

10 dBm

COMPONENT

5

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

17 dB

-40 Cel

GOLD OVER NICKEL

e4

5000 MHz

20000 MHz

BGA3018,115

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

135 mA

8

TO-243

RF/Microwave Amplifiers

85 Cel

-40 Cel

TIN

e3

HMC8411LP2FE

Analog Devices

WIDE BAND LOW POWER

20 dBm

COMPONENT

50 ohm

85 Cel

11 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

10 MHz

10000 MHz

MGA-81563-TR1G

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

13 dBm

2

51 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

Matte Tin (Sn)

LOW NOISE, HIGH RELIABILITY

e3

100 MHz

6000 MHz

MMG3002NT1

NXP Semiconductors

WIDE BAND LOW POWER

12 dBm

COMPONENT

50 ohm

19.3 dB

MATTE TIN

e3

40 MHz

3600 MHz

RF5110GSR

Qorvo

WIDE BAND MEDIUM POWER

SURFACE MOUNT

16

HYBRID

1

13 dBm

10

2400 mA

COMPONENT

3.5

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

33 dB

-40 Cel

Matte Tin (Sn)

e3

150 MHz

960 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.