Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
Analog Devices |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
42 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
0 MHz |
700 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
6000 MHz |
26500 MHz |
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|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
12 dBm |
5 |
COMPONENT |
3.6 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
31 dB |
-40 Cel |
IT CAN ALSO OPERATE AT 100 TO 1000 MHZ |
433 MHz |
470 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
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Analog Devices |
WIDE BAND LOW POWER |
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|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
1.6 |
COMPONENT |
3.5 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
15.5 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
2500 MHz |
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|
TE Connectivity |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
11 mA |
3/5 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.2 |
101 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8.8 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
100 MHz |
6000 MHz |
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|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
39 mA |
COMPONENT |
2.6 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5500 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
39 mA |
COMPONENT |
2.6 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
0 MHz |
5500 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.4 |
43 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3500 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
MATTE TIN |
e3 |
6000 MHz |
18000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
1 |
25 dBm |
1.375 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
400 MHz |
11000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
25 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
200 MHz |
22000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
18 |
1 |
33 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
2000 MHz |
20000 MHz |
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|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
40 MHz |
6000 MHz |
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|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
1 |
25 |
COMPONENT |
7.5 |
LCC24,.16SQ,20 |
50 ohm |
150 Cel |
31.2 dB |
-40 Cel |
TIN |
e3 |
1.8 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
18 dBm |
6 |
150 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
31 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
2700 MHz |
3800 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
18 dBm |
6 |
150 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
31 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
2700 MHz |
3800 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
70 Cel |
15 dB |
-55 Cel |
GOLD OVER NICKEL |
e4 |
18000 MHz |
40000 MHz |
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|
M/a-com Technology Solutions |
WIDE BAND HIGH POWER |
24 dBm |
MODULE |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
HIGH RELIABILITY |
500 MHz |
3000 MHz |
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|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
20 dBm |
2.5 |
COMPONENT |
3.9 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-45 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
12000 MHz |
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|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
7 |
GAN |
1 |
25 dBm |
4 |
2000 mA |
COMPONENT |
22 |
DIE OR CHIP |
50 ohm |
85 Cel |
34.4 dB |
-40 Cel |
4500 MHz |
7000 MHz |
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|
Qorvo |
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|
Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
10 |
CERAMIC |
GAN |
1 |
34 dBm |
6 |
COMPONENT |
28 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
2000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
GOLD OVER NICKEL |
POWER AMPLIFIER WITH LNA |
e4 |
17000 MHz |
24000 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
PHEMT |
1 |
12 dBm |
1.22 |
90 mA |
COMPONENT |
6 |
50 ohm |
85 Cel |
20.3 dB |
-40 Cel |
50 MHz |
10000 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
TIN |
HIGH RELIABILITY |
e3 |
50 MHz |
4000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.4 |
43 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3500 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
71 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
2300 MHz |
4000 MHz |
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Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
20 mA |
COMPONENT |
3.5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
800 MHz |
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|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
12 dBm |
5 |
COMPONENT |
3.6 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
31 dB |
-40 Cel |
IT CAN ALSO OPERATE AT 100 TO 1000 MHZ |
433 MHz |
470 MHz |
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|
Wolfspeed |
NARROW BAND HIGH POWER |
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|
Wolfspeed |
WIDE BAND HIGH POWER |
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Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.3 |
65 mA |
COMPONENT |
4.2 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
4000 MHz |
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|
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.3 |
65 mA |
COMPONENT |
4.2 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
e2 |
0 MHz |
4000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
COMPONENT |
3/8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
15000 MHz |
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Mitsubishi Electric |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
MODULE |
5,12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
110 Cel |
-30 Cel |
135 MHz |
175 MHz |
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|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
1.2 |
39 mA |
COMPONENT |
3.2 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5000 MHz |
|||||
|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
1.8 |
83 mA |
COMPONENT |
5.1 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18.4 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
3500 MHz |
|||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
39 mA |
COMPONENT |
3.2 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19.5 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
0 MHz |
5000 MHz |
|||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
83 mA |
COMPONENT |
5.1 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18.4 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
3500 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
19 dB |
-40 Cel |
MATTE TIN |
e3 |
1000 MHz |
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|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
-10 dBm |
33 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
24 dB |
-40 Cel |
Tin (Sn) |
LOW NOISE |
e3 |
100 MHz |
3000 MHz |
|||||
|
Analog Devices |
WIDE BAND LOW POWER |
-5 dBm |
COMPONENT |
50 ohm |
85 Cel |
23 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
24000 MHz |
28000 MHz |
|||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
18000 MHz |
31500 MHz |
|||||||||||||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
22.5 dBm |
1.67 |
75 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
30 MHz |
8000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.