RF & Microwave Amplifiers

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

HMC799LP3E

Analog Devices

WIDE BAND LOW POWER

COMPONENT

50 ohm

85 Cel

42 dB

-40 Cel

MATTE TIN

LOW NOISE

e3

0 MHz

700 MHz

HMC963LC4

Analog Devices

WIDE BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

16.5 dB

-40 Cel

GOLD OVER NICKEL

e4

6000 MHz

26500 MHz

RF6886TR13

Qorvo

WIDE BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

BIPOLAR

1

12 dBm

5

COMPONENT

3.6

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

31 dB

-40 Cel

IT CAN ALSO OPERATE AT 100 TO 1000 MHZ

433 MHz

470 MHz

ADL8142ACPZN-CSL

Analog Devices

WIDE BAND LOW POWER

HMC907ALP5E

Analog Devices

WIDE BAND LOW POWER

ADA-4643-BLKG

Broadcom

WIDE BAND LOW POWER

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

1.6

COMPONENT

3.5

SOT-343R

50 ohm

RF/Microwave Amplifiers

15.5 dB

Matte Tin (Sn)

HIGH RELIABILITY

e3

0 MHz

2500 MHz

MAALSS0044TR-3000

TE Connectivity

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

11 mA

3/5

SOP8,.25

RF/Microwave Amplifiers

85 Cel

-40 Cel

MGA-82563-TR1G

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

13 dBm

1.2

101 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

8.8 dB

-40 Cel

Matte Tin (Sn)

LOW NOISE

e3

100 MHz

6000 MHz

SGA-3363Z

Sirenza Microdevices

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

39 mA

COMPONENT

2.6

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

15.5 dB

-40 Cel

Matte Tin (Sn)

e3

0 MHz

5500 MHz

SGA3363Z

Qorvo

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

39 mA

COMPONENT

2.6

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

15.5 dB

-40 Cel

0 MHz

5500 MHz

ABA-52563-BLKG

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

20 dBm

1.4

43 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

20 dB

Matte Tin (Sn)

HIGH RELIABILITY

e3

0 MHz

3500 MHz

CMD264P3

Qorvo

WIDE BAND LOW POWER

20 dBm

COMPONENT

50 ohm

85 Cel

18 dB

-40 Cel

MATTE TIN

e3

6000 MHz

18000 MHz

HMC8412LP2FE

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

6

1

25 dBm

1.375

COMPONENT

5

SOLCC6,.08,25

50 ohm

85 Cel

12 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

400 MHz

11000 MHz

HMC907A

Analog Devices

WIDE BAND MEDIUM POWER

25 dBm

7

COMPONENT

50 ohm

85 Cel

12.5 dB

-55 Cel

200 MHz

22000 MHz

QPM1000

Qorvo

WIDE BAND LOW POWER

SURFACE MOUNT

18

1

33 dBm

COMPONENT

5

50 ohm

85 Cel

17 dB

-40 Cel

2000 MHz

20000 MHz

TRF37A75IDSGT

Texas Instruments

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

10 dBm

COMPONENT

5

50 ohm

85 Cel

12 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

40 MHz

6000 MHz

AFIC901NT1

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

1

25

COMPONENT

7.5

LCC24,.16SQ,20

50 ohm

150 Cel

31.2 dB

-40 Cel

TIN

e3

1.8 MHz

1000 MHz

HMC1114PM5E

Analog Devices

WIDE BAND HIGH POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAN

1

18 dBm

6

150 mA

COMPONENT

28

LCC32,.2SQ,20

50 ohm

85 Cel

31 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

2700 MHz

3800 MHz

HMC1114PM5ETR

Analog Devices

WIDE BAND HIGH POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

GAN

1

18 dBm

6

150 mA

COMPONENT

28

LCC32,.2SQ,20

50 ohm

85 Cel

31 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

2700 MHz

3800 MHz

HMC635LC4

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

15 dBm

COMPONENT

5

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

70 Cel

15 dB

-55 Cel

GOLD OVER NICKEL

e4

18000 MHz

40000 MHz

MAAP-010168-000000

M/a-com Technology Solutions

WIDE BAND HIGH POWER

24 dBm

MODULE

50 ohm

85 Cel

19 dB

-40 Cel

HIGH RELIABILITY

500 MHz

3000 MHz

NBB-300-T1

Qorvo

WIDE BAND LOW POWER

SURFACE MOUNT

4

CERAMIC

BIPOLAR

1

20 dBm

2.5

COMPONENT

3.9

SL,4LEAD,.07SQ

50 ohm

RF/Microwave Amplifiers

85 Cel

9 dB

-45 Cel

Matte Tin (Sn)

e3

0 MHz

12000 MHz

QPA1019D

Qorvo

WIDE BAND HIGH POWER

SURFACE MOUNT

7

GAN

1

25 dBm

4

2000 mA

COMPONENT

22

DIE OR CHIP

50 ohm

85 Cel

34.4 dB

-40 Cel

4500 MHz

7000 MHz

QPA9419

Qorvo

ADL8105ACPZN-R7

Analog Devices

WIDE BAND LOW POWER

HMC1087F10

Analog Devices

WIDE BAND HIGH POWER

SURFACE MOUNT

10

CERAMIC

GAN

1

34 dBm

6

COMPONENT

28

50 ohm

85 Cel

11 dB

-40 Cel

2000 MHz

20000 MHz

HMC498LC4

Analog Devices

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

10 dBm

COMPONENT

5

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-40 Cel

GOLD OVER NICKEL

POWER AMPLIFIER WITH LNA

e4

17000 MHz

24000 MHz

PMA3-14LN+

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

PHEMT

1

12 dBm

1.22

90 mA

COMPONENT

6

50 ohm

85 Cel

20.3 dB

-40 Cel

50 MHz

10000 MHz

PSA4-5043+

Mini-circuits

WIDE BAND LOW POWER

23 dBm

COMPONENT

50 ohm

85 Cel

16.5 dB

-40 Cel

TIN

HIGH RELIABILITY

e3

50 MHz

4000 MHz

ABA-52563-TR1G

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

20 dBm

1.4

43 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

20 dB

Matte Tin (Sn)

HIGH RELIABILITY

e3

0 MHz

3500 MHz

MGA-635P8-TR1G

Broadcom

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

20 dBm

71 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

RF/Microwave Amplifiers

85 Cel

16.5 dB

-40 Cel

Tin (Sn)

e3

2300 MHz

4000 MHz

MSA-0686-BLK

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

13 dBm

1.7

20 mA

COMPONENT

3.5

SL,4GW-LD,.085CIR

50 ohm

RF/Microwave Amplifiers

16.5 dB

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

0 MHz

800 MHz

RF6886SR

Qorvo

WIDE BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

BIPOLAR

1

12 dBm

5

COMPONENT

3.6

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

31 dB

-40 Cel

IT CAN ALSO OPERATE AT 100 TO 1000 MHZ

433 MHz

470 MHz

CMPA2735075F1

Wolfspeed

NARROW BAND HIGH POWER

CMPA601C025F

Wolfspeed

WIDE BAND HIGH POWER

ERA-5SM

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

1

13 dBm

1.3

65 mA

COMPONENT

4.2

SL,4GW-LD,.085CIR

50 ohm

RF/Microwave Amplifiers

85 Cel

16 dB

-45 Cel

Tin/Lead (Sn/Pb)

e0

0 MHz

4000 MHz

ERA-5SM+

Mini-circuits

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

1

13 dBm

1.3

65 mA

COMPONENT

4.2

SL,4GW-LD,.085CIR

50 ohm

RF/Microwave Amplifiers

85 Cel

12 dB

-45 Cel

TIN SILVER OVER NICKEL

e2

0 MHz

4000 MHz

HMC659LC5

Analog Devices

WIDE BAND MEDIUM POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

1

20 dBm

COMPONENT

3/8

LCC32,.2SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

14 dB

-40 Cel

GOLD OVER NICKEL

e4

0 MHz

15000 MHz

RA30H1317M

Mitsubishi Electric

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

MODULE

5,12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

110 Cel

-30 Cel

135 MHz

175 MHz

SGA-3563Z

Sirenza Microdevices

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

1.2

39 mA

COMPONENT

3.2

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

19.5 dB

-40 Cel

Matte Tin (Sn)

e3

0 MHz

5000 MHz

SGA-6489Z

Sirenza Microdevices

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

1.8

83 mA

COMPONENT

5.1

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

18.4 dB

-40 Cel

Matte Tin (Sn)

e3

0 MHz

3500 MHz

SGA3563Z

Qorvo

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

39 mA

COMPONENT

3.2

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

19.5 dB

-40 Cel

Matte Tin (Sn)

LOW NOISE

e3

0 MHz

5000 MHz

SGA6489Z

Qorvo

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

83 mA

COMPONENT

5.1

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

18.4 dB

-40 Cel

Matte Tin (Sn)

e3

0 MHz

3500 MHz

AD8350ARMZ20

Analog Devices

WIDE BAND MEDIUM POWER

8 dBm

COMPONENT

200 ohm

85 Cel

19 dB

-40 Cel

MATTE TIN

e3

1000 MHz

BGM1013,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

-10 dBm

33 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

24 dB

-40 Cel

Tin (Sn)

LOW NOISE

e3

100 MHz

3000 MHz

HMC752LC4

Analog Devices

WIDE BAND LOW POWER

-5 dBm

COMPONENT

50 ohm

85 Cel

23 dB

-40 Cel

GOLD OVER NICKEL

e4

24000 MHz

28000 MHz

MAAL-011129-TR1000

M/a-com Technology Solutions

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

85 Cel

20 dB

-40 Cel

Matte Tin (Sn)

e3

18000 MHz

31500 MHz

MAAM-011252-TR1000

M/a-com Technology Solutions

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

22.5 dBm

1.67

75 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

85 Cel

17 dB

-40 Cel

30 MHz

8000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.