Analog Devices - HMC517LC4

HMC516LC5TR by Analog Devices is a GAAS wide band low power RF amplifier with 1 function and 32 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V, drawing a max current of 88mA. This surface mount package is suitable for various RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Tin (Sn);

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 1.25;

HMC499LC4 by Analog Devices is a ceramic-packaged RF amplifier with a wide band medium power capability. It operates at frequencies ranging from 21 GHz to 32 GHz, providing a gain of 9 dB. This component is suitable for surface mount applications and can handle a max input power of 20 dBm.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; JESD-609 Code: e3;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3; Maximum Input Power (CW): 20 dBm; Maximum Operating Frequency: 6000 MHz;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz; Gain: 14 dB; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 36; Package Body Material: PLASTIC/EPOXY; Technology: GAN; Gain: 26 dB;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -40 Cel;

NARROW BAND HIGH POWER; Terminal Finish: Matte Tin (Sn); Maximum Input Power (CW): 22 dBm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 10; Characteristic Impedance: 50 ohm;

WIDE BAND HIGH POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 1500 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 30 dBm; Gain: 19 dB;

HMC451LP3ETR by Analog Devices is a GAAS RF amplifier with 12.5 dB gain, operating from 5V supply at frequencies ranging from 5-18 GHz. With a max input power of 10 dBm, it's ideal for wideband low-power applications in RF and microwave systems requiring surface mount components.

WIDE BAND HIGH POWER;

Broadcom's MGA-82563-BLKG is a GAAS RF amplifier with 8.8 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 1.2, suitable for wideband low-power applications in RF and microwave systems. The component is surface-mountable with a max supply current of 101 mA and operates b/w -40°C to 85°C.

WIDE BAND LOW POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Gain: 18 dB;

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 50 MHz; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 10 dBm;