RF & Microwave Amplifiers

Reset All
Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

SA5200D

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

20 dBm

8.4 mA

COMPONENT

5

SOP8,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

0 MHz

1200 MHz

OM2083

NXP Semiconductors

WIDE BAND LOW POWER

1.4

MODULE

40 MHz

860 MHz

CGY2011G

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

48

PLASTIC/EPOXY

GAAS

1.5 dBm

COMPONENT

4.5

QFP48,.35SQ,20

RF/Microwave Amplifiers

85 Cel

-20 Cel

880 MHz

915 MHz

BGY95B

NXP Semiconductors

NARROW BAND HIGH POWER

16 dBm

2

MODULE

50 ohm

90 Cel

-30 Cel

890 MHz

915 MHz

NE5204AD

NXP Semiconductors

WIDE BAND LOW POWER

1.5

COMPONENT

50 ohm

70 Cel

0 Cel

0 MHz

350 MHz

CA4812CS

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

14 dBm

2.6

400 mA

MODULE

12

MOT CASE 714T-01

50 ohm

RF/Microwave Amplifiers

100 Cel

-20 Cel

10 MHz

1000 MHz

BGA3031J

NXP Semiconductors

SURFACE MOUNT

20

PLASTIC/EPOXY

1

5

LCC20,.20SQ,25

RF/Microwave Amplifiers

NICKEL PALLADIUM GOLD SILVER

e4

BGY835C

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

340 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

34 dB

-20 Cel

LOW NOISE

40 MHz

860 MHz

BGA6589

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

15 dBm

89 mA

COMPONENT

9

TO-243

50 ohm

RF/Microwave Amplifiers

15 dB

Tin (Sn)

e3

850 MHz

2500 MHz

TDA8011T

NXP Semiconductors

WIDE BAND LOW POWER

COMPONENT

50 ohm

80 Cel

25 dB

-10 Cel

LOW NOISE

BGY86

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

16.25 dBm

200 mA

MODULE

24

SOT-115C

75 ohm

RF/Microwave Amplifiers

100 Cel

21.7 dB

-20 Cel

LOW NOISE

40 MHz

450 MHz

CGY2030M-T

NXP Semiconductors

NARROW BAND MEDIUM POWER

5 dBm

COMPONENT

50 ohm

85 Cel

27 dB

-30 Cel

1880 MHz

2000 MHz

BGY115B

NXP Semiconductors

NARROW BAND MEDIUM POWER

7 dBm

3

COMPONENT

50 ohm

100 Cel

27.8 dB

-30 Cel

872 MHz

905 MHz

BGY925/5,127

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

19 dBm

2

MODULE

5,26

FLNG,1.6"H.SPACE

50 ohm

RF/Microwave Amplifiers

90 Cel

28 dB

-10 Cel

920 MHz

960 MHz

BGY67

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

230 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

90 Cel

21.5 dB

-20 Cel

LOW NOISE

5 MHz

200 MHz

CA4800C

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

14 dBm

2.6

240 mA

MODULE

24

SOT-115J

50 ohm

RF/Microwave Amplifiers

100 Cel

-20 Cel

10 MHz

1000 MHz

A3I35D025WGNR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

28 dBm

10

COMPONENT

28

50 ohm

150 Cel

26.5 dB

-40 Cel

3200 MHz

4000 MHz

BGY883,112

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

235 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

15 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

860 MHz

MW4IC2230GMBR1

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

20 dBm

3

COMPONENT

28

FLNG,.8''H SPACE

50 ohm

RF/Microwave Amplifiers

85 Cel

29 dB

-10 Cel

Tin/Lead (Sn/Pb)

e0

2110 MHz

2170 MHz

934032040112

NXP Semiconductors

WIDE BAND MEDIUM POWER

MODULE

75 ohm

100 Cel

15 dB

-20 Cel

Gold (Au)

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

860 MHz

BGA7024,115

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

125 mA

5

TO-243

RF/Microwave Amplifiers

TIN

e3

BLM7G1822S-40ABGY

NXP Semiconductors

SURFACE MOUNT

16

PLASTIC/EPOXY

2

28

SOP16(UNSPEC)

RF/Microwave Amplifiers

NE5209D-T

NXP Semiconductors

WIDE BAND LOW POWER

COMPONENT

50 ohm

70 Cel

0 Cel

0 MHz

850 MHz

BGY122AT/R

NXP Semiconductors

NARROW BAND MEDIUM POWER

7 dBm

3

MODULE

50 ohm

100 Cel

27.8 dB

-30 Cel

824 MHz

849 MHz

A3I20X050GNR3

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

7

PLASTIC/EPOXY

LDMOS

1

20 dBm

COMPONENT

2.15/28

50 ohm

150 Cel

28 dB

-40 Cel

1800 MHz

2200 MHz

BGD702N,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

435 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

750 MHz

BGA7017

NXP Semiconductors

WIDE BAND LOW POWER

CA901A

NXP Semiconductors

WIDE BAND LOW POWER

PLASTIC/EPOXY

HYBRID

-34.75 dBm

MODULE

24

MOT CASE 714P-01

75 ohm

RF/Microwave Amplifiers

100 Cel

16.5 dB

-20 Cel

HIGH RELIABILITY

40 MHz

860 MHz

934041270112

NXP Semiconductors

WIDE BAND HIGH POWER

MODULE

75 ohm

100 Cel

20 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

750 MHz

BGF1801-10

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

2.2

280 mA

COMPONENT

26

FLNG,1.6"H.SPACE

50 ohm

RF/Microwave Amplifiers

85 Cel

24 dB

-20 Cel

1805 MHz

1880 MHz

BGU2003

NXP Semiconductors

NARROW BAND LOW POWER

PLASTIC/EPOXY

BIPOLAR

1

15 mA

COMPONENT

2.5

SOT-343R

50 ohm

RF/Microwave Amplifiers

13 dB

934060863112

NXP Semiconductors

WIDE BAND HIGH POWER

MODULE

75 ohm

100 Cel

34 dB

-20 Cel

LOW NOISE

40 MHz

860 MHz

OM321

NXP Semiconductors

THROUGH HOLE MOUNT

10

PLASTIC/EPOXY

HYBRID

24

SIP10,.2

RF/Microwave Amplifiers

70 Cel

-20 Cel

Tin/Lead (Sn/Pb)

e0

A2I09VD050GNR1

NXP Semiconductors

WIDE BAND HIGH POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

LDMOS

1

20 dBm

10

COMPONENT

48

50 ohm

150 Cel

35 dB

-40 Cel

TIN

e3

575 MHz

960 MHz

BGY587

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

22 dB

-20 Cel

LOW NOISE

40 MHz

550 MHz

BGD702,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

435 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

750 MHz

OM2063

NXP Semiconductors

WIDE BAND LOW POWER

1.4

MODULE

29 dB

LOW NOISE

40 MHz

860 MHz

934056630699

NXP Semiconductors

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

23.2 dB

TIN

e3

1000 MHz

2000 MHz

934055919112

NXP Semiconductors

WIDE BAND HIGH POWER

21.25 dBm

MODULE

75 ohm

100 Cel

20.5 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

870 MHz

BGY116D

NXP Semiconductors

NARROW BAND HIGH POWER

10 dBm

3

COMPONENT

50 ohm

100 Cel

37.8 dB

-30 Cel

800 MHz

870 MHz

BGY582

NXP Semiconductors

WIDE BAND LOW POWER

MODULE

75 ohm

100 Cel

14.5 dB

-20 Cel

LOW NOISE

40 MHz

550 MHz

934061068112

NXP Semiconductors

WIDE BAND LOW POWER

MODULE

100 Cel

34.5 dB

-20 Cel

LOW NOISE

40 MHz

870 MHz

NE5212AD-T

NXP Semiconductors

WIDE BAND LOW POWER

70 Cel

0 Cel

LOW NOISE

140 MHz

AFIC10275GN

NXP Semiconductors

NARROW BAND HIGH POWER

BGY916/5

NXP Semiconductors

NARROW BAND HIGH POWER

19 dBm

2

MODULE

50 ohm

90 Cel

28 dB

-10 Cel

920 MHz

960 MHz

CGY2013GBE-T

NXP Semiconductors

NARROW BAND HIGH POWER

2 dBm

50 ohm

85 Cel

35.5 dB

-20 Cel

LOW NOISE

880 MHz

915 MHz

BGY585A

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

18.8 dB

-20 Cel

LOW NOISE

40 MHz

550 MHz

OM926/E

NXP Semiconductors

WIDE BAND LOW POWER

2.3

MODULE

75 ohm

10 MHz

2050 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.