Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
12000 MHz |
16000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
12000 MHz |
16000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
5 dBm |
88 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-55 Cel |
GOLD |
e4 |
7000 MHz |
17000 MHz |
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Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
33 dBm |
6 |
100 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
10 MHz |
2800 MHz |
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Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
33 dBm |
6 |
100 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
10 MHz |
2800 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
26 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
20.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
24000 MHz |
29500 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
0 MHz |
22000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
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TE Connectivity |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
11 mA |
3/5 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
HYBRID |
1 |
13 dBm |
1.8 |
COMPONENT |
3.7 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
0 MHz |
1000 MHz |
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Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
HYBRID |
1 |
13 dBm |
1.8 |
COMPONENT |
3.7 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier |
LOW NOISE |
e2 |
0 MHz |
1000 MHz |
||||||
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
9 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
6 |
205 mA |
COMPONENT |
3 |
BGA9,3X3,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn63Pb37) |
e0 |
2400 MHz |
2500 MHz |
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Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.6 |
COMPONENT |
3.8 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.3 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
0 MHz |
1100 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.6 |
COMPONENT |
3.8 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.3 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
LOW NOISE |
e3 |
0 MHz |
1100 MHz |
|||||||
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
131 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
36.5 dB |
Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
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Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
125 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
13.7 dB |
Tin (Sn) |
LOW NOISE |
e3 |
40 MHz |
3000 MHz |
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Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
4 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Matte Tin (Sn) |
e3 |
1400 MHz |
3800 MHz |
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Microchip Technology |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
78 mA |
COMPONENT |
4 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
6000 MHz |
18000 MHz |
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Qorvo |
WIDE BAND LOW POWER |
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Qorvo |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
GAN |
1 |
12 dBm |
10 |
COMPONENT |
LCC36,.24X.4,27 |
50 ohm |
26 dB |
4400 MHz |
5000 MHz |
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Sirenza Microdevices |
WIDE BAND LOW POWER |
18 dBm |
10 |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
5 MHz |
2000 MHz |
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Qorvo |
WIDE BAND LOW POWER |
18 dBm |
10 |
COMPONENT |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
5 MHz |
2000 MHz |
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Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
10 |
7 mA |
COMPONENT |
3.3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
5 MHz |
2000 MHz |
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Skyworks Solutions |
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Skyworks Solutions |
WIDE BAND LOW POWER |
21 dBm |
COMPONENT |
50 ohm |
105 Cel |
14.5 dB |
-40 Cel |
700 MHz |
3800 MHz |
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Api Technologies |
WIDE BAND LOW POWER |
10 dBm |
2 |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-55 Cel |
I/P POWER-MAX (PEAK)=27DBM |
1000 MHz |
2000 MHz |
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Microchip Technology |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
2 |
COMPONENT |
3.3 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
28 dB |
-40 Cel |
Matte Tin (Sn) |
HIGH RELIABILITY, IT CAN ALSO OPERATE AT 4920 TO 5805 MHZ |
e3 |
2400 MHz |
2500 MHz |
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Qorvo |
WIDE BAND LOW POWER |
GAAS |
1 |
22 dBm |
COMPONENT |
5 |
DIE OR CHIP |
RF/Microwave Amplifiers |
17.5 dB |
2000 MHz |
20000 MHz |
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Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
GAN |
1 |
20 dBm |
3 |
70 mA |
COMPONENT |
-2.7,20 |
50 ohm |
25 dB |
13000 MHz |
18000 MHz |
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Qorvo |
WIDE BAND MEDIUM POWER |
18 dBm |
COMPONENT |
8 dB |
0 MHz |
50000 MHz |
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Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
29 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
30 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
1000 MHz |
||||||||
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BICMOS |
1 |
COMPONENT |
3.3 |
LCC12,.08SQ,20 |
50 ohm |
105 Cel |
16 dB |
-40 Cel |
10 MHz |
11000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
19 dB |
-40 Cel |
MATTE TIN |
e3 |
1000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
14.3 dB |
-40 Cel |
MATTE TIN |
e3 |
50 MHz |
6000 MHz |
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Broadcom |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
930 mA |
MODULE |
5 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
13.5 dB |
1700 MHz |
2700 MHz |
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Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
140 mA |
COMPONENT |
5 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Amplifiers |
13 dB |
Nickel/Gold (Ni/Au) |
e4 |
6000 MHz |
20000 MHz |
||||||||||
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
23.2 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
|||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 dBm |
1.43 |
COMPONENT |
1.8/2.85 |
SOLCC6,.04,20 |
50 ohm |
150 Cel |
17.5 dB |
1559 MHz |
1610 MHz |
|||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
17.6 dB |
-40 Cel |
Pure Tin (Sn) |
1559 MHz |
1610 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 dBm |
1.78 |
1.6 mA |
COMPONENT |
0.8,1.8/2.85 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
14.5 dB |
-40 Cel |
1559 MHz |
1610 MHz |
|||||||||
NXP Semiconductors |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
2 |
28 |
SOP16(UNSPEC) |
RF/Microwave Amplifiers |
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Qorvo |
WIDE BAND MEDIUM POWER |
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Qorvo |
WIDE BAND LOW POWER |
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Qorvo |
WIDE BAND LOW POWER |
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Wolfspeed |
WIDE BAND LOW POWER |
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Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
15 dBm |
1.6 |
40 mA |
COMPONENT |
3 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.9 dB |
-45 Cel |
TIN SILVER OVER NICKEL |
USABLE TO 10 GHZ |
e2 |
0 MHz |
6000 MHz |
||||||
Mini-circuits |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
15 dBm |
1.7 |
40 mA |
COMPONENT |
3 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
6000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.