Mini-circuits - HELA-10B+

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 22 dB;

HMC659LC5 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 50 ohm impedance. It operates from 0 to 15000 MHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in a compact plastic/epoxy package.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Maximum Input Power (CW): 20 dBm; Package Equivalence Code: SOT-343R;

Qorvo's QPA1019TR7 is a wide band high power RF amplifier with 30 dB gain, operating from 4.5 GHz to 7 GHz. It can handle up to 28 dBm CW input power and has gold terminal finish. Ideal for RF & microwave applications requiring high power amplification in temperatures ranging from -40°C to 85°C.

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 3300 MHz;

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 130 MHz; Characteristic Impedance: 50 ohm;

The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND HIGH POWER; Maximum Operating Frequency: 6000 MHz; Construction: MODULE; Gain: 19.5 dB; Minimum Operating Frequency: 2500 MHz; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 20000 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT;

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 2.1; Gain: 9.2 dB; Maximum Operating Frequency: 6000 MHz;

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz; Gain: 12.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 13 dBm;

WIDE BAND MEDIUM POWER; Gain: 19.4 dB; Minimum Operating Frequency: 50 MHz; JESD-609 Code: e4; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 30 dBm;

WIDE BAND LOW POWER;

Analog Devices' HMC326MS8GETR is a wide band medium power RF amplifier with 18dB gain and 50 ohm impedance. It operates from 3-4.5GHz, handles up to 15dBm input power, and requires a 5V supply. Ideal for RF & microwave applications requiring high performance in a compact surface mount package.

The Qorvo TQP3M9035 is a wide band medium power RF amplifier with 15 dB gain, suitable for frequencies ranging from 50 MHz to 6 GHz. It can handle up to 23 dBm of CW input power and operates in temperatures from -40°C to 85°C. Ideal for RF and microwave applications requiring high performance amplification.