RF & Microwave Amplifiers

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

HMC311ST89TR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

74 mA

5

TO-243

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC342LC4TR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

3

LCC24,.16SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC383LC4TR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

1

135 mA

5

LCC24,.16SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC409LP4ETR

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

COMPONENT

5

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

28 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

3300 MHz

3800 MHz

HMC457QS16GTR

Hittite Microwave

NARROW BAND MEDIUM POWER

HMC506LP4ETR

Analog Devices

NARROW BAND LOW POWER

MATTE TIN

e3

HMC863ALC4

Analog Devices

WIDE BAND MEDIUM POWER

26 dBm

7

COMPONENT

50 ohm

85 Cel

20.5 dB

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

e4

24000 MHz

29500 MHz

HMC863ALC4TR-R5

Analog Devices

WIDE BAND MEDIUM POWER

26 dBm

7

COMPONENT

50 ohm

85 Cel

20.5 dB

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

e4

24000 MHz

29500 MHz

HMC943APM5E

Analog Devices

WIDE BAND MEDIUM POWER

20 dBm

7

COMPONENT

50 ohm

85 Cel

20.5 dB

-40 Cel

24000 MHz

34000 MHz

HMC943APM5ETR

Analog Devices

WIDE BAND MEDIUM POWER

20 dBm

7

COMPONENT

50 ohm

85 Cel

20.5 dB

-40 Cel

24000 MHz

34000 MHz

HMC997LC4TR

Analog Devices

WIDE BAND MEDIUM POWER

Tungsten/Nickel/Gold (W/Ni/Au)

M67799HA

Mitsubishi Electric

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

14.77 dBm

20

MODULE

3.5,9.6

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

450 MHz

470 MHz

MAMX-011009-TR1000

M/a-com Technology Solutions

WIDE BAND MEDIUM POWER

MAX2373ETC+T

Analog Devices

NARROW BAND LOW POWER

Matte Tin (Sn) - annealed

e3

MAX9933EUA+T

Analog Devices

WIDE BAND LOW POWER

6 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

e3

2 MHz

1600 MHz

MGA-23003-TR1G

Broadcom

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

15 dBm

COMPONENT

3.3

LCC16,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

32 dB

-40 Cel

3300 MHz

3800 MHz

MGA-30889-BLKG

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

GAAS

1

20 dBm

77 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

14.6 dB

Matte Tin (Sn)

e3

40 MHz

2600 MHz

MGA-81563-BLK

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

13 dBm

2

51 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

Tin/Lead (Sn/Pb)

LOW NOISE, HIGH RELIABILITY

e0

100 MHz

6000 MHz

MMRF2010GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

14

PLASTIC/EPOXY

LDMOS

1

25 dBm

10

COMPONENT

50

50 ohm

150 Cel

30.5 dB

-55 Cel

TIN

e3

1030 MHz

1090 MHz

MMZ25332BT1

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

BIPOLAR

1

412 mA

5

LCC12,.12SQ,20

RF/Microwave Amplifiers

MATTE TIN

e3

MSA-1105-STR

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

13 dBm

1.7

70 mA

COMPONENT

5.5

SL,4GW-LD,.145CIR

50 ohm

RF/Microwave Amplifiers

10 dB

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

50 MHz

1300 MHz

MW7IC2725NBR1

NXP Semiconductors

NARROW BAND HIGH POWER

22 dBm

10

COMPONENT

50 ohm

25.5 dB

Matte Tin (Sn)

e3

2300 MHz

2700 MHz

NBB-400-D

Qorvo

WIDE BAND LOW POWER

1

20 dBm

1.9

COMPONENT

50 ohm

85 Cel

15.5 dB

-45 Cel

Matte Tin (Sn)

e3

0 MHz

8000 MHz

NBB-400-SR

Qorvo

SURFACE MOUNT

4

CERAMIC

BIPOLAR

1

3.9

SL,4LEAD,.07SQ

RF/Microwave Amplifiers

85 Cel

-45 Cel

NJG1150UA2-TE1

New Japan Radio

NARROW BAND LOW POWER

NPA1006A

M/a-com Technology Solutions

WIDE BAND HIGH POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

HEMT

1

15

COMPONENT

28

SOLCC8,.23

50 ohm

85 Cel

12.5 dB

-40 Cel

20 MHz

1000 MHz

NPA1006A-TR0500

M/a-com Technology Solutions

WIDE BAND HIGH POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

HEMT

1

15

COMPONENT

28

SOLCC8,.23

50 ohm

85 Cel

12.5 dB

-40 Cel

20 MHz

1000 MHz

PTMA180402M-V1-R500

Wolfspeed

NARROW BAND HIGH POWER

QPA2225D

Qorvo

WIDE BAND MEDIUM POWER

SURFACE MOUNT

4

GAN

1

18 dBm

3

COMPONENT

20

DIE OR CHIP

50 ohm

23 dB

28000 MHz

38000 MHz

QPA9421TR13

Qorvo

NARROW BAND HIGH POWER

QPL6207QTR7

Qorvo

NARROW BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

E-PHEMT

AEC-Q100

1

30 dBm

2.2

68 mA

COMPONENT

4.5

SOLCC8,.08,20

50 ohm

105 Cel

18.1 dB

-40 Cel

2320 MHz

2345 MHz

QPL9503TR7

Qorvo

WIDE BAND LOW POWER

30 dBm

COMPONENT

50 ohm

105 Cel

18.5 dB

-40 Cel

NICKEL PALLADIUM GOLD

e4

600 MHz

6000 MHz

RA07M4047M

Mitsubishi Electric

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

18.45 dBm

4

MODULE

3.5,7.2

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

110 Cel

-30 Cel

400 MHz

470 MHz

RA07M4047M-101

Mitsubishi Electric

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

18.45 dBm

4

MODULE

3.5,7.2

FLNG,1.0"H.SPACE

50 ohm

RF/Microwave Amplifiers

90 Cel

-30 Cel

400 MHz

470 MHz

RA20H8994M-101

Mitsubishi Electric

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

3

MODULE

5,12.5

FLNG,2.4"H.SPACE

50 ohm

RF/Microwave Amplifiers

110 Cel

-30 Cel

896 MHz

941 MHz

RF3931

Rf Micro Devices

WIDE BAND HIGH POWER

CERAMIC

1

37 dBm

10

MODULE

28/48

FLNG,.59"H.SPACE

50 ohm

RF/Microwave Amplifiers

85 Cel

15 dB

-40 Cel

0 MHz

3000 MHz

SGA-2463Z

Sirenza Microdevices

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

23 mA

COMPONENT

2.7

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

17.1 dB

-40 Cel

Matte Tin (Sn)

e3

0 MHz

5000 MHz

SGA2463Z

Qorvo

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

23 mA

COMPONENT

2.7

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-40 Cel

Matte Tin (Sn)

e3

0 MHz

5000 MHz

SKY65404-31

Skyworks Solutions

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

10 dBm

COMPONENT

3

SOLCC6,.06,20

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

4900 MHz

5900 MHz

TGA4521

Qorvo

WIDE BAND MEDIUM POWER

GAAS

1

20 dBm

COMPONENT

6

DIE OR CHIP

RF/Microwave Amplifiers

16 dB

32000 MHz

45000 MHz

XP1050-QJ-0G0T

M/a-com Technology Solutions

WIDE BAND HIGH POWER

25 dBm

COMPONENT

85 Cel

15 dB

-40 Cel

Matte Tin (Sn)

e3

7000 MHz

9000 MHz

ZX60-P162LN+

Mini-circuits

WIDE BAND LOW POWER

PANEL MOUNT

1

25 dBm

2.11

60 mA

COAXIAL

4

50 ohm

85 Cel

20.9 dB

-40 Cel

SMA-F

700 MHz

1600 MHz

A5M36TG140T2

NXP Semiconductors

NARROW BAND HIGH POWER

ABA-52563-TR1

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

20 dBm

1.4

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

20 dB

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

0 MHz

3500 MHz

ADA-4643-TR2G

Broadcom

WIDE BAND LOW POWER

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

1.6

COMPONENT

3.5

SOT-343R

50 ohm

RF/Microwave Amplifiers

15.5 dB

Matte Tin (Sn)

HIGH RELIABILITY

e3

0 MHz

2500 MHz

ADL5534ACPZ-R7

Analog Devices

WIDE BAND MEDIUM POWER

12 dBm

COMPONENT

50 ohm

85 Cel

18.8 dB

-40 Cel

MATTE TIN

e3

20 MHz

500 MHz

ADL8106ACEZ

Analog Devices

WIDE BAND LOW POWER

ADL8106ACEZ-R7

Analog Devices

WIDE BAND LOW POWER

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.