Onsemi Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
PN2907ATA	Onsemi	PNP	SINGLE	NO	200 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBTA42LT3G	Onsemi	NPN	SINGLE	YES	50 MHz	.225 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
PN2222ATFR	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns	-55 Cel	285 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC807-25WT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.46 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SMMBT3906LT3G	Onsemi	PNP	SINGLE	YES	250 MHz	.3 W	.2 A	PLASTIC/EPOXY		.4 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel	4.5 pF	SILICON	40 V	70 ns	-65 Cel	300 ns	MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
PN2907ATF	Onsemi	PNP	SINGLE	NO	200 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC856BLT3G	Onsemi	PNP	SINGLE	YES	100 MHz	.225 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
SPZT2222AT1G	Onsemi	NPN	SINGLE	YES	300 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING	1 V	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel	8 pF	SILICON	40 V	35 ns	-55 Cel	285 ns	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260	AEC-Q101
BC857BWT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC32740BU	Onsemi	PNP	SINGLE	NO	100 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		170	150 Cel		SILICON	45 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC846	Onsemi	NPN	SINGLE	YES	300 MHz		.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			110	150 Cel		SILICON	65 V					DUAL	R-PDSO-G3	1		Not Qualified
BC848CLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel	4.5 pF	SILICON	30 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC857BMTF	Onsemi	PNP	SINGLE	YES	150 MHz	.31 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	6 pF	SILICON	45 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMPQ2222A	Onsemi	NPN	SEPARATE, 4 ELEMENTS	YES	350 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	4	16	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G16	3		Not Qualified			e3	30	260
BC547CZL1G	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		420	150 Cel		SILICON	45 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1		260
SBC847BDW1T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101
2N3906TAR	Onsemi	PNP	SINGLE	NO	250 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		300 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
2N3906TA	Onsemi	PNP	SINGLE	NO	250 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	300 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC557BTF	Onsemi	PNP	SINGLE	NO	150 MHz	.5 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
NSVMMBT2222ATT1G	Onsemi																									MATTE TIN			1					e3	30	260
2N3906TF	Onsemi	PNP	SINGLE	NO	250 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		300 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC33716TA	Onsemi	NPN	SINGLE	NO		.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SMMUN2233LT1G	Onsemi	NPN		YES		.4 W	.1 A						1		SMALL OUTLINE	BIP General Purpose Small Signal		80			SILICON	50 V				MATTE TIN			1					e3	30	260
BC847BPDW1T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		200	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
BC33716BU	Onsemi	NPN	SINGLE	NO		.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBTA06LT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.225 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
BC32725TA	Onsemi	PNP	SINGLE	NO	100 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SBC807-40WT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.46 W	.5 A						1			Other Transistors		250	150 Cel							MATTE TIN			1					e3	30	260
FFB2227A	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	250 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		75	150 Cel		SILICON	30 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
NSVMMBT2907AWT1G	Onsemi	PNP	SINGLE	YES	200 MHz	.15 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
PN2222ATF	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
2N4401TF	Onsemi	NPN	SINGLE	NO	250 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		255 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT4401M3T5G	Onsemi	NPN	SINGLE	YES	250 MHz	.64 W	.6 A	PLASTIC/EPOXY	SWITCHING	.75 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	.64 W	100	150 Cel	6.5 pF	SILICON	40 V	35 ns	-55 Cel	255 ns	MATTE TIN	DUAL	R-PDSO-F3	1		Not Qualified			e3	30	260
SMMBT5551LT3G	Onsemi	NPN	SINGLE	YES		.3 W	.6 A	PLASTIC/EPOXY	SWITCHING	.2 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel		SILICON	160 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
SS8050CBU	Onsemi	NPN	SINGLE	NO	190 MHz	1 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		120	150 Cel		SILICON	25 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
PN2222ATA	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SS8050DTA	Onsemi	NPN	SINGLE	NO	190 MHz	1 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	25 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC847BDW1T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
NSVBC848CLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			420	150 Cel	4.5 pF	SILICON	30 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1				TO-236	e3	30	260	AEC-Q101
KSP2222ABU	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.6 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		75	150 Cel		SILICON	40 V	35 ns		285 ns	TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC33725TFR	Onsemi	NPN	SINGLE	NO		.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT5551LT3G	Onsemi	NPN	SINGLE	YES	200 MHz	.3 W	.06 A	PLASTIC/EPOXY	SWITCHING	.2 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel		SILICON	160 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BSR16	Onsemi	PNP	SINGLE	YES	200 MHz	.35 W	.8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	60 V	45 ns	-55 Cel	100 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
DTC114EET1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.3 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1		e3	40	260
BC548BU	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	30 V				Tin (Sn)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
NSVMMBT2907AM3T5G	Onsemi	PNP	SINGLE	YES	200 MHz	.64 W	.6 A	PLASTIC/EPOXY	AMPLIFIER	1.6 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE			50	150 Cel	8 pF	SILICON	60 V	45 ns	-55 Cel	100 ns	MATTE TIN	DUAL	R-PDSO-F3	1					e3	30	260	AEC-Q101
NSVMMBT3906TT1G	Onsemi	PNP	SINGLE	YES	250 MHz		.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30			SILICON	40 V	70 ns		300 ns	MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260
BC847BS	Onsemi	NPN	SINGLE	YES	100 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	6	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260

Onsemi Small Signal Bipolar Junction Transistors (BJT) 2,400+

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