Onsemi Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BC847BWT1G	Onsemi	NPN	SINGLE	YES	100 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT4401WT1G	Onsemi	NPN	SINGLE	YES	250 MHz	.15 W	.6 A	PLASTIC/EPOXY	SWITCHING	.75 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	.15 W	40	150 Cel	6.5 pF	SILICON	40 V	35 ns	-55 Cel	255 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SBCW66GLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.8 A						1			Other Transistors		160	150 Cel							MATTE TIN			1					e3	30	260
SBC817-25LT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC548BTA	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	30 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC557ATA	Onsemi	PNP	SINGLE	NO	150 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		110	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC807-25LT3G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC546BTA	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	65 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e3
BC32725BU	Onsemi	PNP	SINGLE	NO	100 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	150 Cel		SILICON	45 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC33725TAR	Onsemi	NPN	SINGLE	NO		.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
NSVMMBT2222AM3T5G	Onsemi	NPN	SINGLE	YES	300 MHz	.64 W	.6 A	PLASTIC/EPOXY	AMPLIFIER	1 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE			75	150 Cel	8 pF	SILICON	40 V	35 ns	-55 Cel	285 ns	MATTE TIN	DUAL	R-PDSO-F3	1					e3	30	260	AEC-Q101
PZTA42T1G	Onsemi	NPN	SINGLE	YES	50 MHz	1.5 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
SPZTA42T1G	Onsemi	NPN	SINGLE	YES	50 MHz	1.5 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260	AEC-Q101
SS8050CTA	Onsemi	NPN	SINGLE	NO	190 MHz	1 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		120	150 Cel		SILICON	25 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT2907ALT1	Onsemi	PNP	SINGLE	YES	200 MHz	.225 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	60 V	45 ns	-55 Cel	100 ns	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
BC847CDXV6T1G	Onsemi	NPN	SEPARATE, 2 ELEMENTS	YES	100 MHz	.5 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-F6	1		Not Qualified			e3	30	260
MMBTA06WT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC548CTA	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		420	150 Cel		SILICON	30 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT2907AM3T5G	Onsemi	PNP	SINGLE	YES	200 MHz	.64 W	.6 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	DUAL	R-PDSO-F3	1		Not Qualified			e3	30	260
BC848CWT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	30 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SMMBT2222AWT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.15 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
BC847CLT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC856BMTF	Onsemi	PNP	SINGLE	YES	150 MHz	.31 W	.1 A	PLASTIC/EPOXY	SWITCHING	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	6 pF	SILICON	65 V				TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC857BDW1T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
PZT2222A	Onsemi	NPN	SINGLE	YES	300 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	40 V	35 ns	-55 Cel	285 ns	TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260
MMPQ2222AR1	Onsemi	NPN	SEPARATE, 4 ELEMENTS	YES	350 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	4	16	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V				TIN LEAD	DUAL	R-PDSO-G16	1		Not Qualified			e0		235
SBC847CWT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.1 A						1			Other Transistors		420	150 Cel							MATTE TIN			1					e3	30	260
SMUN5211T1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.31 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTOR RATIO IS 1		e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
MMBTA56WT1G	Onsemi	PNP	SINGLE	YES	50 MHz	.15 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT5401LT3G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	150 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
MMUN2111LT1G	Onsemi	PNP	SINGLE WITH BUILT-IN RESISTOR	YES		.4 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO 1	TO-236AB	e3	40	260
SS8050DBU	Onsemi	NPN	SINGLE	NO	190 MHz	1 W	1.5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	25 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
2N4401TA	Onsemi	NPN	SINGLE	NO	250 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		255 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SBC847BWT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
MMBT5551M3T5G	Onsemi	NPN	SINGLE	YES			.06 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel		SILICON	160 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-F3	1					e3	30	260
BC546BTF	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	65 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified	LOW NOISE	TO-92	e3
2N5551TA	Onsemi	NPN	SINGLE	NO	100 MHz	.35 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	160 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC557BZL1G	Onsemi	PNP	SINGLE	NO	320 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		180	150 Cel		SILICON	45 V				Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1	40	260
NSS1C201LT1G	Onsemi	NPN	SINGLE	YES	110 MHz	.71 W	2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	100 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	NOT SPECIFIED	NOT SPECIFIED
SMMUN2111LT1G	Onsemi	PNP	SINGLE WITH BUILT-IN RESISTOR	YES		.4 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTANCE RATIO IS 1	TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC857CDW1T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
BC848BLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	4.5 pF	SILICON	30 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
PZT2222AT3G	Onsemi	NPN	SINGLE	YES	300 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
BC847AWT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.0024 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC850CLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
MMBT5550LT1G	Onsemi	NPN	SINGLE	YES	200 MHz	.3 W	.6 A	PLASTIC/EPOXY	SWITCHING	.25 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			20	150 Cel		SILICON	140 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
SBC857BDW1T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101
BC807-16LT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING	.7 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260

Onsemi Small Signal Bipolar Junction Transistors (BJT) 2,400+

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