Onsemi Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BC547BRL1G	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V		-55 Cel		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1	40	260
SMMBT5551LT1G	Onsemi	NPN	SINGLE	YES		.3 W	.6 A	PLASTIC/EPOXY	SWITCHING	.2 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel		SILICON	160 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
MMBT2222ALT1	Onsemi	NPN	SINGLE	YES	300 MHz	.225 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		35	150 Cel		SILICON	40 V	35 ns	-55 Cel	285 ns	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
BC547BG	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1	40	260
SBC846BPDW1T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		200	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101
BC846BWT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.0024 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	65 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT2222LT1G	Onsemi	NPN	SINGLE	YES	250 MHz	.225 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		75	150 Cel		SILICON	30 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
BC817-40LT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
PN2907ABU	Onsemi	PNP	SINGLE	NO	200 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC857BTT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC846ALT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC847CWT1G	Onsemi	NPN	SINGLE	YES	100 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V				MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC847ALT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		110	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
PZT2222AT1G	Onsemi	NPN	SINGLE	YES	300 MHz	1.5 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
BC856BDW1T1G	Onsemi	PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	65 V				MATTE TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
SMMUN2214LT1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.4 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		80			SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1			BUILT IN BIAS RESISTANCE RATIO IS 4.7	TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
2N4403BU	Onsemi	PNP	SINGLE	NO	200 MHz	.35 W	.6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		100	150 Cel		SILICON	40 V	35 ns		255 ns	TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC33725TA	Onsemi	NPN	SINGLE	NO		.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SMUN5311DW1T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	YES		.256 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		35			SILICON	50 V				MATTE TIN	DUAL	R-PDSO-G6	1			BUILT IN BIAS RESISTANCE RATIO IS 1		e3	30	260	AEC-Q101
BC33725BU	Onsemi	NPN	SINGLE	NO		.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		160	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SMMBT3904TT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
MMBT3906LT3G	Onsemi	PNP	SINGLE	YES	250 MHz	.3 W	.2 A	PLASTIC/EPOXY		.4 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel	4.5 pF	SILICON	40 V	70 ns	-65 Cel	300 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
NSVBC817-16LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC857CLT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
MMBT5551	Onsemi	NPN	SINGLE	YES	100 MHz	.225 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	160 V		-55 Cel		TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BSR14	Onsemi	NPN	SINGLE	YES	300 MHz	.35 W	.8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns	-55 Cel	285 ns	TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SMMBT3906WT1G	Onsemi	PNP	SINGLE	YES	250 MHz		.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30			SILICON	40 V	70 ns		300 ns	MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
MMUN2214LT1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		80	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 4.7	TO-236	e3	40	260
SBC847BPDXV6T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.5 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		200	150 Cel		SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-F6	1					e3	30	260	AEC-Q101
SBC847CLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC857CWT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		420	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
2N3906BU	Onsemi	PNP	SINGLE	NO	250 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	300 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC846BM3T5G	Onsemi	NPN	SINGLE	YES	100 MHz	.64 W	.1 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel		SILICON	65 V				MATTE TIN	DUAL	R-PDSO-F3	1		Not Qualified			e3	30	260
BC557BTA	Onsemi	PNP	SINGLE	NO	150 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT4401LT3G	Onsemi	NPN	SINGLE	YES	250 MHz	.3 W	.6 A	PLASTIC/EPOXY	SWITCHING	.75 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	.225 W	40	150 Cel	6.5 pF	SILICON	40 V	255 ns	-55 Cel	35 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
SBC857BLT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC857ALT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.225 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		125	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
BC33740TA	Onsemi	NPN	SINGLE	NO	100 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		170	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC846BLT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY		.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
2N3906TFR	Onsemi	PNP	SINGLE	NO	250 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		300 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SBC847BPDW1T1G	Onsemi	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	100 MHz	.38 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	2	6	SMALL OUTLINE	BIP General Purpose Small Signal		200	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G6	1					e3	30	260	AEC-Q101
MMBT3904LT1	Onsemi	NPN	SINGLE	YES	300 MHz	.225 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
MMPQ6700	Onsemi	NPN AND PNP	SEPARATE, 4 ELEMENTS	YES	200 MHz		.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	4	16	SMALL OUTLINE	BIP General Purpose Small Signal		70			SILICON	40 V				MATTE TIN	DUAL	R-PDSO-G16	3		Not Qualified			e3	30	260
MMUN2233LT1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.2 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		80	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 10	TO-236	e3	40	260
PN2907ATFR	Onsemi	PNP	SINGLE	NO	200 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		50	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC33740BU	Onsemi	NPN	SINGLE	NO	100 MHz	.625 W	.8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		170	150 Cel		SILICON	45 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SMMBTA42LT3G	Onsemi	NPN	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
BC856BWT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.15 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.65 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		220	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260

Onsemi Small Signal Bipolar Junction Transistors (BJT) 2,400+

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