RF Power Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
AM83135-001	STMicroelectronics	NPN	SINGLE	YES			.45 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	5.2 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		10	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
MSC81350M	STMicroelectronics	NPN	SINGLE	YES		720 W	19.8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1729(TH416)	STMicroelectronics	NPN	SINGLE	YES			12 A	PLASTIC/EPOXY			FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT				200 Cel		SILICON	35 V		RADIAL	O-PRFM-F4		Not Qualified
AM81214-030	STMicroelectronics	NPN	SINGLE	YES		63 W	2.75 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7.2 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1542-04	STMicroelectronics	NPN	SINGLE	YES		1350 W	40 A	CERAMIC, METAL-SEALED COFIRED			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		5	200 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
AM1214-100	STMicroelectronics	NPN	SINGLE	YES		270 W	13 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	6 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM1517-025	STMicroelectronics	NPN	SINGLE	YES		45 W	2.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8.5 dB	FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified
SD1476	STMicroelectronics	NPN	COMMON EMITTER, 2 ELEMENTS	YES			25 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		10	200 Cel	220 pF	SILICON	40 V		DUAL	R-PDFM-F4	EMITTER	Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
SD1275	STMicroelectronics	NPN	SINGLE	NO		70 W	8 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		20	200 Cel		SILICON	16 V	GOLD	RADIAL	O-PRPM-F4		Not Qualified		e4
AM80912-085	STMicroelectronics	NPN	SINGLE	YES		300 W	8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7.5 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		20	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
SD1487	STMicroelectronics	NPN	SINGLE	NO			20 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	BIP RF Small Signal			200 Cel		SILICON	18 V		RADIAL	O-PRFM-F4		Not Qualified	WITH EMITTER BALLASTING RESISTORS
MSC82304	STMicroelectronics	NPN	SINGLE	NO		11.5 W	.6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	S BAND	2	FLANGE MOUNT	Other Transistors		30	200 Cel	5 pF	SILICON			RADIAL	O-CRFM-F2	BASE	Not Qualified
SD1530-01	STMicroelectronics	NPN	SINGLE	YES		87.5 W	2.6 A	PLASTIC/EPOXY	SWITCHING		FLAT	ROUND	1	L BAND	4	DISK BUTTON	Other Transistors			200 Cel		SILICON			RADIAL	O-PRDB-F4	BASE	Not Qualified	WITH EMITTER BALLASTING RESISTORS
SD1728-15	STMicroelectronics	NPN	SINGLE	YES			40 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT					360 pF	SILICON	55 V		RADIAL	O-PRFM-F4		Not Qualified
SD4010	STMicroelectronics	NPN	COMMON EMITTER, 2 ELEMENTS	YES		88.8 W	1.35 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		25	200 Cel	36 pF	SILICON	28 V		DUAL	R-CDFM-F4	EMITTER	Not Qualified	HIGH EFFICIENCY
SD4011	STMicroelectronics	NPN	SINGLE	NO		31.8 W	1.59 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		20	200 Cel	20 pF	SILICON	20 V	GOLD	RADIAL	O-PRPM-F4		Not Qualified	HIGH EFFICIENCY	e4
SD1528-08	STMicroelectronics	NPN	SINGLE	YES		87.5 W	1.5 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors			200 Cel		SILICON	65 V		DUAL	S-CDFM-F2	BASE	Not Qualified	WITH EMITTER BALLASTING RESISTORS
SD1899	STMicroelectronics	NPN	SINGLE	YES		73 W	3.5 A	PLASTIC/EPOXY	AMPLIFIER	9.3 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	64.8 W	15	200 Cel		SILICON			DUAL	R-PDFM-F2	BASE	Not Qualified
AM80610-030	STMicroelectronics	NPN	SINGLE	YES		57 W	3 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
MSC1004MP	STMicroelectronics	NPN	SINGLE	YES		18 W	.65 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	L BAND	4	DISK BUTTON	Other Transistors		30	200 Cel		SILICON			RADIAL	O-PRDB-F4	BASE	Not Qualified	HIGH RELIABILITY
SD1731	STMicroelectronics	NPN	SINGLE	NO		233 W	20 A	PLASTIC/EPOXY			FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON	55 V	NICKEL	RADIAL	O-PRFM-F4		Not Qualified
SD1285	STMicroelectronics	NPN	SINGLE	NO		80 W	4.5 A	PLASTIC/EPOXY			FLAT	ROUND	1		4	FLANGE MOUNT	Other Transistors		10	200 Cel		SILICON	18 V		RADIAL	O-PRFM-F4		Not Qualified
SD1542	STMicroelectronics	NPN	SINGLE	YES		1300 W	40 A	CERAMIC, METAL-SEALED COFIRED			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors			175 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	WITH EMITTER BALLASTING RESISTORS
SD1492	STMicroelectronics	NPN	SINGLE	YES		318 W	25 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		15	200 Cel	100 pF	SILICON	30 V		DUAL	R-PDFM-F4	EMITTER	Not Qualified	WITH EMITTER BALLASTING RESISTORS
SD1425	STMicroelectronics	NPN	SINGLE	YES		43 W	.15 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		20	200 Cel	48 pF	SILICON			DUAL	R-CDFM-F6		Not Qualified	HIGH RELIABILITY
SD1728F	STMicroelectronics	NPN	SINGLE	YES			40 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT				200 Cel	360 pF	SILICON	55 V		RADIAL	O-PRFM-F4		Not Qualified
SD1732	STMicroelectronics	NPN	COMMON EMITTER, 2 ELEMENTS	YES		65 W	.85 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		10	200 Cel	20 pF	SILICON	25 V	NICKEL	DUAL	R-PDFM-F4	EMITTER	Not Qualified	HIGH EFFICIENCY
AM1011-300	STMicroelectronics	NPN	SINGLE	YES		1070 W	36 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		10	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
MSC81058	STMicroelectronics	NPN	SINGLE	NO		29 W	1 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel	10 pF	SILICON			RADIAL	O-CRFM-F2	BASE	Not Qualified
SD1727	STMicroelectronics	NPN	SINGLE	NO		233 W	10 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		18	200 Cel	220 pF	SILICON	55 V	GOLD	RADIAL	O-PRPM-F4		Not Qualified		e4
MSC82005	STMicroelectronics	NPN	SINGLE	NO		29 W	1 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel	10 pF	SILICON			RADIAL	O-CRFM-F2	BASE	Not Qualified
SD1405	STMicroelectronics	NPN	SINGLE	NO			20 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	BIP RF Small Signal			200 Cel		SILICON	18 V		RADIAL	O-PRFM-F4		Not Qualified			NOT SPECIFIED	NOT SPECIFIED
AM81720-012	STMicroelectronics	NPN	SINGLE	YES		31.8 W	1.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	7.4 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
SD1855	STMicroelectronics	NPN	SINGLE	NO		20.6 W	.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON	25 V		RADIAL	O-CRFM-F2	EMITTER	Not Qualified	HIGH RELIABILITY
SD1729	STMicroelectronics	NPN	SINGLE	NO		175 W	12 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		18	200 Cel		SILICON	35 V	NICKEL	RADIAL	O-PRFM-F4		Not Qualified
MSC83305	STMicroelectronics	NPN	SINGLE	NO		17.6 W	.7 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	S BAND	2	FLANGE MOUNT	Other Transistors		30	200 Cel	7.5 pF	SILICON			RADIAL	O-CRFM-F2	BASE	Not Qualified
SD1414-12	STMicroelectronics	NPN	SINGLE	YES		150 W	9 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		20	200 Cel		SILICON	18 V		DUAL	R-PDFM-F6	ISOLATED	Not Qualified
AM0912-150	STMicroelectronics	NPN	SINGLE	YES		300 W	16.5 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7.5 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		20	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified
SD1015	STMicroelectronics	NPN	SINGLE	NO	250 MHz	40 W	4 A	UNSPECIFIED	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		5	175 Cel	50 pF	SILICON	35 V		RADIAL	O-XRPM-F4
SD1650	STMicroelectronics	NPN	SINGLE	YES		175 W	.3 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		20	200 Cel		SILICON	28 V		DUAL	R-PDFM-F6		Not Qualified	HIGH RELIABILITY
SD1480	STMicroelectronics	NPN	SINGLE	YES		270 W	20 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		20	175 Cel	250 pF	SILICON	36 V	GOLD	UNSPECIFIED	O-PXFM-F6		Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR	e4
SD1733	STMicroelectronics	NPN	SINGLE	NO		127 W	3.25 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		19	200 Cel	100 pF	SILICON	55 V		RADIAL	O-PRPM-F4		Not Qualified
AM81214-060	STMicroelectronics	NPN	SINGLE	YES		107 W	5 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	6.6 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
SD1534-08	STMicroelectronics	NPN	SINGLE	YES		219 W	5.5 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		10	200 Cel		SILICON			DUAL	S-CDFM-F2	BASE	Not Qualified
AM82731-003	STMicroelectronics	NPN	SINGLE	YES		23 W	.9 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	5.7 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors		10	250 Cel		SILICON			DUAL	R-CDFM-F2	BASE	Not Qualified	HIGH RELIABILITY
AM1416-220	STMicroelectronics	NPN		YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR		L BAND	2	FLANGE MOUNT						SILICON			DUAL	R-CDFM-F2		Not Qualified	HIGH RELIABILITY
SD1490	STMicroelectronics	NPN	SINGLE	YES		135 W	8 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		10	200 Cel	80 pF	SILICON	30 V	NICKEL	DUAL	R-PDFM-F4	EMITTER	Not Qualified	HIGH EFFICIENCY
RF3L05150CB4	STMicroelectronics

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.