Image shown is a representation only.
| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLT50,115 |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING; |
| Datasheet | BLT50,115 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .5 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 2 W |
| Moisture Sensitivity Level (MSL): | 1 |
| Minimum Power Gain (Gp): | 10 dB |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 25 |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 10 V |
| Additional Features: | HIGH RELIABILITY |
| Maximum Collector-Base Capacitance: | 6 pF |
| Peak Reflow Temperature (C): | 260 |
