Image shown is a representation only.
| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 2SC2290 |
| Description | NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 20 A; |
| Datasheet | 2SC2290 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 100 MHz |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Collector Current (IC): | 20 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 175 W |
| Terminal Position: | RADIAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | O-CRFM-F4 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | FLAT |
| Highest Frequency Band: | HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Power Dissipation Ambient: | 175 W |
| Minimum Power Gain (Gp): | 11.8 dB |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 10 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 18 V |
| Maximum Collector-Base Capacitance: | 500 pF |
