RF Power Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2N4440	Texas Instruments	NPN	SINGLE	NO	400 MHz	11 W	1.5 A	METAL			WIRE	ROUND	1		3	POST/STUD MOUNT	Other Transistors	10	175 Cel		SILICON	40 V		UPPER	O-MUPM-W3			Not Qualified		TO-60
MAX2602E/W	Analog Devices	NPN	SINGLE WITH BUILT-IN DIODE	YES			1.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE			150 Cel		SILICON	15 V		DUAL	R-PDSO-G8			Not Qualified
MAX2601ESA+T	Analog Devices	NPN	SINGLE	YES			1.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	10	SMALL OUTLINE	Other Transistors	100	150 Cel		SILICON	15 V	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G10	1		Not Qualified			e3	30	260
MAX2601ESA+	Analog Devices	NPN	SINGLE	YES			1.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE	Other Transistors	100	150 Cel		SILICON	15 V	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
MAX2602ESA+T	Analog Devices	NPN	SINGLE WITH BUILT-IN DIODE	YES			1.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE	Other Transistors	100	150 Cel		SILICON	15 V	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
MAX2602ESA+	Analog Devices	NPN	SINGLE WITH BUILT-IN DIODE	YES			1.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	8	SMALL OUTLINE	Other Transistors	100	150 Cel		SILICON	15 V	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
2SA1403D	Onsemi	PNP	SINGLE	NO	800 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1		3	FLANGE MOUNT					SILICON	60 V	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	SINGLE	R-PSFM-T3			Not Qualified		TO-126
2SC3952D	Onsemi	NPN	SINGLE	NO	700 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1		3	FLANGE MOUNT					SILICON	70 V	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	SINGLE	R-PSFM-T3			Not Qualified
MC3346P	Onsemi	NPN	COMPLEX	NO	550 MHz		.05 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	5		14	IN-LINE					SILICON	15 V	TIN LEAD	DUAL	R-PDIP-T14			Not Qualified			e0
MC3346D	Onsemi	NPN	COMPLEX	YES	550 MHz		.05 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	5		14	SMALL OUTLINE					SILICON	15 V	TIN LEAD	DUAL	R-PDSO-G14			Not Qualified			e0		235
MC3346DR2	Onsemi	NPN	COMPLEX	YES	550 MHz		.05 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	5		14	SMALL OUTLINE					SILICON	15 V	TIN LEAD	DUAL	R-PDSO-G14	1		Not Qualified			e0		235
2SA1537D	Onsemi	PNP	SINGLE	NO	700 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1		3	FLANGE MOUNT					SILICON	70 V	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	SINGLE	R-PSFM-T3			Not Qualified
2SA1403E	Onsemi	PNP	SINGLE	NO	800 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1		3	FLANGE MOUNT					SILICON	60 V	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	SINGLE	R-PSFM-T3			Not Qualified		TO-126
2SC3597E	Onsemi	NPN	SINGLE	NO	800 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1		3	FLANGE MOUNT					SILICON	60 V	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	SINGLE	R-PSFM-T3			Not Qualified		TO-126
2SC3597D	Onsemi	NPN	SINGLE	NO	800 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1		3	FLANGE MOUNT					SILICON	60 V	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	SINGLE	R-PSFM-T3			Not Qualified		TO-126
SD1455	STMicroelectronics	NPN	SINGLE	NO		140 W	8 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors	10	175 Cel	85 pF	SILICON	35 V	GOLD	RADIAL	O-PRPM-F4			Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR		e4
AM1214-200	STMicroelectronics	NPN	SINGLE	YES		575 W	16 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	7 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	10	250 Cel		SILICON	40 V		DUAL	R-CDFM-F2		BASE	Not Qualified	HIGH RELIABILITY
SD1460	STMicroelectronics	NPN	SINGLE	NO	108 MHz	160 W	16 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	20	200 Cel	150 pF	SILICON	25 V		RADIAL	O-PRFM-F4			Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
SD1434	STMicroelectronics	NPN	SINGLE	YES		175 W	10 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		200 Cel		SILICON	16 V		UNSPECIFIED	O-PXFM-F6			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SD1437	STMicroelectronics	NPN	SINGLE	NO		19.4 W	.45 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors	10	200 Cel	10 pF	SILICON	25 V		RADIAL	O-PRPM-F4			Not Qualified	HIGH EFFICIENCY
MSC81250M	STMicroelectronics	NPN	SINGLE	YES		600 W	17.8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel		SILICON			DUAL	S-CDFM-F2		BASE	Not Qualified	HIGH RELIABILITY
MSC81005	STMicroelectronics	NPN	SINGLE	NO		18.8 W	.6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	L BAND	2	POST/STUD MOUNT	Other Transistors	15	200 Cel	6.5 pF	SILICON			RADIAL	O-CRPM-F2		BASE	Not Qualified
MSC82306	STMicroelectronics	NPN	SINGLE	NO		16.7 W	.9 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	S BAND	2	FLANGE MOUNT	Other Transistors	30	200 Cel	7 pF	SILICON			RADIAL	O-CRFM-F2		BASE	Not Qualified
SD1439	STMicroelectronics	NPN	SINGLE	NO		8.75 W	.22 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors	15	200 Cel	5 pF	SILICON	24 V		RADIAL	O-PRPM-F4			Not Qualified	HIGH EFFICIENCY
SD1411	STMicroelectronics	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		330 W	40 A	PLASTIC/EPOXY			FLAT	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors	15	200 Cel	360 pF	SILICON	55 V		DUAL	R-PDFM-F6			Not Qualified	HIGH RELIABILITY
AM82731-012	STMicroelectronics	NPN	SINGLE	YES		50 W	2 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	6 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors	30	200 Cel		SILICON			DUAL	R-CDFM-F2		BASE	Not Qualified	HIGH RELIABILITY
MSC81111	STMicroelectronics	NPN	SINGLE	NO		18.8 W	.6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	ROUND	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel	6.5 pF	SILICON			RADIAL	O-CRFM-F2		BASE	Not Qualified
AM0912-080	STMicroelectronics	NPN	SINGLE	YES		220 W	7 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	8.4 dB	FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	20	250 Cel		SILICON			DUAL	R-CDFM-F2		BASE	Not Qualified
AM0608-200	STMicroelectronics	NPN	SINGLE	YES		875 W	16 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	8.7 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	2	FLANGE MOUNT	Other Transistors	15	250 Cel		SILICON			DUAL	R-CDFM-F2		BASE	Not Qualified
AM81719-030	STMicroelectronics	NPN	SINGLE	YES		67 W	2.67 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	6.7 dB	FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel		SILICON			DUAL	S-CDFM-F2		BASE	Not Qualified	HIGH RELIABILITY
SD1414	STMicroelectronics	NPN	SINGLE	YES		150 W	9 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		150 Cel		SILICON	18 V		DUAL	R-PDFM-F6			Not Qualified	HIGH RELIABILITY
SD1534-01	STMicroelectronics	NPN	SINGLE	YES		219 W	5.5 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	L BAND	4	DISK BUTTON	Other Transistors	10	200 Cel		SILICON			RADIAL	O-PRDB-F4			Not Qualified	WITH EMITTER BALLASTING RESISTORS
SD1528-06	STMicroelectronics	NPN	SINGLE	YES		87.5 W	1.5 A	PLASTIC/EPOXY	SWITCHING		FLAT	ROUND	1	L BAND	4	DISK BUTTON	Other Transistors	10	200 Cel		SILICON			RADIAL	O-PRDB-F4		BASE	Not Qualified	WITH EMITTER BALLASTING RESISTORS
SD1727(THX15)	STMicroelectronics	NPN	SINGLE	NO			10 A	PLASTIC/EPOXY			FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT				220 pF	SILICON	55 V		RADIAL	O-PRPM-F4			Not Qualified
SD1540	STMicroelectronics	NPN	SINGLE	YES			22 A	PLASTIC/EPOXY	SWITCHING		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors		175 Cel		SILICON			DUAL	S-PDFM-F2		BASE	Not Qualified
AM82731-025	STMicroelectronics	NPN	SINGLE	YES		100 W	4 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	6.2 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors	30	250 Cel		SILICON			DUAL	R-CDFM-F2		BASE	Not Qualified	HIGH RELIABILITY
SD1391	STMicroelectronics	NPN	SINGLE	YES	470 MHz	29 W	2.5 A	METAL	AMPLIFIER		FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors	10	200 Cel	24 pF	SILICON	25 V		DUAL	R-MDFM-F6			Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
SD1407	STMicroelectronics	NPN	SINGLE	NO		270 W	20 A	PLASTIC/EPOXY			FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	10	200 Cel		SILICON	36 V	NICKEL	RADIAL	O-PRFM-F4			Not Qualified					260
SD1488	STMicroelectronics	NPN	SINGLE	YES		145 W	8 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors		150 Cel		SILICON	16 V	GOLD	UNSPECIFIED	O-PXFM-F6			Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR		e4
SD1893-03	STMicroelectronics	NPN	SINGLE	NO		43 W	4.4 A	CERAMIC, METAL-SEALED COFIRED			FLAT	ROUND	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel		SILICON	15 V		RADIAL	O-CRFM-F2		BASE	Not Qualified	HIGH RELIABILITY
SD1732(TDS595)	STMicroelectronics	NPN	COMMON EMITTER, 2 ELEMENTS	YES			2.6 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT			200 Cel	20 pF	SILICON	18 V		DUAL	R-PDFM-F4		EMITTER	Not Qualified	WITH EMITTER BALLASTING RESISTORS
SD1541-01	STMicroelectronics	NPN	SINGLE	YES		1460 W	22 A	CERAMIC, METAL-SEALED COFIRED			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	5	200 Cel		SILICON			DUAL	R-CDFM-F2		BASE	Not Qualified	WITH EMITTER BALLASTING RESISTORS
AM83135-015	STMicroelectronics	NPN	SINGLE	YES		71 W	3 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING	5.2 dB	FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT	Other Transistors	30	250 Cel		SILICON			DUAL	R-CDFM-F2		BASE	Not Qualified	HIGH RELIABILITY
MSC81035MP	STMicroelectronics	NPN	SINGLE	YES		150 W	3 A	PLASTIC/EPOXY	SWITCHING		FLAT	ROUND	1	L BAND	4	DISK BUTTON	Other Transistors	15	200 Cel		SILICON			RADIAL	O-PRDB-F4		BASE	Not Qualified	HIGH RELIABILITY
SD1888-03	STMicroelectronics	NPN	SINGLE	YES		50 W	2.6 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel		SILICON	12 V		DUAL	R-PDFM-F2		BASE	Not Qualified	HIGH RELIABILITY
AM81416-020	STMicroelectronics	NPN	SINGLE	YES		50 W	2.8 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors	15	200 Cel		SILICON			DUAL	R-CDFM-F2			Not Qualified	HIGH RELIABILITY
SD1457	STMicroelectronics	NPN	SINGLE	NO	108 MHz	100 W	10 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	20	175 Cel	85 pF	SILICON	30 V	NICKEL	RADIAL	O-PRFM-F4			Not Qualified	DIFFUSED EMITTER BALLAST RESISTOR
SD1540-08	STMicroelectronics	NPN	SINGLE	YES		875 W	22 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING		FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT	Other Transistors	10	200 Cel		SILICON			DUAL	S-CDFM-F2		BASE	Not Qualified

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.