Sirenza Microdevices - SGL-0363Z

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 130 MHz; Characteristic Impedance: 50 ohm;

Broadcom's MGA-62563-TR1 is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and requires 3/5V power supplies, drawing a max current of 77mA.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 1100 MHz; Power Supplies (V): 3.8;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 85 mA;

WIDE BAND LOW POWER;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC16,.24SQ,40/32;

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3/5; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;

Analog Devices' HMC606LC5TR-R5 is a wide band low power RF amplifier with 9.5 dB gain, suitable for frequencies ranging from 2-18 GHz. It can handle up to 15 dBm CW input power and operates in temperatures from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact component design.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

SGA3463Z by Qorvo is a wide band low power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

WIDE BAND LOW POWER; Minimum Operating Frequency: 1000 MHz; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT;

HMC637ALP5E by Analog Devices is a wide band medium power RF amplifier with a gain of 12 dB. It has a max input power of 25 dBm and operates in temperatures ranging from -40 to 85°C. This component is suitable for applications requiring amplification in the frequency range of 0-6000 MHz.

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAN; Characteristic Impedance: 50 ohm;

WIDE BAND MEDIUM POWER; Technology: GAAS; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 6; JESD-609 Code: e3/e4;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 5; Technology: GAAS; Package Equivalence Code: DIE OR CHIP; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 3000 MHz;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3; Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT;