MRAMs | Vyrian

Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M3032316035NX0PBCY	Renesas Electronics	MRAM	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	10	.75 mm	105 Cel	2MX16	2M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	100000000000000 Write/Erase Cycles	10 mm	33554432 bit	2.7 V	e1	260	.007 Amp	10 mm	35 ns
M3032316045NX0PBCY	Renesas Electronics	MRAM	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	10	.75 mm	105 Cel	2MX16	2M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	100000000000000 Write/Erase Cycles	10 mm	33554432 bit	2.7 V	e1	260	.007 Amp	10 mm	45 ns
M3032316035NX0IBCR	Renesas Electronics	MRAM	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	10	.75 mm	85 Cel	2MX16	2M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	100000000000000 Write/Erase Cycles	10 mm	33554432 bit	2.7 V	e1	260	.007 Amp	10 mm	35 ns
M3032316035NX0PBCR	Renesas Electronics	MRAM	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	10	.75 mm	105 Cel	2MX16	2M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	100000000000000 Write/Erase Cycles	10 mm	33554432 bit	2.7 V	e1	260	.007 Amp	10 mm	35 ns
M3032316045NX0PBCR	Renesas Electronics	MRAM	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	10	.75 mm	105 Cel	2MX16	2M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	100000000000000 Write/Erase Cycles	10 mm	33554432 bit	2.7 V	e1	260	.007 Amp	10 mm	45 ns
M3032316035NX0IBCY	Renesas Electronics	MRAM	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	10	.75 mm	85 Cel	2MX16	2M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	100000000000000 Write/Erase Cycles	10 mm	33554432 bit	2.7 V	e1	260	.007 Amp	10 mm	35 ns