FRAMs

Reset All

Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
FM24CL64-GTR	Ramtron International	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.4 mA	8192 words	3		8	SMALL OUTLINE	SOP8,.25		45	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	1	3.65 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	I2C	65536 bit	2.7 V	UNLIMITED READ/WRITE CYCLES				.000001 Amp	4.9 mm
FM24V05-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	65536 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	64KX8	64K	2 V	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm	Not Qualified	I2C	524288 bit	2 V	also operates with 1 MHZ ; 2.5KV ESD AVAILABLE	e3	20	260	.00015 Amp	4.889 mm
FM25640-S	Ramtron International	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	45	1.27 mm	85 Cel	8KX8	8K	4.5 V	-40 Cel	TIN LEAD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	SPI	65536 bit	4.5 V		e0	40	260	.00001 Amp	4.9 mm
MB85RS256TYPNF-G-BCERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10.9	1.27 mm	125 Cel	32KX8	32K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	33 MHz	3.9 mm		SPI	262144 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	4.89 mm
MB85RS512TPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	64KX8	64K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	30 MHz	3.9 mm		SPI	524288 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00012 Amp	5.05 mm
MB85RS64TPNF-G-JNERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		40.2	1.27 mm	85 Cel	8KX8	8K	1.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	10 MHz	3.9 mm		SPI	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.000012 Amp	5.05 mm
MB85RS64TUPNF-G-JNERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	1.8 V	-55 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	10 MHz	3.9 mm		SPI	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000012 Amp	5.05 mm
MB85RS64VYPNF-GS-BCE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	8192 words			8	SMALL OUTLINE	SOP8,.25		3.3	1.27 mm	125 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	5.5 V	1.73 mm	10000000000000 Write/Erase Cycles	33 MHz	3.9 mm		SPI	65536 bit	2.7 V	DATA RETENTION TIME @ 125 DEGREE CENTIGRADE				.00003 Amp	4.89 mm
FM1808B-SG	Infineon Technologies	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.4	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	4.5 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm	100000000000000 Write/Erase Cycles		7.505 mm	Not Qualified		262144 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		20	260	.00005 Amp	17.905 mm	70 ns
MB85RS64TPN-G-AMEWE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	8192 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	85 Cel	8KX8	8K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		3.6 V	.75 mm	10000000000000 Write/Erase Cycles	10 MHz	2 mm		SPI	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000012 Amp	3 mm
FM24W256-EG	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	2 mm	100000000000000 Write/Erase Cycles	1 MHz	5.23 mm		I2C	262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		20	260	.00003 Amp	5.28 mm
CY15B108QN-20LPXIT	Infineon Technologies	FRAM	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3.2 mA	1048576 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.12,25		10	.65 mm	85 Cel	1MX8	1M	1.8 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.8 V	2kv ESD available	e4		260	.00012 Amp	3.28 mm
CY15B256J-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	32KX8	32K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm		I2C	262144 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE			260	.0005 Amp	4.889 mm
FM25V20-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000000000000 Write/Erase Cycles	40 MHz	5.23 mm		SPI	2097152 bit	2.7 V	DATA RETENTIALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY; 4KV ESD AVAILABLE				.00025 Amp	5.28 mm
MB85R4M2TFN-G-JAE2	Fujitsu	FRAM	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	10000000000000 Write/Erase Cycles		10.16 mm			4194304 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00015 Amp	18.41 mm	185 ns
MB85RDP16LXPN-G-AMEWE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.7 mA	2048 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	105 Cel	2KX8	2K	1.65 V	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		1.95 V	.75 mm	10000000000000 Write/Erase Cycles	15 MHz	2 mm		SPI	16384 bit	1.65 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.000011 Amp	3 mm
MB85RS256APNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	25 MHz	3.9 mm	Not Qualified	SPI	262144 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	5.05 mm
MB85RS256TYPNF-G-AWERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10.9	1.27 mm	125 Cel	32KX8	32K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	33 MHz	3.9 mm		SPI	262144 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		10	260	.00005 Amp	4.9 mm
MB85RS2MLYPNF-GS-AWE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3.5 mA	262144 words	1.8		8	SMALL OUTLINE	SOP8,.25		2.75	1.27 mm	125 Cel	256KX8	256K	1.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		1.95 V	1.75 mm	10000000000000 Write/Erase Cycles	50 MHz	3.9 mm		SPI	2097152 bit	1.7 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.0002 Amp	4.9 mm
MB85RS2MTAPNF-G-AWE2	Sumitomo Electric Industries	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE, 1.7V TO 2.7V @ 33MHz				.00005 Amp	4.9 mm
MB85RS2MTAPNF-G-BDE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	256KX8	256K	1.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	2097152 bit	1.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	4.89 mm
MB85RS2MTYPNF-G-AWERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		2.75	1.27 mm	85 Cel	256KX8	256K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	50 MHz	3.9 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.00022 Amp	4.9 mm
MB85RS2MTYPNF-GS-AWERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	4 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		2.75	1.27 mm	125 Cel	256KX8	256K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	50 MHz	3.9 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		10	260	.00022 Amp	4.9 mm
MB89R118C1-DIAP15-P1	Fujitsu	FRAM-EMBEDDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD				2048 words			8	UNCASED CHIP	DIE OR CHIP		10		85 Cel	2KX8	2K		-20 Cel		UPPER		X-XUUC-N				1000000000000 Write/Erase Cycles					16384 bit		DATA RETENTION TIME @ 85 DEGREE CENTIGRADE
CY15B108QI-20LPXIT	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1.75 mA	1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.2,25		10	.65 mm	85 Cel	1MX8	1M	1.71 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	1.89 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.71 V	2kv ESD available	e4	10	260	.00011 Amp	3.28 mm
CY15B256Q-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		38	1.27 mm	125 Cel	32KX8	32K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	33 MHz	3.8985 mm		SPI	262144 bit	2.7 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.0005 Amp	4.889 mm
CY15V104QN-50LPXI	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3.7 mA	524288 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,25		10	.65 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	1.89 V	.55 mm	1000000000000000 Write/Erase Cycles	50 MHz	3.23 mm		SPI	4194304 bit	1.71 V	2kv ESD available	e4		260	.000065 Amp	3.28 mm
FM21LD16-60-BG	Cypress Semiconductor	FRAM	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	10	.75 mm	85 Cel	128KX16	128K	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		6 mm	Not Qualified		2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE;2.5KV ESD AVAILABLE;ALSO CONFIGURABLE AS 256KX8	e1		260	.00027 Amp	8 mm	110 ns
FM24V01-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	16KX8	16K	2 V	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm	Not Qualified	I2C	131072 bit	2 V	also operates with 1 MHZ ; 3.5KV ESD AVAILABLE	e3	30	260	.00015 Amp	4.889 mm
FM24V02-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	2 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm	Not Qualified	I2C	262144 bit	2 V	also operates with 1 MHZ ; 3.5KV ESD AVAILABLE	e4	20	260	.00015 Amp	4.889 mm
MB85R256FPF-G-BNDE1	Fujitsu	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	32768 words	3.3		8	SMALL OUTLINE	SOP28,.45		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel		DUAL		R-PDSO-G28		3.6 V	2.8 mm	1000000000000 Write/Erase Cycles		8.6 mm			262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00005 Amp	17.75 mm	70 ns
MB85R256FPFCN-G-BNDE1	Fujitsu	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	TSSOP28,.53,22	SRAMs	10	.55 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel		DUAL		R-PDSO-G28		3.6 V	1.2 mm	1000000000000 Write/Erase Cycles		8 mm	Not Qualified		262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	11.8 mm	70 ns
MB85RC128APNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.375 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	131072 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00002 Amp	5.05 mm
MB85RC64APNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.375 mA	8192 words	3.3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	I2C	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00002 Amp	5.05 mm
MB85RC64VPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.13 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	65536 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	5.05 mm
MB85RS128BPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	6 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	33 MHz	3.9 mm		SPI	131072 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00005 Amp	5.05 mm
MB85RS64VPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	SPI	65536 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00002 Amp	5.05 mm
CYPT15B102Q-GGMB	Infineon Technologies	FRAM	16	SOP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE	SOP16,.4		11	1.27 mm	125 Cel	256KX8	256K	2 V	-55 Cel		DUAL	HARDWARE/SOFTWARE	R-CDSO-G16	1	3.6 V	2.9 mm	10000000000000 Write/Erase Cycles	25 MHz	7.45 mm		SPI	2097152 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.006 Amp	10.45 mm
FM1808-120-S	Infineon Technologies	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	5		8	SMALL OUTLINE	SOP28,.4		10	1.27 mm	85 Cel	32KX8	32K	4.5 V	-40 Cel		DUAL		R-PDSO-G28		5.5 V	2.65 mm	10000000000 Write/Erase Cycles		7.5 mm			262144 bit	4.5 V					.00002 Amp	17.9 mm	120 ns
FM1808B-SGTR	Infineon Technologies	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.4	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	4.5 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm	100000000000000 Write/Erase Cycles		7.505 mm	Not Qualified		262144 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00005 Amp	17.905 mm	70 ns
WM72016-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.025 mA	1024 words	2.5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25		20	.65 mm	85 Cel	1KX16	1K	2.1 V	-40 Cel		DUAL	HARDWARE	S-PDSO-N8	1	3 V	.65 mm	100000000000000 Write/Erase Cycles		3 mm			16384 bit	2.1 V	500KV ESD AVAILABLE					3 mm
M810078A001	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	1.75 mA	1048576 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,25		10	.65 mm	85 Cel	1MX8	1M	1.8 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00012 Amp	3.28 mm
FM22LD16-55-BGTR	Infineon Technologies	FRAM	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	12 mA	262144 words	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		10	.75 mm	85 Cel	256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM	SOFTWARE	R-PBGA-B48	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		6 mm			4194304 bit	2.7 V		e1		260	.00027 Amp	8 mm	110 ns
WM71016-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		1024 words			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25		20	.65 mm	85 Cel	1KX16	1K		-40 Cel		DUAL		S-PDSO-N8			.65 mm	100000000000000 Write/Erase Cycles		3 mm			16384 bit		500KV ESD AVAILABLE					3 mm
FM1808-120-P	Infineon Technologies	FRAM	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	5		8	IN-LINE	DIP28,.6		10	2.54 mm	85 Cel	32KX8	32K	4.5 V	-40 Cel		DUAL		R-PDIP-T28		5.5 V	6.35 mm	10000000000 Write/Erase Cycles		15.24 mm			262144 bit	4.5 V					.00002 Amp	37.4 mm	120 ns
WM71008-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		512 words			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25		20	.65 mm	85 Cel	512X16	512		-40 Cel		DUAL		S-PDSO-N8			.65 mm	100000000000000 Write/Erase Cycles		3 mm			8192 bit		500KV ESD AVAILABLE					3 mm
WM71004-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		256 words			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25		20	.65 mm	85 Cel	256X16	256		-40 Cel		DUAL		S-PDSO-N8			.65 mm	100000000000000 Write/Erase Cycles		3 mm			4096 bit		500KV ESD AVAILABLE					3 mm
FM22LD16-55-BG	Infineon Technologies	FRAM	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	12 mA	262144 words	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		10	.75 mm	85 Cel	256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM	SOFTWARE	R-PBGA-B48	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		6 mm			4194304 bit	2.7 V		e1		260	.00027 Amp	8 mm	110 ns

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.