FRAMs | Vyrian

Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Length
FM25040B-GA	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	8	SMALL OUTLINE	SOP8,.25	11	1.27 mm	125 Cel	512X8	512	4.5 V	-40 Cel	DUAL	HARDWARE/SOFWARE	R-PDSO-G8	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	14 MHz	3.8985 mm	SPI	4096 bit	4.5 V		.00003 Amp	4.889 mm
FM25040B-GATR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	8	SMALL OUTLINE	SOP8,.25	11	1.27 mm	125 Cel	512X8	512	4.5 V	-40 Cel	DUAL	HARDWARE/SOFWARE	R-PDSO-G8	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	14 MHz	3.8985 mm	SPI	4096 bit	4.5 V		.00003 Amp	4.889 mm
CY15V108QN-50BKXI	Infineon Technologies	FRAM	24	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	4.5 mA	1048576 words	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA24,5X5,40	10	1 mm	85 Cel	1MX8	1M	1.71 V	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	1.89 V	1.2 mm	1000000000000000 Write/Erase Cycles	50 MHz	6 mm	SPI	8388608 bit	1.71 V		.000135 Amp	8 mm
CY15B108QN-50BKXIT	Infineon Technologies	FRAM	24	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	4.5 mA	1048576 words	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA24,5X5,40	10	1 mm	85 Cel	1MX8	1M	1.8 V	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	1000000000000000 Write/Erase Cycles	50 MHz	6 mm	SPI	8388608 bit	1.8 V		.000135 Amp	8 mm
CY15B108QN-50BKXQT	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	8 mA	1048576 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	1 mm	105 Cel	1MX8	1M	1.8 V	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	50 MHz	6 mm	SPI	8388608 bit	1.8 V	2kv ESD available	.000305 Amp	8 mm
CY15V108QN-50BKXQT	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	7.5 mA	1048576 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	1 mm	105 Cel	1MX8	1M	1.71 V	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	1.89 V	1.2 mm	100000000000000 Write/Erase Cycles	50 MHz	6 mm	SPI	8388608 bit	1.71 V	2kv ESD available	.0003 Amp	8 mm
CY15V108QN-50BKXQ	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	7.5 mA	1048576 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	1 mm	105 Cel	1MX8	1M	1.71 V	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	1.89 V	1.2 mm	100000000000000 Write/Erase Cycles	50 MHz	6 mm	SPI	8388608 bit	1.71 V	2kv ESD available	.0003 Amp	8 mm
CY15V116QN-40BKXQT	Infineon Technologies	FRAM
CY15B116QN-40BKXQT	Infineon Technologies	FRAM
CY15B108QN-50BKXQ	Infineon Technologies	FRAM	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	8 mA	1048576 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	1 mm	105 Cel	1MX8	1M	1.8 V	-40 Cel	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	50 MHz	6 mm	SPI	8388608 bit	1.8 V	2kv ESD available	.000305 Amp	8 mm
CY15V108QSN-108BKXQ	Infineon Technologies	FRAM
CY15V116QSN-108BKXQ	Infineon Technologies	FRAM
CY15V108QSN-108BKXQT	Infineon Technologies	FRAM
CY15B116QSN-108BKXQT	Infineon Technologies	FRAM
CY15B108QSN-108BKXQ	Infineon Technologies	FRAM
CY15V116QSN-108BKXQT	Infineon Technologies	FRAM
CY15B108QSN-108BKXQT	Infineon Technologies	FRAM
CY15B116QSN-108BKXQ	Infineon Technologies	FRAM
CY15V104Q-PZXI	Infineon Technologies	FRAM	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	524288 words	1.8	8	IN-LINE	DIP8,.3	10	2.54 mm	85 Cel	512KX8	512K	1.71 V	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	1.89 V	4.572 mm	1000000000000000 Write/Erase Cycles	40 MHz	7.62 mm	SPI	4194304 bit	1.71 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE	.00007 Amp	9.779 mm
CY15B104Q-PZXI	Infineon Technologies	FRAM	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	524288 words	3.3	8	IN-LINE	DIP8,.3	10	2.54 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	3.6 V	4.572 mm	1000000000000000 Write/Erase Cycles	40 MHz	7.62 mm	SPI	4194304 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE	.00007 Amp	9.779 mm