FRAMs

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
FM22L16-55-TG	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	262144 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	256KX16	256K	2.7 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		10.16 mm			4194304 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE;2.5KV ESD AVAILABLE;ALSO CONFIGURABLE AS 512KX8		30	260	.00027 Amp	18.41 mm	110 ns
FM24C64B-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	8192 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	8KX8	8K		-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	5.5 V	1.727 mm	100000000000000 Write/Erase Cycles	1 MHz	3.8985 mm	Not Qualified	I2C	65536 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00001 Amp	4.889 mm
FM24CL64B-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.3 mA	8192 words	3.3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37	SRAMs	10	.95 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-N8	3	3.65 V	.85 mm	100000000000000 Write/Erase Cycles	1 MHz	4 mm	Not Qualified	I2C	65536 bit	2.7 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE			260	.000006 Amp	4.5 mm
FM24V05-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	65536 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	64KX8	64K	2 V	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm	Not Qualified	I2C	524288 bit	2 V	also operates with 1 MHZ ; 2.5KV ESD AVAILABLE	e3	20	260	.00015 Amp	4.889 mm
CY15B104Q-LHXIT	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	512KX8	512K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	4194304 bit	2 V	2kv ESD available			260	.00025 Amp	6 mm
FM24C16B-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	2048 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	2KX8	2K	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	5.5 V	1.727 mm	100000000000000 Write/Erase Cycles	1 MHz	3.8985 mm	Not Qualified	I2C	16384 bit	4.5 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE		30	260	.00001 Amp	4.889 mm
MB85RS1MTPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	9.5 mA	131072 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	128KX8	128K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	30 MHz	3.9 mm		SPI	1048576 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00012 Amp	5.05 mm
FM18W08-SG	Infineon Technologies	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	32768 words	3.3	3/5	8	SMALL OUTLINE	SOP28,.4	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm	100000000000000 Write/Erase Cycles		7.505 mm	Not Qualified		262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00005 Amp	17.905 mm	80 ns
FM25640B-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	8192 words	5		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	100000000000000 Write/Erase Cycles		3.8985 mm		SPI	65536 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00001 Amp	4.889 mm
CY15B064Q-SXET	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	8KX8	8K	3 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	16 MHz	3.8985 mm		SPI	65536 bit	3 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE			260	.00002 Amp	4.889 mm
FM24VN10-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	131072 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	128KX8	128K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm	Not Qualified	I2C	1048576 bit	2 V			30	260	.00015 Amp	4.889 mm
FM25CL64B-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37	SRAMs	10	.95 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.65 V	.8 mm	100000000000000 Write/Erase Cycles	20 MHz	4 mm	Not Qualified	SPI	65536 bit	2.7 V	2kv ESD available		30	260	.000006 Amp	4.5 mm
FM25V02-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	40 MHz	3.8985 mm	Not Qualified	SPI	262144 bit	2.7 V	also operates with 2minv supply @ 25 mhz and 1kv esd availabe	e3	40	260	.00015 Amp	4.889 mm
FM25V02-GTR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	40 MHz	3.8985 mm	Not Qualified	SPI	262144 bit	2.7 V	also operates with 2minv supply @ 25 mhz and 1kv esd availabe	e3	30	260	.00015 Amp	4.889 mm
FM25V01A-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	40 MHz	3.898 mm		SPI	131072 bit	2 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; ALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY				.00015 Amp	4.889 mm
CY15B104Q-LHXI	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	512KX8	512K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	4194304 bit	2 V	2kv ESD available			260	.00025 Amp	6 mm
FM24CL16B-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.3 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37		10	.95 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-N8	3	3.65 V	.85 mm	100000000000000 Write/Erase Cycles	1 MHz	4 mm		I2C	16384 bit	2.7 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE			260	.000006 Amp	4.5 mm
FM24V02A-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm		I2C	262144 bit	2 V	also operates with 1 MHZ ; 2KV ESD AVAILABLE	e3	30	260	.00015 Amp	4.889 mm
FM25CL64B-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37	SRAMs	10	.95 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.65 V	.8 mm	100000000000000 Write/Erase Cycles	20 MHz	4 mm	Not Qualified	SPI	65536 bit	2.7 V	2kv ESD available		30	260	.000006 Amp	4.5 mm
FM24V02A-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm		I2C	262144 bit	2 V	also operates with 1 MHZ ; 2KV ESD AVAILABLE	e3	30	260	.00015 Amp	4.889 mm
FM24CL16B-DGTR	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.3 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37		10	.95 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-N8	3	3.65 V	.85 mm	100000000000000 Write/Erase Cycles	1 MHz	4 mm		I2C	16384 bit	2.7 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE			260	.000006 Amp	4.5 mm
FM24C64B-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	8192 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	8KX8	8K		-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	5.5 V	1.727 mm	100000000000000 Write/Erase Cycles	1 MHz	3.8985 mm	Not Qualified	I2C	65536 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00001 Amp	4.889 mm
FM25C160B-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	2048 words	5		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	2KX8	2K	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	100000000000000 Write/Erase Cycles	20 MHz	3.8985 mm		SPI	16384 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00001 Amp	4.889 mm
FM24C04B-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.4 mA	512 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	512X8	512	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	5.5 V	1.727 mm	100000000000000 Write/Erase Cycles	1 MHz	3.8985 mm	Not Qualified	I2C	4096 bit	4.5 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE		30	260	.00001 Amp	4.889 mm
MB85RC256VPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.2 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000056 Amp	5.05 mm
MB85RS2MTAPNF-G-BDERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	256KX8	256K	1.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	2097152 bit	1.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	4.89 mm
MB85RS64VPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	SPI	65536 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00002 Amp	5.05 mm
CY15B108QN-40LPXI	Infineon Technologies	FRAM	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3.2 mA	1048576 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.12,25		10	.65 mm	85 Cel	1MX8	1M	1.8 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	40 MHz	3.23 mm		SPI	8388608 bit	1.8 V	2kv ESD available	e4		260	.00012 Amp	3.28 mm
CY15B108QN-40SXI	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3.2 mA	1048576 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	1MX8	1M	1.8 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	1000000000000000 Write/Erase Cycles	40 MHz	5.23 mm		SPI	8388608 bit	1.8 V	2kv ESD available			260	.00012 Amp	5.28 mm
FM25V01A-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	40 MHz	3.898 mm		SPI	131072 bit	2 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; ALSO OPERATES AT 25MHZ FROM 2.0-3.6V SUPPLY				.00015 Amp	4.889 mm
MB85RS64PNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.4 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm		SPI	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000015 Amp	5.05 mm
FM18W08-SGTR	Infineon Technologies	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	32768 words	3.3	3/5	8	SMALL OUTLINE	SOP28,.4	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm	100000000000000 Write/Erase Cycles		7.505 mm	Not Qualified		262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00005 Amp	17.905 mm	80 ns
FM25V01-GTR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	16KX8	16K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	40 MHz	3.8985 mm	Not Qualified	SPI	131072 bit	2.7 V	also operates with 2minv supply @ 25 mhz and 1kv esd availabe	e4			.00015 Amp	4.889 mm
CY15B104QSN-108SXI	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	21 mA	524288 words	3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000000000000 Write/Erase Cycles	108 MHz	5.23 mm		SPI	4194304 bit	1.8 V	2kv ESD available			260	.00035 Amp	5.28 mm
FM25L04B-GATR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	3.3		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	512X8	512	3 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	10 MHz	3.8985 mm		SPI	4096 bit	3 V					.00002 Amp	4.889 mm
MB85RC64TAPN-G-AMEWE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.19 mA	8192 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	85 Cel	8KX8	8K	1.8 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	HARDWARE	R-PDSO-N8	3	3.6 V	.75 mm	10000000000000 Write/Erase Cycles	3.4 MHz	2 mm		I2C	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE	e4			.00001 Amp	3 mm
CY15B104QN-50SXI	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3.7 mA	524288 words	3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	512KX8	512K	3 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	1000000000000000 Write/Erase Cycles	50 MHz	5.23 mm		SPI	4194304 bit	1.8 V	2kv ESD available			260	.00007 Amp	5.28 mm
FM24C16B-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	2048 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	2KX8	2K	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	5.5 V	1.727 mm	100000000000000 Write/Erase Cycles	1 MHz	3.8985 mm	Not Qualified	I2C	16384 bit	4.5 V	ALSO OPERATES WITH 0.4 MHZ AND 0.1 MHZ :2KV ESD AVAILABLE		20	260	.00001 Amp	4.889 mm
MB85RS256APNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	25 MHz	3.9 mm	Not Qualified	SPI	262144 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	5.05 mm
FM25L04B-GA	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	3.3		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	512X8	512	3 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	10 MHz	3.8985 mm		SPI	4096 bit	3 V					.00002 Amp	4.889 mm
MB85RS64PNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.4 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm		SPI	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000015 Amp	5.05 mm
MB85RC64TAPNF-G-BDERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.19 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	3.4 MHz	3.9 mm		I2C	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	4.89 mm
FM25VN10-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	128KX8	128K	2.7 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	40 MHz	3.8985 mm		SPI	1048576 bit	2.7 V	ALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY AND 4KV ESD AVAILABLE				.00015 Amp	4.889 mm
FM24C16A-G	Ramtron International	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	45	1.27 mm	85 Cel	2KX8	2K	4.5 V	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	I2C	16384 bit	4.5 V		e3		260	.00001 Amp	4.9 mm
CY15B102N-ZS60XA	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	12 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles	33 MHz	10.16 mm			2097152 bit	2 V	2kv ESD available	e4		260	.00025 Amp	18.415 mm	70 ns
FM24C64-G	Ramtron International	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1.2 mA	8192 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	45	1.27 mm	85 Cel	8KX8	8K	4.5 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	I2C	65536 bit	4.5 V				260	.00001 Amp	4.9 mm
CYRS15B102Q-GGMB	Infineon Technologies	FRAM	16	SOP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE	SOP16,.4		11	1.27 mm	125 Cel	256KX8	256K	2 V	-55 Cel		DUAL	HARDWARE/SOFTWARE	R-CDSO-G16	1	3.6 V	2.9 mm	10000000000000 Write/Erase Cycles	25 MHz	7.45 mm		SPI	2097152 bit	2 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE				.006 Amp	10.45 mm
FM28V020-SG	Infineon Technologies	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	32768 words	3.3		8	SMALL OUTLINE	SOP28,.4		10	1.27 mm	85 Cel	32KX8	32K	2 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G28	3	3.6 V	2.67 mm	100000000000000 Write/Erase Cycles		7.505 mm			262144 bit	2 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00015 Amp	17.905 mm	140 ns

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.