FRAMs

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MB85RS2MTYPNF-GS-AWE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	4 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		2.75	1.27 mm	125 Cel	256KX8	256K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	50 MHz	3.9 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		10	260	.00022 Amp	4.9 mm
FM25H20-DGTR	Cypress Semiconductor	FRAM	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	TIN	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE			260	.00027 Amp	6 mm
CY15B102N-ZS60XAT	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	12 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles	33 MHz	10.16 mm			2097152 bit	2 V	2kv ESD available	e4		260	.00025 Amp	18.415 mm	70 ns
CY15B104QSN-108SXIT	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	21 mA	524288 words	3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000000000000 Write/Erase Cycles	108 MHz	5.23 mm		SPI	4194304 bit	1.8 V	2kv ESD available			260	.00035 Amp	5.28 mm
CY15B256J-SXAT	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	32KX8	32K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm		I2C	262144 bit	2 V	2kv ESD available			260	.00015 Amp	4.889 mm
MB85RS128TYPNF-GS-BCERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10.9	1.27 mm	125 Cel	16KX8	16K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	131072 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.000045 Amp	4.89 mm
CY15B108QN-20LPXC	Infineon Technologies	FRAM	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3.2 mA	1048576 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.12,25		10	.65 mm	70 Cel	1MX8	1M	1.8 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.8 V	2kv ESD available	e4		260	.00012 Amp	3.28 mm
FM25H20-DG	Cypress Semiconductor	FRAM	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	TIN	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	40 MHz	5 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00027 Amp	6 mm
CY15B108QN-40SXIT	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3.2 mA	1048576 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	1MX8	1M	1.8 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	1000000000000000 Write/Erase Cycles	40 MHz	5.23 mm		SPI	8388608 bit	1.8 V	2kv ESD available			260	.00012 Amp	5.28 mm
CY15B108QI-20LPXC	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1.75 mA	1048576 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.2,25		10	.65 mm	70 Cel	1MX8	1M	1.8 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.8 V	2kv ESD available	e4		260	.00012 Amp	3.28 mm
FM25V01-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	16KX8	16K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	40 MHz	3.8985 mm	Not Qualified	SPI	131072 bit	2.7 V	also operates with 2minv supply @ 25 mhz and 1kv esd availabe	e4			.00015 Amp	4.889 mm
FM16W08-SGTR	Infineon Technologies	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	8192 words	3.3	3/5	8	SMALL OUTLINE	SOP28,.4	SRAMs	10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm	100000000000000 Write/Erase Cycles		7.505 mm	Not Qualified		65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00005 Amp	17.905 mm	80 ns
FM25VN10-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	128KX8	128K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	40 MHz	3.8985 mm		SPI	1048576 bit	2.7 V	ALSO OPERATES AT 25MHZ FROM 2.0-2.7V SUPPLY AND 4KV ESD AVAILABLE		30	260	.00015 Amp	4.889 mm
FM28V020-SGTR	Infineon Technologies	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	32768 words	3.3		8	SMALL OUTLINE	SOP28,.4		10	1.27 mm	85 Cel	32KX8	32K	2 V	-40 Cel	PURE TIN	DUAL		R-PDSO-G28	3	3.6 V	2.67 mm	100000000000000 Write/Erase Cycles		7.505 mm			262144 bit	2 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00015 Amp	17.905 mm	140 ns
CY15B108QI-20LPXI	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1.75 mA	1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.2,25		10	.65 mm	85 Cel	1MX8	1M	1.71 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	1.89 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.71 V	2kv ESD available	e4		260	.00011 Amp	3.28 mm
FM25H20-G	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.03 mm	100000000000000 Write/Erase Cycles	40 MHz	5.23 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		20	260	.00027 Amp	5.28 mm
MB85RS256TYPNF-GS-BCERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10.9	1.27 mm	125 Cel	32KX8	32K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	262144 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	4.89 mm
CY15B108QN-40LPXIT	Infineon Technologies	FRAM	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3.2 mA	1048576 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.12,25		10	.65 mm	85 Cel	1MX8	1M	1.8 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	40 MHz	3.23 mm		SPI	8388608 bit	1.8 V	2kv ESD available	e4		260	.00012 Amp	3.28 mm
FM24VN10-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	131072 words	3.3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	128KX8	128K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm	Not Qualified	I2C	1048576 bit	2 V			30	260	.00015 Amp	4.889 mm
FM25CL64-GTR	Ramtron International	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	7 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		45	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.65 V	1.75 mm		20 MHz	3.9 mm	Not Qualified	SPI	65536 bit	3 V	ALSO OPERATES AT 18MHZ FROM 2.7-3.0V SUPPLY; UNLIMITED READ/WRITE CYCLES		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	4.9 mm
MB85RC256VPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.2 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000056 Amp	5.05 mm
CY15B108QN-20LPXI	Infineon Technologies	FRAM	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3.2 mA	1048576 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.12,25		10	.65 mm	85 Cel	1MX8	1M	1.8 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.8 V	2kv ESD available	e4		260	.00012 Amp	3.28 mm
CY15B256J-SXA	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	32KX8	32K	2 V	-40 Cel	PURE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	100000000000000 Write/Erase Cycles	3.4 MHz	3.8985 mm		I2C	262144 bit	2 V	2kv ESD available			260	.00015 Amp	4.889 mm
MB85RC04VPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.13 mA	512 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	512X8	512	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	4096 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	5.05 mm
CY15B064J-SXET	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.34 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	8KX8	8K	3 V	-40 Cel	MATTE TIN	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	1 MHz	3.8985 mm		I2C	65536 bit	3 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE;2KV ESD AVAILABLE	e3	30	260	.00002 Amp	4.889 mm
FM25640B-G	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	8192 words	5		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	100000000000000 Write/Erase Cycles		3.8985 mm		SPI	65536 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00001 Amp	4.889 mm
MB85RC256VPF-G-JNERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.2 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	2.1 mm	1000000000000 Write/Erase Cycles	1 MHz	5.24 mm		I2C	262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000056 Amp	5.3 mm
MB85RS1MTPW-G-APEWE1	Fujitsu	FRAM	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	9.5 mA	131072 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			10		85 Cel	128KX8	128K	1.7 V	-40 Cel		BOTTOM	HARDWARE	R-PBGA-B8	3	3.6 V	.43 mm	10000000000000 Write/Erase Cycles	30 MHz	2.28 mm		SPI	1048576 bit	1.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00012 Amp	3.092 mm
MB85RC16PNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.1 mA	2048 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	16384 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000001 Amp	5.05 mm
FM28V202A-TGTR	Infineon Technologies	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD SILVER	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles		10.16 mm			2097152 bit	2 V	2kv ESD available	e4	30	260	.00025 Amp	18.415 mm	105 ns
CY15B064Q-SXE	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	8KX8	8K	3 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.727 mm	10000000000000 Write/Erase Cycles	16 MHz	3.8985 mm		SPI	65536 bit	3 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE			260	.00002 Amp	4.889 mm
CY15B104QN-20LPXI	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1.6 mA	524288 words	3		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,25		10	.65 mm	85 Cel	512KX8	512K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	4194304 bit	1.8 V	2kv ESD available	e4		260	.00007 Amp	3.28 mm
CY15B104QN-50SXAT	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6.6 mA	524288 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000000000000 Write/Erase Cycles	50 MHz	5.23 mm		SPI	4194304 bit	1.8 V	2kv ESD available			260	.000075 Amp	5.28 mm
FM25C160B-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	2048 words	5		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	2KX8	2K	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	100000000000000 Write/Erase Cycles	20 MHz	3.8985 mm		SPI	16384 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.00001 Amp	4.889 mm
FM25H20-GTR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	256KX8	256K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000000000000 Write/Erase Cycles	40 MHz	5.23 mm		SPI	2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		20	260	.00027 Amp	5.28 mm
MB85RS4MTPF-G-JNERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.6 mA	524288 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	2.1 mm	10000000000000 Write/Erase Cycles	40 MHz	5.24 mm		SPI	4194304 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00005 Amp	5.3 mm
FM25L16B-DG	Infineon Technologies	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,37		10	.95 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000000000000 Write/Erase Cycles	20 MHz	4 mm		SPI	16384 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		30	260	.000006 Amp	4.5 mm
MB85RC16PN-G-AMERE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.1 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		3.6 V	.8 mm	1000000000000 Write/Erase Cycles	1 MHz	2 mm		I2C	16384 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000001 Amp	3 mm
FM21L16-60-TG	Cypress Semiconductor	FRAM	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	10	.8 mm	85 Cel	128KX16	128K	2.7 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles		10.16 mm	Not Qualified		2097152 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE;2.5KV ESD AVAILABLE;ALSO CONFIGURABLE AS 256KX8	e4	30	260	.00027 Amp	18.41 mm	110 ns
MB85RC64PNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.15 mA	8192 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	I2C	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00002 Amp	5.05 mm
CY15V108QI-20LPXI	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1.75 mA	1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.2,25		10	.65 mm	85 Cel	1MX8	1M	1.71 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	1.89 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.71 V	2kv ESD available	e4		260	.00011 Amp	3.28 mm
CY15V108QI-20LPXIT	Infineon Technologies	FRAM	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1.75 mA	1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.2,25		10	.65 mm	85 Cel	1MX8	1M	1.71 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	1.89 V	.55 mm	1000000000000000 Write/Erase Cycles	20 MHz	3.23 mm		SPI	8388608 bit	1.71 V	2kv ESD available	e4		260	.00011 Amp	3.28 mm
FM24C04A-G	Ramtron International	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	45	1.27 mm	85 Cel	512X8	512	4.5 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	I2C	4096 bit	4.5 V				260	.00001 Amp	4.9 mm
FM24C04A-GTR	Ramtron International	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	5		8	SMALL OUTLINE	SOP8,.25		45	1.27 mm	85 Cel	512X8	512	4.5 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	I2C	4096 bit	4.5 V					.00001 Amp	4.9 mm
MB85RC16PNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.1 mA	2048 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	16384 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000001 Amp	5.05 mm
MB85RC1MTPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.2 mA	131072 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	128KX8	128K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	3.4 MHz	3.9 mm		I2C	1048576 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000012 Amp	5.05 mm
FM25040B-GTR	Infineon Technologies	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	512 words	5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	512X8	512	4.5 V	-40 Cel	PURE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	100000000000000 Write/Erase Cycles	20 MHz	3.8985 mm	Not Qualified	SPI	4096 bit	4.5 V	2kv ESD available		30	260	.00001 Amp	4.889 mm
FM25640B-GATR	Cypress Semiconductor	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1.2 mA	8192 words	5		8	SMALL OUTLINE	SOP8,.25		11	1.27 mm	125 Cel	8KX8	8K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.727 mm	10000000000000 Write/Erase Cycles	4 MHz	3.8985 mm	Not Qualified	SPI	65536 bit	4.5 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE; 4KV ESD AVAILABLE	e4			.00003 Amp	4.889 mm

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.