Texas Instruments - TIL81

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .125 W; Maximum Response Time: .000015 s; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Nominal Light Current: 1 mA; Maximum Operating Temperature: 100 Cel; Shape: ROUND; Maximum Dark Current: 200 nA; Additional Features: DAYLIGHT FILTER, HIGH RELIABILITY;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .125 W; Minimum Operating Temperature: -55 Cel; Maximum Response Time: .000015 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; JESD-609 Code: e3; Size: 5 mm;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Response Time: .000006 s; Minimum Operating Temperature: -55 Cel;

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; JESD-609 Code: e3; Nominal Light Current: .63 mA; Minimum Operating Temperature: -40 Cel;

KDT00030ATR by Onsemi is a phototransistor with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with max dark current of 40nA. Ideal for surface mount applications in optoelectronics.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .07 mA; No. of Functions: 1; Shape: ROUND; Maximum Power Dissipation: .075 W;

PHOTO TRANSISTOR; Shape: ROUND; No. of Functions: 1; Infrared (IR) Range: YES; Configuration: SINGLE; Size: 3.1 mm;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Peak Wavelength (nm): 900; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Terminal Finish: PURE TIN OVER NICKEL; Maximum Dark Current: 50 nA; Infrared (IR) Range: YES; Size: 2.4 mm; Minimum Collector-emitter Breakdown Voltage: 35 V;

PHOTO TRANSISTOR; Minimum Operating Temperature: -25 Cel; Additional Features: SIDE VIEW; Size: 1.5 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 930; Configuration: SINGLE; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .165 W; Maximum Dark Current: 200 nA; Configuration: SINGLE; Maximum On State Current: .015 A;

PHOTO TRANSISTOR; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .017 mA; Shape: ROUND; Peak Wavelength (nm): 900; Maximum Operating Temperature: 85 Cel;

Vishay Intertechnology's VEMT2523SLX01 is an 850nm peak wavelength phototransistor with a max operating temperature of 100°C. With a nominal light current of 2.7mA and min collector-emitter breakdown voltage of 20V, it is ideal for applications requiring precise light detection in environments ranging from -40°C to 100°C.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; JESD-609 Code: e0; Maximum Operating Temperature: 85 Cel;

QSB363.ZR by Qt Optoelectronics is a 1.9mm ROUND PHOTO TRANSISTOR with max operating temp of 85°C and min of -40°C. It has 0.7mA light current, 100nA dark current, and 30V breakdown voltage. Ideal for applications requiring precise light sensing in compact spaces.